# US 11,444,613 B1 · Actively tracking switching speed control and regulating switching speed of a power transistor during turn-on > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,444,613 B1 - Document ID: US11444613B1 - Status: Granted - Kind: B1 - Application number: 17/372,913 - Filed: 2021-07-12 - Granted: 2022-09-13 - Earliest claimed: 2021-06-07 - Assignees: Infineon Technologies AG - Applicants: Infineon Technologies AG - Inventors: Zheming Li; Mark-Matthias Bakran; Daniel Domes; Robert Maier; Franz-Josef Niedernostheide - Web page: https://patentgrep.com/patent/US11444613B1 ## CPC - H03K 17/0406: {in composite switches} - H03K 17/165: {by feedback from the output circuit to the control circuit} - H03K 17/042: by feedback from the output circuit to the control circuit {(H03K17/0403, H03K17/0406 take precedence)} - H03K 17/04206: {in field-effect transistor switches} - H03K 2217/0027: Measuring means of, e.g. currents through or voltages across the switch - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) ## Abstract A gate driver system includes a gate driver circuit coupled to a gate terminal of a transistor and configured to generate an on-current during a plurality of turn-on switching events to turn on the transistor, wherein the gate driver circuit includes a first driver configured to source a first portion of the on-current to the gate terminal to charge a first portion of the gate voltage and a second driver configured to, during a first boost interval, source a second portion of the on-current to the gate terminal to charge a second portion of the gate voltage; a measurement circuit configured to measure a transistor parameter indicative of an oscillation of a load current for a turn-on switching event; and a controller configured to receive the measured transistor parameter and regulate a length of the first boost interval based on the measured transistor parameter. ## Claims ### Claim 1 A gate driver system configured to drive a transistor between switching states in a power circuit, the gate driver system comprising: a gate driver circuit coupled to a gate terminal of the transistor and configured to control a gate voltage at the gate terminal in order to drive the transistor between the switching states, the gate driver circuit configured to generate an on-current during a plurality of turn-on switching events to turn on the transistor, wherein the gate driver circuit includes a first driver configured to source a first portion of the on-current to the gate terminal to charge a first portion of the gate voltage, wherein the gate driver circuit includes a second driver configured to, during a first boost interval, source a second portion of the on-current to the gate terminal to charge a second portion of the gate voltage; and a control circuit configured to measure a transistor parameter indicative of an oscillation of a load current for a first turn-on switching event during which the transistor is transitioned to an on state, wherein the control circuit is configured to control the first driver to source the first portion of the on-current and to control the second driver to source the second portion of the on-current, wherein the control circuit is further configured to regulate a length of the first boost interval based on the measured transistor parameter. ### Claim 2 (depends on 1) The gate driver system of claim 1, wherein the control circuit is configured to monitor the measured transistor parameter over an oscillation monitoring period of the first turn-on switching event and regulate the length of the first boost interval for a subsequent turn-on switching event based on the monitoring of the measured transistor parameter over the oscillation monitoring period. ### Claim 3 (depends on 2) The gate driver system of claim 2, wherein the oscillation monitoring period is a predefined portion of the first turn-on switching event and the control circuit is configured to update the length of the first boost interval for the subsequent turn-on switching event during an interval between the oscillation monitoring period and the subsequent turn-on switching event. ### Claim 4 (depends on 1) The gate driver system of claim 1, wherein the second driver is configured to activate a flow of the second portion of the on-current at a start of the first boost interval for the length of the first boost interval and deactivate the flow of the second portion of the on-current at an end of the first boost interval to stop the flow of the second portion of the on-current. ### Claim 5 (depends on 1) The gate driver system of claim 1, wherein the transistor parameter is a time derivative of a load current of the transistor or a load path parameter of the transistor that is proportional to the time derivative of the load current of the transistor. ### Claim 6 (depends on 5) The gate driver system of claim 5, wherein the control circuit is configured to compare the transistor parameter to a negative threshold value to generate a comparison result, and regulate the length of the first boost interval based on the comparison result. ### Claim 7 (depends on 6) The gate driver system of claim 6, wherein: during the first turn-on switching event, the control circuit is configured to compare the transistor parameter to the negative threshold value to generate the comparison result, and the control circuit is configured to regulate the length of the first boost interval for a subsequent turn-on switching event based on the comparison result. ### Claim 8 (depends on 6) The gate driver system of claim 6, wherein: the control circuit is configured to initiate a comparison of the transistor parameter to the negative threshold value at a start of an oscillation monitoring period of the first turn-on switching event, and monitor the comparison during the oscillation monitoring period of the first turn-on switching event, the comparison result indicating whether or not the transistor parameter became less than the negative threshold value at any point during the oscillation monitoring period of the first turn-on switching event. ### Claim 9 (depends on 6) The gate driver system of claim 6, wherein: the comparison result indicates whether or not the transistor parameter became less than the negative threshold value during an oscillation monitoring period of the first turn-on switching event, on a first condition that the transistor parameter became less than the negative threshold value during the oscillation monitoring period of the first turn-on switching event, the control circuit is configured to decrease the length of the first boost interval for a subsequent turn-on switching event, and on a second condition that the transistor parameter did not become less than the negative threshold value during the oscillation monitoring period of the first turn-on switching event, the control circuit is configured to increase the length of the first boost interval for the subsequent turn-on switching event. ### Claim 10 (depends on 5) The gate driver system of claim 5, wherein the control circuit comprises: a comparator configured to measure a voltage difference across a stray inductance that is coupled in series to the transistor and through which the load current flows, the voltage difference being the load path parameter of the transistor that is proportional to the time derivative of the load current of the transistor, and a processing circuit configured to convert the measured voltage difference to the time derivative of the load current. ### Claim 11 (depends on 1) The gate driver system of claim 1, wherein the second portion of the on-current is a boost on current that supplements the first portion of the on-current. ### Claim 12 (depends on 1) The gate driver system of claim 1, wherein the first boost interval occurs during a portion of a transient interval of the gate voltage caused by the transistor transitioning from an off state to the on state. ### Claim 13 (depends on 1) The gate driver system of claim 1, wherein: the second driver is configured to, during a second boost interval, source a third portion of the on-current to the gate terminal to charge a third portion of the gate voltage, and the control circuit is configured to control the second driver to source the third portion of the on-current, wherein the control circuit is further configured regulate a trigger time of the second boost interval based on the measured transistor parameter, wherein the trigger time of the second boost interval is a time at which the second driver initiates sourcing of the third portion of the on-current to the gate terminal. ### Claim 14 (depends on 13) The gate driver system of claim 13, wherein a length of the second boost interval is fixed and the length of the first boost interval is variable over the plurality of turn-on switching events. ### Claim 15 (depends on 13) The gate driver system of claim 13, wherein a trigger time of the first boost interval is fixed and the trigger time of the second boost interval is variable over the plurality of turn-on switching events. ### Claim 16 (depends on 13) The gate driver system of claim 13, wherein the third portion of the on-current is a boost on current that supplements the first portion of the on-current.