# US 11,444,431 B2 · Surface emitting laser

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- Number: US 11,444,431 B2
- Document ID: US11444431B2
- Status: Granted
- Kind: B2
- Application number: 16/877,991
- Filed: 2020-05-19
- Published: 2020-12-31
- Granted: 2022-09-13
- Earliest claimed: 2019-06-28
- Assignees: Sumitomo Electric Industries, Ltd.
- Applicants: Sumitomo Electric Industries, Ltd.
- Inventors: Daisuke Inoue
- Web page: https://patentgrep.com/patent/US11444431B2

## CPC

- H01S 5/04256: {characterised by the configuration}
- H01S 5/04254: {characterised by the shape}
- H01S 5/18313: {by oxidizing at least one of the DBR layers}
- H01S 5/18347: {Mesa comprising active layer}
- H01S 5/34313: {with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs}
- H01S 5/04252: {characterised by the material}
- H01S 5/06226: {Modulation at ultra-high frequencies}
- H01S 5/18352: {Mesa with inclined sidewall}
- H01S 5/18372: {by native oxidation}
- H01S 5/2063: {obtained by particle bombardment}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

A surface emitting laser includes a substrate, a lower contact layer disposed on the substrate, a semiconductor layer mesa including a lower reflector layer, an active layer, an upper reflector layer, and an upper contact layer which are laminated, in the order named, on the lower contact layer, an annular electrode disposed on the upper contact layer, and a light transmitting window situated inside the annular electrode to transmit laser light, wherein the upper reflector layer includes a first region and a second region, the first region being inclusive of an area situated directly below the electrode and the light transmitting window, the second region being inclusive of an area outside the mesa and inclusive of a surrounding area of the first region within the mesa, and wherein a proton concentration in the first region is lower than a proton concentration in the second region.

## Claims

### Claim 1

A surface emitting laser, comprising:
a substrate;
a lower contact layer disposed on the substrate;
a semiconductor layer mesa including a lower reflector layer, an active layer, an upper reflector layer, and an upper contact layer which are laminated, in the order named, on the lower contact layer;
an annular electrode disposed on the upper contact layer; and
a light transmitting window situated inside the annular electrode to transmit laser light,
wherein the upper reflector layer includes a first region and a second region, the first region being inclusive of an area situated directly below the electrode and the light transmitting window, the second region being inclusive of an area outside the mesa and inclusive of a surrounding area of the first region within the mesa having the first region situated therein,
wherein a proton concentration in the first region is lower than a proton concentration in the second region, and
wherein the upper reflector layer has carbon doped therein as an impurity element, and the second region has the proton concentration therein higher than a carbon concentration therein.

### Claim 2 (depends on 1)

The surface emitting laser as claimed in claim 1, wherein the first region has the proton concentration therein lower than a carbon concentration therein.

### Claim 3 (depends on 1)

The surface emitting laser as claimed in claim 1, wherein the proton concentration in the second region is greater than or equal to 1×1018 cm−3 and less than or equal to 1×1020 cm−3.

### Claim 4 (depends on 1)

The surface emitting laser as claimed in claim 1, further comprising a first electrode pad connected to the upper contact layer and a second electrode pad connected to the lower contact layer, wherein the first electrode pad and the second electrode pad are disposed on the second region.