# US 11,445,135 B2 · Solid-state imaging device and method of controlling solid-state imaging device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,445,135 B2 - Document ID: US11445135B2 - Status: Granted - Kind: B2 - Application number: 16/640,479 - Filed: 2018-08-10 - Published: 2020-07-09 - Granted: 2022-09-13 - Earliest claimed: 2017-08-31 - Assignees: Sony Semiconductor Solutions Corporation - Applicants: Sony Semiconductor Solutions Corporation - Inventors: Taiichiro Watanabe; Tetsuji Yamaguchi; Yusuke Sato; Fumihiko Koga - Web page: https://patentgrep.com/patent/US11445135B2 ## CPC - H04N 25/626: Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - H04N 25/17: Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location - H04N 25/778: comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself - H10F 39/12: Image sensors - H10K 39/32: Organic image sensors - Y02E 10/549: Organic PV cells - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract A solid-state imaging device according to an embodiment of the disclosure includes a first electrode, a second electrode, a photoelectric conversion layer, and a voltage applier. The first electrode includes a plurality of electrodes independent from each other. The second electrode is disposed opposite to the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The voltage applier applies different voltages to at least one of the first electrode or the second electrode during a charge accumulation period and a charge non-accumulation period. ## Claims ### Claim 1 A solid-state imaging device, comprising: a first electrode including a plurality of electrodes, wherein the plurality of electrodes includes a charge readout electrode, an accumulation electrode, and a discharge electrode; a second electrode opposite to the first electrode; a photoelectric conversion layer between the first electrode and the second electrode; and a voltage applier configured to apply, to at least one of the first electrode or the second electrode, a first voltage during a charge accumulation period and a second voltage during a charge non-accumulation period, wherein the first voltage is different from the second voltage. ### Claim 2 (depends on 1) The solid-state imaging device according to claim 1, wherein the first electrode further includes a first barrier adjustment electrode between the discharge electrode and the accumulation electrode, and the first barrier adjustment electrode is configured to adjust a voltage across the discharge electrode and the accumulation electrode. ### Claim 3 (depends on 1) The solid-state imaging device according to claim 1, wherein the first electrode further includes a second barrier adjustment electrode on a side of the discharge electrode opposite to the accumulation electrode, and the second barrier adjustment electrode is configured to adjust a voltage across the discharge electrode and the accumulation electrode. ### Claim 4 (depends on 1) The solid-state imaging device according to claim 1, wherein a voltage across the discharge electrode and the accumulation electrode is larger during the charge non-accumulation period than during the charge accumulation period. ### Claim 5 (depends on 1) The solid-state imaging device according to claim 1, wherein a potential difference between the accumulation electrode and the second electrode is larger during the charge non-accumulation period than during the charge accumulation period. ### Claim 6 (depends on 1) The solid-state imaging device according to claim 1, wherein the charge readout electrode also serves as the discharge electrode. ### Claim 7 (depends on 1) The solid-state imaging device according to claim 1, wherein the accumulation electrode includes a plurality of segments, a first segment of the plurality of segments is configured to receive a third voltage, and a second segment of the plurality of segments is configured to receive a fourth voltage different from the third voltage. ### Claim 8 (depends on 1) The solid-state imaging device according to claim 1, further comprising an insulating layer between the first electrode and the photoelectric conversion layer, wherein the charge readout electrode and the discharge electrode are electrically coupled with the photoelectric conversion layer via an opening in the insulating layer. ### Claim 9 (depends on 8) The solid-state imaging device according to claim 8, further comprising a semiconductor layer between the photoelectric conversion layer and the insulating layer, wherein the charge readout electrode is electrically coupled with the photoelectric conversion layer via the semiconductor layer. ### Claim 10 (depends on 1) The solid-state imaging device according to claim 1, wherein each of the plurality of electrodes is configured to receive a separate voltage. ### Claim 11 (depends on 1) The solid-state imaging device according to claim 1, further comprising: an inorganic photoelectric transducer; and an organic photoelectric transducer on the inorganic photoelectric transducer, wherein the organic photoelectric transducer includes the photoelectric conversion layer, and the inorganic photoelectric transducer is configured to perform photoelectric conversion in a different wavelength band from the organic photoelectric transducer. ### Claim 12 (depends on 11) The solid-state imaging device according to claim 11, further comprising a semiconductor substrate, wherein the inorganic photoelectric transducer is in the semiconductor substrate, and the organic photoelectric transducer is on a first surface side of the semiconductor substrate. ### Claim 13 (depends on 12) The solid-state imaging device according to claim 12, wherein a multilayer wiring layer is on a second surface side of the semiconductor substrate. ### Claim 14 A method of controlling a solid-state imaging device, the method comprising: applying, to at least one of a first electrode of the solid-state imaging device or a second electrode of the solid-state imaging device, a first voltage during a charge accumulation period and a second voltage during a charge non-accumulation period, wherein the first voltage is different from the second voltage, the first electrode includes a plurality of electrodes, the plurality of electrodes includes a charge readout electrode, an accumulation electrode, and a discharge electrode, the second electrode is opposite to the first electrode, and a photoelectric conversion layer is between the first electrode and the second electrode. ### Claim 15 (depends on 14) The method of controlling the solid-state imaging device according to claim 14, wherein the first electrode further includes a first barrier adjustment electrode between the discharge electrode and the accumulation electrode, and a voltage is applied to the first barrier adjustment electrode during the charge non-accumulation period to cause a voltage across the discharge electrode and the accumulation electrode to be larger during the charge non-accumulation period than during the charge accumulation period. ### Claim 16 (depends on 15) The method of controlling the solid-state imaging device according to claim 15, wherein a first reset voltage applied at a first shutter timing after the charge accumulation period is larger than a second reset voltage applied at a second shutter timing before the charge accumulation period. ### Claim 17 (depends on 15) The method of controlling the solid-state imaging device according to claim 15, wherein the second voltage is applied to the second electrode during the charge non-accumulation period, and a potential difference between the accumulation electrode and the second electrode is larger during the charge non-accumulation period than during the charge accumulation period. ### Claim 18 (depends on 15) The method of controlling the solid-state imaging device according to claim 15, wherein charges accumulated on the accumulation electrode are discharged from the discharge electrode in several batches during the charge non-accumulation period. ### Claim 19 (depends on 14) The method of controlling the solid-state imaging device according to claim 14, wherein a gate of a reset transistor of the solid-state imaging device is always turned on during the charge non-accumulation period. ### Claim 20 A solid-state imaging device, comprising: a first electrode including a plurality of electrodes; a second electrode opposite to the first electrode; a photoelectric conversion layer between the first electrode and the second electrode; a voltage applier configured to apply, to at least one of the first electrode or the second electrode, a first voltage during a charge accumulation period and a second voltage during a charge non-accumulation period, wherein the first voltage is different from the second voltage; a semiconductor substrate; an inorganic photoelectric transducer in the semiconductor substrate; and an organic photoelectric transducer on the inorganic photoelectric transducer and a surface side of the semiconductor substrate, wherein the organic photoelectric transducer includes the photoelectric conversion layer, and the inorganic photoelectric transducer is configured to perform photoelectric conversion in a different wavelength band from the organic photoelectric transducer.