# US 11,447,393 B2 · Graphene and method for preparing same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,447,393 B2 - Document ID: US11447393B2 - Status: Granted - Kind: B2 - Application number: 16/747,873 - Filed: 2020-01-21 - Published: 2020-05-21 - Granted: 2022-09-20 - Earliest claimed: 2017-07-21 - Assignees: Research & Business Foundation Sungkyunkwan University - Applicants: Research & Business Foundation Sungkyunkwan University - Inventors: Young Jae Song; Bong Gyu Shin; Sang Woo Park; Dae Hwan Boo - Web page: https://patentgrep.com/patent/US11447393B2 ## CPC - C01B 32/188: by epitaxial growth - C30B 29/06: Silicon - C30B 29/36: Carbides - C30B 29/68: Crystals with laminate structure, e.g. "superlattices" - C30B 33/02: Heat treatment (C30B33/04, C30B33/06 take precedence) - C01B 2204/02: Single layer graphene - C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C} - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR ## Abstract The present disclosure relates to a method for preparing graphene, including: forming a dielectric material; and applying heat treatment concurrently with a gaseous carbon source on the dielectric material to grow. ## Claims ### Claim 1 A method for preparing graphene, comprising: forming a dielectric material having crystallinity, wherein the dielectric material includes silicon nitrogen oxide or surface hexagonal lattice silica; and applying heat treatment concurrently with a gaseous carbon source on the dielectric material to grow graphene. ### Claim 2 (depends on 1) The method for preparing graphene of claim 1, wherein the graphene is grown by direct growth based on the crystallinity on the dielectric material. ### Claim 3 (depends on 1) The method for preparing graphene of claim 1, wherein the dielectric material having crystallinity is formed on a substrate. ### Claim 4 (depends on 3) The method for preparing graphene of claim 3, wherein the substrate contains a material selected from the group consisting of silicon carbide, silicon, germanium, silicon germanium, InAs, AlAs, GaAs, InP, GaN, InGaAs, InAlAs, GaSb, AlSb, AIP, GaP and combinations thereof. ### Claim 5 (depends on 3) The method for preparing graphene of claim 3, wherein the process of forming the dielectric material having crystallinity is performed by exposing the substrate to a gas selected from the group consisting of hydrogen, nitrogen, oxygen, air, silicon and combinations thereof. ### Claim 6 (depends on 3) The method for preparing graphene of claim 3, wherein the process of forming the dielectric material having crystallinity is performed under a pressure of 10−9 Torr to 1,000 Torr. ### Claim 7 (depends on 3) The method for preparing graphene of claim 3, wherein the process of forming the dielectric material having crystallinity is performed at a temperature of 300° C. to 1,700° C. ### Claim 8 (depends on 3) The method for preparing graphene of claim 3, further comprising: supplying hydrogen to the substrate before the process of forming the dielectric material on the substrate. ### Claim 9 (depends on 1) The method for preparing graphene of claim 1, wherein the silicon nitrogen oxide includes SiON or Si2N2O. ### Claim 10 (depends on 1) The method for preparing graphene of claim 1, wherein the surface hexagonal lattice silica includes Si2O5 or SiO2. ### Claim 11 (depends on 1) The method for preparing graphene of claim 1, wherein the gaseous carbon source includes a carbon-containing compound having 1 to 7 carbon atoms. ### Claim 12 (depends on 11) The method for preparing graphene of claim 11, wherein the gaseous carbon source includes a material selected from the group consisting of methane, ethane, ethylene, carbon monoxide, ethanol, acetylene, propane, propylene, butane, butadiene, pentane, pentene, cyclopentadiene, hexane, cyclohexane, benzene, toluene and combinations thereof. ### Claim 13 (depends on 1) The method for preparing graphene of claim 1, wherein the heat treatment is applied at a temperature of 300° C. to 1,700° C. ### Claim 14 (depends on 1) The method for preparing graphene of claim 1, further comprising: cooling a product of the heat treatment. ### Claim 15 (depends on 1) The method for preparing graphene of claim 1, wherein the graphene forms a graphene sheet. ### Claim 16 (depends on 15) The method for preparing graphene of claim 15, wherein the graphene sheet is monocrystalline. ### Claim 17 (depends on 1) The method for preparing graphene of claim 1, further comprising: a heat source for the heat treatment including Joule heating, induction heating, radiation heat, laser, infrared radiation, microwaves, plasma, ultraviolet radiation, surface Plasmon heating, and combinations thereof. ### Claim 18 (depends on 1) The method for preparing graphene of claim 1, wherein the constant speed is 0.1° C. per minute to 10° C. per minute.