Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components, the power amplifier electronics being configured to control application of RF energy in cycles between high and low powers, the power amplifier electronics comprising:
- a semiconductor die on which one or more RF power transistors are fabricated;
- an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab;
- and
- bonding wires bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network;
- wherein the bonding wires comprise copper bonding wires having a diameter of between about 10 microns and about 100 microns.