# US 11,444,616 B2 · Adaptive switch speed control of power semiconductors > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,444,616 B2 - Document ID: US11444616B2 - Status: Granted - Kind: B2 - Application number: 17/609,245 - Filed: 2020-03-24 - Published: 2022-06-30 - Granted: 2022-09-13 - Earliest claimed: 2019-05-07 - Assignees: Siemens Aktiengesellschaft - Applicants: Siemens Aktiengesellschaft - Inventors: Bastian Krümmer; Andreas Kunert; Norbert Stadter - Web page: https://patentgrep.com/patent/US11444616B2 ## CPC - H03K 17/16: Modifications for eliminating interference voltages or currents - H03K 17/168: {in composite switches} - H03K 17/04: Modifications for accelerating switching - H03K 17/166: {Soft switching} - H03K 2217/0027: Measuring means of, e.g. currents through or voltages across the switch - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) ## Abstract A semiconductor switch device includes a switchable power semiconductor and a control circuit. The semiconductor switch device has a current sink and a current amplifier designed to amplify during a switching process a partial current of the total current flowing across the control capacitor that is not discharged by the current sink up to an adjustable maximum current and to apply the amplified partial current to the control electrode of the power semiconductor so as to counteract the change in the voltage across the collector-emitter path or the drain-source path of the power semiconductor during the switching process. An additional circuit provides an adapted switch-on transition by smoothing the collector voltage and/or the drain voltage of the switchable power semiconductor when switching over the collector-emitter path or the drain-source path of the power semiconductor from a blocked state into a conductive state. ## Claims ### Claim 1 A semiconductor switch device, comprising: a power semiconductor having a collector or a drain, an emitter or a source, and a control electrode embodied as a gate or a gate electrode, and configured to be switchable along a collector-emitter path or a drain-source path via the control electrode, at least one control circuit comprising a current sink capacitively coupled to the collector via a regulating capacitor configured to divert, up to an adjustable maximum current, a partial current of a total current flowing via the regulating capacitor during a switching process, wherein the adjustable maximum current is adjustable via an adjustable current source, and a current amplifier having an input side connected to an end of the current sink that is capacitively coupled to the regulating capacitor and to a positive or a negative supply voltage, and an output side connected to the control electrode of the power semiconductor, with the current amplifier configured to amplify by a predetermined amplification factor the partial current flowing via the regulating capacitor and not being diverted by the current sink during the switching process and to apply the amplified partial current to the control electrode so as to counteract a change in a voltage across the collector-emitter path or across the drain-source path during the switching process, and the semiconductor switch device further comprising an additional circuit connected to the control electrode and configured to provide a smooth switch-on transition of a collector voltage or a drain voltage, or both, when switching over the collector-emitter path or drain-source path from a blocked state to a conductive state. ### Claim 2 (depends on 1) The semiconductor switch device of claim 1, wherein a first control circuit of the at least one control circuit comprises a first current amplifier connected to a negative supply voltage and configured to supply a negative current to the control electrode, and a second control circuit of the at least one control circuit comprises a second current amplifier connected to a positive supply voltage and configured to supply a positive current to the control electrode. ### Claim 3 (depends on 1) The semiconductor switch device of claim 1, wherein the current sink comprises a metal oxide semiconductor field effect transistor (MOSFET) connected in a current feedback arrangement, a current feedback resistor and the adjustable voltage source, wherein a drain electrode of the MOSFET is connected to the regulating capacitor and a source electrode of the MOSFET is connected via the current feedback resistor to ground and a gate electrode of the MOSFET is supplied by the adjustable voltage source with a voltage referenced against ground. ### Claim 4 (depends on 1) The semiconductor switch device of claim 1, wherein the current amplifier comprises a follower semiconductor connected as a source/emitter follower, a gate resistor, a source resistor and a diode, wherein the diode is disposed between the regulating capacitor and a control electrode of the follower semiconductor in a forward-conducting direction toward the control electrode, wherein the gate resistor is disposed between the control electrode of the follower semiconductor and the control electrode of the power semiconductor, and wherein the source resistor is disposed between a source electrode of the follower semiconductor and the control electrode of the power semiconductor. ### Claim 5 (depends on 4) The semiconductor switch device of claim 4, wherein the follower semiconductor is configured as a MOSFET connected as a source-follower. ### Claim 6 (depends on 4) The semiconductor switch device of claim 4, wherein the follower semiconductor is configured as a bipolar transistor connected as an emitter follower. ### Claim 7 (depends on 1) The semiconductor switch device of claim 1, wherein the power semiconductor is configured as an insulated-gate bipolar transistor (IGBT), as a metal oxide semiconductor field-effect transistor (MOSFET), as a silicon carbide metal oxide semiconductor field-effect transistor (SiC MOSFET) or as a bipolar transistor. ### Claim 8 (depends on 1) A frequency converter comprising a semiconductor switch device according to claim 1, wherein the power semiconductor is constructed as an insulated-gate bipolar transistor (IGBT).