# US 11,444,267 B2 · Organic light emitting device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,444,267 B2 - Document ID: US11444267B2 - Status: Granted - Kind: B2 - Application number: 16/976,533 - Filed: 2019-07-10 - Published: 2021-03-11 - Granted: 2022-09-13 - Earliest claimed: 2018-07-12 - Assignees: Gu'an Yeolight Technology Co., Ltd. - Applicants: Gu'an Yeolight Technology Co., Ltd. - Inventors: Yuhao Li; Lixue Guo; Jun Wang; Jing Xie; Yingguang Zhu; Yonglan Hu - Web page: https://patentgrep.com/patent/US11444267B2 ## CPC - H10K 50/155: comprising dopants - H10K 50/165: comprising dopants - H10K 50/865: {comprising light absorbing layers, e.g. light-blocking layers} - H10K 85/30: Coordination compounds - H10K 85/60: Organic compounds having low molecular weight (H10K85/10 - H10K85/50 take precedence) - H10K 85/631: {Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine} - H10K 85/6572: {comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole} - H10K 2101/40: Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers - H10K 2102/331: {Nanoparticles used in non-emissive layers, e.g. in packaging layer} - H10K 2102/351: {Thickness} - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract The organic light emitting device comprises a substrate, a first electrode, an organic layer, a second electrode and a packaging structure which are provided in sequence; the organic layer comprises a light-emitting layer, a hole transport functional layer and an electron transport functional layer located on two sides of the light-emitting layer; a high-energy light sacrificial layer is provided between an electrode corresponding to a light-emergent face of a light-emitting device and the light-emitting layer, and the high-energy light sacrificial layer contains a light absorbing material; a first additional functional layer for avoiding electroluminescence is provided between the high-energy light sacrificial layer and the light-emitting layer. ## Claims ### Claim 1 An organic light emitting device comprising a substrate, a first electrode, an organic layer, a second electrode, and a packaging structure that are sequentially stacked, wherein a light-emergent face of the organic light emitting device is located on the side of the first electrode or the second electrode; wherein the organic layer comprises a hole transport function layer, an electron transport function layer and a light-emitting layer between the hole transport function layer and the electron transport function layer; wherein the organic light emitting device further comprises a high-energy light sacrificial layer between the first electrode or the second electrode where the light-emergent face of the organic light emitting device is located and the light-emitting layer, wherein the high-energy light sacrificial layer is configured to absorb light whose photons have energy above a threshold; wherein the organic light emitting device further comprises a first additional functional layer configured to prevent electroluminescence in the high-energy light sacrificial layer and located between the high-energy light sacrificial layer and the light-emitting layer. ### Claim 2 (depends on 1) The organic light emitting device according to claim 1, wherein the high-energy light sacrificial layer is in the hole transport function layer and the hole transport function layer is a host doped with a light-absorbing material, or wherein the high-energy light sacrificial layer is in the electron transport function layer and the electron transport function layer is a host doped with a light-absorbing material. ### Claim 3 (depends on 1) The organic light emitting device according to claim 1, wherein the high-energy light sacrificial layer comprises the hole transport function layer and a layer of a light-absorbing material located in or on the hole transport function layer, or wherein the high-energy light sacrificial layer comprises the electron transport function layer and a layer of a light-absorbing material located in or on the electron transport function layer. ### Claim 4 (depends on 2) The organic light emitting device according to claim 2, wherein the light-absorbing material includes at least one of a photoluminescent material, a colored light-absorbing material, and an exciton quenching material. ### Claim 5 (depends on 4) The organic light emitting device according to claim 4, wherein the lowest energy starting position of the absorption spectrum of the photoluminescent material is higher than the highest energy dominant peak energy position of the emission spectrum of the light-emitting layer material and lower than the optical energy gap of a host material of the high-energy light sacrificial layer. ### Claim 6 (depends