Sequential infiltration synthesis apparatus and a method of forming a patterned structure

A sequential infiltration synthesis apparatus comprising:

• a reaction chamber constructed and arranged to hold a substrate;
• a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor, wherein the precursor distribution and removal system comprises:
• a precursor feed flow duct that is partially common to both a first precursor feed flow path and a second precursor feed flow path,
• a first container, coupled to the first precursor feed flow path, containing a source of a first precursor selected from the group consisting of trimethyl aluminum (TMA), triethyl aluminum (TEA), and dimethylaluminumhydride (DMAH) dimethylethylaminealane (DMEAA), trimethylaminealane (TEAA), N-methylpyrroridinealane (MPA), tri-isobutylaluminum (TIBA), tritertbutylaluminum (TTBA) trimethylboron, triethylboron titanium(IV)chloride (TiCl4), tantalum(V)chloride (TaCl5), zirconium(IV)chloride (ZrCl4), hafnium(IV)chloride (HfCl4), and niobium chloride (NbCl5),
• a second container, coupled to the second precursor feed flow path, containing a source of a second precursor selected from the group consisting of an oxidant selected from the group consisting of water, ozone, hydrogen peroxide, and a nitridizer selected from the group consisting of ammonia and hydrazine,
• a distribution reaction chamber valve disposed between the precursor feed flow duct and the reaction chamber and configured to provide controllable access to the reaction chamber,
• a purge reaction chamber valve disposed between the reaction chamber and a source of purge gas, and
• a gas removal pump,
• a heating system and,
• a sequence controller configured to control the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller, wherein the sequence controller is configured to execute the program to perform the infiltration of the infiltrateable material including to:
• activate the precursor distribution and removal system to open the distribution reaction chamber valve to provide and maintain the first precursor for a first period T1 in the reaction chamber;
• activate the precursor distribution and removal system to close the distribution reaction chamber valve and open the purge reaction chamber valve to remove a portion of the first precursor from the reaction chamber for a second period T2;
• activate the precursor distribution and removal system to load the precursor feed flow duct with the second precursor during the second period T2 while the distribution chamber valve is closed;
• and
• activate the precursor distribution and removal system to open the distribution reaction chamber valve to provide and maintain the second precursor for a third period T3 in the reaction chamber, wherein a pressure of the second precursor builds up during a load period of the third period T3 by closing a removal reaction chamber valve while providing the second precursor to the reaction chamber, wherein the second precursor infiltrates the infiltrateable material and reacts with infiltrated first precursor derivative in the infiltrateable material on the substrate during the third period T3,
• wherein the program in the memory is programmed with the first period T1 longer than the second period T2,
• wherein a temperature within the reaction chamber during the process of infiltration of the infiltrateable material is controlled to a temperature between 50° C. and 150° C. using the heating system, and
• wherein the second period T2 has a duration long enough to remove the first precursor to a predefined depth of the infiltrateable material.