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US 11,447,854 B2Granted
Process for film deposition on a substrate with non-uniform overlapping subpulses of a precursor
AssigneeASM IP Holding B.V.
InventorChiyu Zhu
Life of this patent
Estimating the term…
Abstract
A process for the uniform controlled growth of materials on a substrate that directs a plurality of pulsed flows of a precursor into a reaction space of a reactor to deposit the thin film on the substrate. Each pulsed flow is a combination of a first pulsed subflow and a second pulsed subflow of the same precursor, wherein a pulse profile of the second pulsed subflow overlaps at least a portion of a latter half of a pulse profile of the first pulsed subflow having a non-uniform pulse profile.
Claims13
A method of depositing a thin film on a substrate comprising:
- directing a plurality of pulsed flows of a precursor into a reaction space of a reactor to deposit the thin film on the substrate, each pulsed flow comprising a combination of a first pulsed subflow and a second pulsed subflow of the same precursor,
- wherein a pulse profile of the second pulsed subflow overlaps at least a portion of a latter half of a pulse profile of the first pulsed subflow to form a combined pulsed flow having a non-uniform pulse profile.
Dependencies are inferred from the claim text.