# US 11,444,244 B2 · Mask plate and fabrication method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,444,244 B2 - Document ID: US11444244B2 - Status: Granted - Kind: B2 - Application number: 16/209,862 - Filed: 2018-12-04 - Published: 2019-10-24 - Granted: 2022-09-13 - Earliest claimed: 2018-04-19 - Assignees: Ningbo Semiconductor International Corporation - Applicants: Ningbo Semiconductor International Corporation - Inventors: Mengbin Liu; Hailong Luo - Web page: https://patentgrep.com/patent/US11444244B2 ## CPC - C23C 14/042: {using masks} - C23C 16/042: {using masks} - C23F 1/02: Local etching - H10K 71/164: {using vacuum deposition} - H10K 71/166: {using selective deposition, e.g. using a mask} - G03F 7/12: Production of screen printing forms or similar printing forms, e.g. stencils - H10K 50/11: characterised by the electroluminescent [EL] layers - H10K 50/15: Hole transporting layers - H10K 50/16: Electron transporting layers - H10K 71/00: Manufacture or treatment specially adapted for the organic devices covered by this subclass - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - C23F: NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE (working metal by laser beams B23K26/00; desurfacing by applying flames B23K7/00; working of metal by electro-erosion B23H; producing decorative effects by removing surface material, e.g. by engraving, by etching, B44C1/22; electrolytic etching or polishing C25F); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract The present disclosure provides a mask plate and fabrication method thereof. The mask plate includes a substrate, having a first surface and a second surface, and containing a plurality of openings. The mask plate also includes a mask pattern layer, formed on the first surface of the substrate and including a plurality of pattern regions and a shield region surrounding the plurality of pattern regions. Each pattern region includes at least one through hole, and each opening formed in the substrate exposes a pattern region and the at least one through hole in the pattern region. The mask plate further includes a top substrate layer, formed on the mask pattern layer. The top substrate layer contains a plurality of grooves passing through the top substrate layer, and each groove exposes a pattern region in the mask pattern layer and exposes the at least one through hole in the pattern region. ## Claims ### Claim 1 A mask plate, comprising: a substrate, having a first surface and a second surface opposite to the first surface, wherein the substrate contains an opening passing through the substrate; a mask pattern layer, formed on the first surface of the substrate and including a pattern region and a shield region surrounding the pattern region, wherein the pattern region includes at least one through hole, and the opening formed in the substrate exposes the pattern region and the at least one through hole in the pattern region; a top substrate layer, formed on the mask pattern layer, wherein the top substrate layer contains a groove passing there-through, and the groove formed in the top substrate layer exposes the pattern region in the mask pattern layer and exposes the at least one through hole in the pattern region; and a protective layer, formed on the top substrate layer and containing a trench formed through the protective layer to connect to the groove, wherein the protective layer is a topmost layer of the mask plate. ### Claim 2 (depends on 1) The mask plate according to claim 1, wherein: the substrate is a bottom silicon layer of a silicon on insulator (SOI) structure; the top substrate layer is a top silicon layer of the SOI structure; and the mask pattern layer is a buried layer of the SOI structure. ### Claim 3 (depends on 1) The mask plate according to claim 1, wherein: the substrate is made of at least one of Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP, and InGaAs; and the top substrate layer is made of at least one of Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP, and InGaAs. ### Claim 4 (depends on 1) The mask plate according to claim 1, further including a support layer, wherein the support layer includes at least one of: a first support layer, covering one or more of the top substrate layer, a portion of the mask pattern layer exposed by the groove, and a sidewall surface of the at least one through hole in the pattern region; and a second support layer, covering one or more of a portion of the mask pattern layer exposed by the opening, the second surface of the substrate, a sidewall surface of the at least one through hole in the pattern region. ### Claim 5 (depends on 1) The mask plate according to claim 1, wherein: a thickness of the support layer formed on the sidewall surface of the at least one through hole is smaller than a radius of the through hole, and/or the support layer is made of a metal including at least one of Ni, Ag, Au, Cu, Pt, Cr, Mo, Ti, Ta, Sn, W, Al, or silicon nitride.