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US 11,447,642 B2Granted
Methods of using surface treatment compositions
AssigneeFujifilm Electronic Materials U.S.A., Inc.
InventorsWilliam A. Wojtczak, Atsushi Mizutani, Keeyoung Park
Life of this patent
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Abstract
This disclosure relates to methods and compositions for treating a wafer having a pattern disposed on a surface of the wafer.
Claims19
A method for treating a semiconductor substrate having a pattern disposed on a surface of the wafer, comprising:
- contacting the surface with a surface treatment composition to form a surface treatment layer such that the surface treatment layer has a water contact angle of at least about 50 degrees, the surface treatment composition comprising at least one siloxane compound and at least one additive comprising an acid having a pKa of at most 0 or an anhydride thereof;
- wherein the pattern comprises a feature having a dimension of at most about 20 nm.
Dependencies are inferred from the claim text.