Back to results
US 11,447,862 B2Granted
Methods to deposit controlled thin layers of transition metal dichalcogenides
AssigneesUchicago Argonne, LLC, Boise State University
InventorsAnil U. Mane, Jeffrey W. Elam, Steven Letourneau, Elton Graugnard
Life of this patent
Estimating the term…
Abstract
Transition metal dichalcogenides (TMDs) are deposited as thin layers on a substrate. The TMDs may be grown on oxide substrates and may have a tunable TMD-oxide interface.
Claims10
A method of preparing a substrate comprising:
- performing an a atomic layer deposition cycle exposure for a transition metal precursor at a first deposition temperature between 50° C. and 300° C. above a sublimation temperature of the transition metal precursor;
- performing a b atomic layer deposition cycle exposure for a sulfur precursor at a second deposition temperature between 50° C. and 300° C. above a sublimation temperature of the sulfur precursor;
- performing z supercycles of the a atomic layer deposition cycle and of the b atomic layer deposition cycle;
- and
- forming a transition metal dichalcogenide coating;
- wherein the transition metal precursor comprises MoF6 and the sulfur precursor is H2S with the transition metal dichalcogenide being MoS2 or wherein the transition metal precursor is tetrakis(dimethylamido) hafnium or HfCl4 and the sulfur precursor is H2S, with the transition metal dichalcogenide being HfS2.
3 more elements
A method of forming a transition metal oxide and transition metal dichalcogenide stack comprising:
- exposing a first transition metal precursor at a first deposition temperature between 50° C. and 400° C.;
- exposing an oxidizing precursor at a second deposition temperature between 50° C. and 400° C.;
- depositing a layer of transition metal oxide;
- exposing a second transition metal precursor at a third deposition temperature between 50° C. and 400° C.;
- exposing a sulfur precursor at a fourth deposition temperature between 50° C. and 400° C.;
- and
- depositing a transition metal dichalcogenide on the transition metal oxide;
- wherein the second transition metal precursor is tetrakis(dimethylamido) hafnium or HfCl4 and the sulfur precursor is H2S, with the transition metal dichalcogenide being HfS2.
5 more elements
Dependencies are inferred from the claim text.