Garnet compound, oxide sintered compact, oxide semiconductor thin film, thin film transistor, electronic device and image sensor
AssigneeIdemitsu Kosan Co., Ltd.
InventorsKazuyoshi Inoue, Masatoshi Shibata, Emi Kawashima, Yuki Tsuruma, Shigekazu Tomai
Life of this patent
Estimating the term…
Abstract
A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below, 0.80≤In/(In+Y+Ga)≤0.96 (1), 0.02≤Y/(In+Y+Ga)≤0.10 (2), and 0.02≤Ga/(In+Y+Ga)≤0.10 (3), and Al element at an atomic ratio as defined in a formula (4) below, 0.005≤Al/(In+Y+Ga+Al)≤0.07 (4), where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.
Claims12
A sintered oxide comprising main constitutional elements comprising In element, Y element, Ga element, Al element, and O element, wherein the sintered oxide comprises a Bixbyite crystalline phase represented by In2O3 and a Y3Ga5O12 crystalline phase and a Y3Ga4AlO12 crystalline phase.
A sintered oxide comprising main constitutional elements comprising In element, Y element, Ga element, Al element, positive tetravalent metal element, and O element, wherein the sintered oxide comprises a Bixbyite crystalline phase represented by In2O3 and a Y3Ga4AlO12 crystalline phase.
Dependencies are inferred from the claim text.