Methods and apparatus for reducing tungsten resistivity

A non-transitory, computer readable medium having instructions stored thereon that, when executed, cause a method for reducing resistivity of tungsten to be performed, the method comprising:

• generating a plasma in a pressure of approximately 1 mTorr to approximately 15 mTorr in a processing volume of a physical vapor deposition (PVD) chamber with a process gas of krypton and using RF power at a frequency of approximately 40 MHz to approximately 75 MHz and a magnetron, wherein the RF power is approximately 6 kilowatts to 10 kilowatts;
• applying bias power to a substrate;
• applying a current to an electromagnet surrounding the processing volume at a level proximate to the substrate;
• and
• sputtering a tungsten target to deposit a tungsten thin film on the substrate, wherein the tungsten thin film has a resistivity value of approximately 9.5 pohm-cm or less at a 200 angstrom thickness.