# US 11,444,245 B2 · Rapid layer-specific photonic annealing of perovskite thin films

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- Number: US 11,444,245 B2
- Document ID: US11444245B2
- Status: Granted
- Kind: B2
- Application number: 16/534,313
- Filed: 2019-08-07
- Published: 2020-04-23
- Granted: 2022-09-13
- Earliest claimed: 2018-10-22
- Assignees: The Board of Trustees of The University of Alabama
- Applicants: The Board of Trustees of the University of Alabama
- Inventors: Dawen Li; Zhongliang Ouyang
- Web page: https://patentgrep.com/patent/US11444245B2

## CPC

- H10K 71/40: Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H01G 9/2059: {comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution}
- H10K 85/50: Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
- H01G 9/2027: {comprising an oxide semiconductor electrode}
- H01G 9/2031: {comprising titanium oxide, e.g. TiO2 (H01G9/2036 takes precedence)}
- H10K 30/10: comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K 30/20: comprising organic-organic junctions, e.g. donor-acceptor junctions
- H10K 30/50: Photovoltaic [PV] devices
- H10K 85/1135: {Polyethylene dioxythiophene [PEDOT]; Derivatives thereof}
- H10K 2102/103: {comprising indium oxides, e.g. ITO}
- Y02E 10/549: Organic PV cells
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

Disclosed herein are methods of annealing a perovskite layer, comprising irradiating the perovskite layer with a light source, wherein the light source emits radiation consisting essentially of wavelengths within 50 nm of the wavelength of maximum absorbance (λmax) of the perovskite layer, thereby annealing the perovskite layer. Also disclosed herein are semiconducting devices and articles of manufacture comprising an annealed perovskite layer made by any of the methods described herein, such as solar cells, light-emitting diodes, photodetectors, thin-film transistors, and combinations thereof.

## Claims

### Claim 1

A method of forming a solar cell, the method comprising, in any order:
depositing a hole transport layer on an anode;
depositing a precursor layer on the hole transport layer, the precursor layer comprising a perovskite precursor composition;
depositing an electron transport layer on the precursor layer; and
irradiating the solar cell by direct exposure to a UV light emitting diode (UV-LED) light source configured to convert the perovskite precursor composition into a perovskite and thus convert the precursor layer into a perovskite layer;
wherein the light source emits radiation consisting essentially of wavelengths within 50 nm of the wavelength of maximum absorbance (λmax) of the precursor layer;
wherein the light source emits radiation having wavelength of 400 nm or less; and
wherein the method substantially excludes thermal conduction outside the precursor layer and/or the perovskite layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the light source consists essentially of wavelengths within 30 nm of λmax of the perovskite layer.

### Claim 3 (depends on 1)

The method of claim 1, wherein the λmax is from 300 nm to 400 nm.

### Claim 4 (depends on 1)

The method of claim 1, wherein the light source emits radiation having a spectral width of 10 nm or less.

### Claim 5 (depends on 1)

The method of claim 1, wherein the solar cell is irradiated for a total amount of time of from 1 millisecond to 1 minute.

### Claim 6 (depends on 1)

The method of claim 1, wherein the solar cell is irradiated for a total amount of time of 1 minute or less.

### Claim 7 (depends on 1)

The method of claim 1, wherein the perovskite layer has an average thickness of from 300 nm to 1000 nm.

### Claim 8 (depends on 1)

The method of claim 1, wherein the precursor layer is prepared by a solution processing technique.

### Claim 9 (depends on 1)

The method of claim 1, wherein the precursor layer is prepared by a roll-to-roll printing process.

### Claim 10 (depends on 1)

The method of claim 1, wherein the perovskite layer consists essentially of X-Ray Diffraction peaks for perovskite only after irradiating with the UV light emitting diode (UV-LED) light source.

### Claim 11 (depends on 1)

The method of claim 1, wherein the light source emits pulsed radiation and irradiating the solar cell comprises applying a plurality of pulses.

### Claim 12 (depends on 11)

The method of claim 11, wherein each pulse is from 1 millisecond to less than 1 minute.

### Claim 13 (depends on 1)

The method of claim 1, wherein the perovskite layer comprises a perovskite material having the formula QZX3, wherein Q refers to an organic group or an inorganic group, Z represents a metal, and X is a halide.

### Claim 14 (depends on 13)

The method of claim 13, wherein Z is Pb, Sn, Cs, or combinations thereof.

### Claim 15 (depends on 13)

The method of claim 13, wherein X is I, Cl, Br, or a combination thereof.

### Claim 16 (depends on 13)

The method of claim 13, wherein the perovskite comprises CH3NH3PbI3, CH3NH3PbI2Cl, derivatives thereof, or combinations thereof.

### Claim 17 (depends on 13)

The method of claim 13, wherein Q is an inorganic group.

### Claim 18 (depends on 13)

The method of claim 13, wherein Q is methylammonium (CH3NH3), formamidinum (CH(NH2)2), or a combination thereof.