on 4) The organic light emitting device according to claim 4, wherein the photoluminescent material is any one of a fluorescent material, a phosphorescent material or a quantum dot light-emitting material. ### Claim 7 (depends on 4) The organic light emitting device according to claim 4, wherein the volume percentage of the light-absorbing material in the high-energy light sacrificial layer is more than or equal to 0.1% and less than or equal to 30%. ### Claim 8 (depends on 7) The organic light emitting device according to claim 7, wherein the volume percentage of the photoluminescent material in the high-energy light sacrificial layer is more than or equal to 0.1% and less than or equal to 15%. ### Claim 9 (depends on 7) The organic light emitting device according to claim 7, wherein the volume percentage of the colored light-absorbing material in the high-energy light sacrificial layer is more than or equal to 0.1% and less than or equal to 10%. ### Claim 10 (depends on 7) The organic light emitting device according to claim 7, wherein the volume percentage of the exciton quenching material in the high-energy light sacrificial layer is more than or equal to 2% and less than or equal to 15%. ### Claim 11 (depends on 4) The organic light emitting device according to claim 4, wherein the colored light-absorbing material includes at least one of a salicylate, a benzophenone, a benzotriazole, a substituted acrylonitrile, a triazine, a direct dye, a basic dye, an acid dye, a disperse dye, a reactive dye, a sulfur dye, a vat dye and a cationic dye. ### Claim 12 (depends on 11) The organic light emitting device according to claim 11, wherein the colored light-absorbing material includes at least one of 2-(2′-xenyl 3′,5′-di-pentylphenyl) benzotriazole and 2-xenyl-4-n-octyloxybenzophenone. ### Claim 13 (depends on 4) The organic light emitting device according to claim 4, wherein the exciton quenching material includes at least one of an alkali metal group ionic compound, a metal salt, a metal oxide, a metal, a high electron affinity organic material, a high electron affinity organic metal complex, and a carbon material. ### Claim 14 (depends on 4) The organic light emitting device according to claim 4, wherein the exciton quenching material and a host material of the high-energy light sacrificial layer meet the following energy requirements: the gap between the highest occupied molecular orbital of the host material and the lowest unoccupied molecular orbital of the organic material and organic metal complex is 0.6 eV or less; the work function of the alkali metal ionic compound, the metal salt, the metal oxide, the metal, and the carbon material is lower than the lowest unoccupied molecular orbital of the colored light-absorbing material by more than 0.2 eV. ### Claim 15 (depends on 1) The organic light emitting device according to claim 1, wherein the material of the first additional functional layer has the same charge transport characteristics as a host material of the high-energy light sacrificial layer. ### Claim 16 (depends on 1) The organic light emitting device according to claim 1, wherein the thickness of the first additional function layer is more than or equal to 10 nm and less than or equal to 100 nm. ### Claim 17 (depends on 1) The organic light emitting device according to claim 1, wherein the thickness of the high-energy light sacrificial layer is more than or equal to 30 nm and less than or equal to 250 nm. ### Claim 18 A method for manufacturing an organic light emitting device, comprising the following steps: a first electrode, a high-energy light sacrificial layer, a first additional function layer, a light-emitting layer, an electron transport function layer or a hole transport function layer, and a second electrode are sequentially formed on a substrate by any way of vacuum thermal evaporation, wet process, inkjet printing technology, spin coating, and slit coating; wherein the light-emergent face of the light-emitting layer is located on the side of the first electrode; alternatively, a first electrode, a high-energy light sacrificial layer, a first additional function layer, an light-emitting layer, an electron transport function layer or a hole transport function layer, and a second electrode are sequentially formed on the substrate by any way of vacuum thermal evaporation, wet process, inkjet printing technology, spin coating, and slit coating; wherein the light-emergent face of the light-emitting layer is located on the side of the second electrode; wherein the high-energy light sacrificial layer contains a light-absorbing material that can absorb high-energy light; wherein the first additional functional layer contains a material that avoids electroluminescence.