# US 11,444,241 B2 · Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-deposition

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- Number: US 11,444,241 B2
- Document ID: US11444241B2
- Status: Granted
- Kind: B2
- Application number: 17/121,457
- Filed: 2020-12-14
- Published: 2021-04-01
- Granted: 2022-09-13
- Earliest claimed: 2018-08-27
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Yi Yang; Dongna Shen; Vignesh Sundar; Yu-Jen Wang
- Web page: https://patentgrep.com/patent/US11444241B2

## CPC

- H10N 50/01: Manufacture or treatment
- H01F 10/3254: {the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]}
- H01F 41/308: {lift-off processes, e.g. ion milling, for trimming or patterning}
- H01F 41/34: in patterns, e.g. by lithography
- H10N 50/10: Magnetoresistive devices
- H10N 50/80: Constructional details
- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- H10B 61/00: Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A method for etching a magnetic tunneling junction (MTJ) structure is described. A MTJ stack is deposited on a bottom electrode wherein the MTJ stack comprises at least a pinned layer, a barrier layer on the pinned layer, and a free layer on the barrier layer, A top electrode layer is deposited on the MTJ stack. A hard mask is deposited on the top electrode layer. The top electrode layer and hard mask are etched. Thereafter, the MTJ stack not covered by the hard mask is etched, stopping at or within the pinned layer. Thereafter, an encapsulation layer is deposited over the partially etched MTJ stack and etched away on horizontal surfaces leaving a self-aligned hard mask on sidewalls of the partially etched MTJ stack. Finally, the remaining MTJ stack not covered by hard mask and self-aligned hard mask is etched to complete the MTJ structure.

## Claims

### Claim 1

A method comprising:
forming a stack of magnetic tunneling junction (MTJ) layers over a bottom electrode;
forming a top electrode layer on the stack of MTJ layers;
forming a hard mask on the top electrode layer;
patterning the top electrode layer while using the hard mask as a mask;
patterning a first portion of the stack of MTJ layers while using the hard mask as a mask such that a second portion of the stack of MTJ layers is not patterned by the patterning of the first portion of the stack of MTJ layers;
forming an encapsulation layer over the patterned first portion of stack of MTJ layers, the second portion of the stack of MTJ layers and the hard mask;
removing a portion of the encapsulation layer thereby forming a self-aligned hard mask on sidewalls of the patterned first portion of the stack of MTJ layers; and
patterning the second portion of the stack of MTJ layers while using the hard mask and the self-aligned hard mask as a mask, wherein the patterning of the second portion of the stack of MTJ layers while using the hard mask and the self-aligned hard mask as the mask includes removing a portion of the self-aligned hard mask to expose a sidewall surface of the patterned top electrode layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the second portion of the stack of MTJ layers includes a seed layer.

### Claim 3 (depends on 1)

The method of claim 1, wherein the patterned first portion of the stack of MTJ layers includes a tunnel barrier layer and a free layer.

### Claim 4 (depends on 1)

The method of claim 1, wherein the forming of the encapsulation layer over the patterned first portion of stack of MTJ layers, the second portion of the stack of MTJ layers and the hard mask includes forming the encapsulation layer directly on the patterned first portion of stack of MTJ layers, the second portion of the stack of MTJ layers and the hard mask.

### Claim 5 (depends on 1)

The method of claim 1, wherein a top surface of the hard mask is covered by the encapsulation layer after the forming of the encapsulation layer over the patterned first portion of stack of MTJ layers, the second portion of the stack of MTJ layers and the hard mask.

### Claim 6 (depends on 5)

The method of claim 5, wherein the top surface of the hard mask is exposed after the removing of the portion of the encapsulation layer.

### Claim 7 (depends on 1)

The method of claim 1, wherein the patterning of the second portion of the stack of MTJ layers exposes a top surface of the bottom electrode.

### Claim 8 (depends on 1)

The method of claim 1, wherein the patterning of the top electrode layer includes applying a halogen-based plasma process,
wherein the patterning of the first portion of the stack of MTJ layers includes applying a first reactive ion etching process or a first ion beam etching process, and
wherein the patterning of the second portion of the stack of MTJ layers includes applying a second reactive ion etching process or a second ion beam etching process.

### Claim 9 (depends on 1)

The method of claim 1, wherein the removing of the portion of the encapsulation layer includes:
applying a reactive ion etching process or an ion beam etching process to remove a first part of the portion of the encapsulation layer; and
applying a halogen-based plasma process to remove a second part of the portion of the encapsulation layer.

### Claim 10

A method comprising:
forming a stack of magnetic tunneling junction (MTJ) layers over a bottom electrode;
forming a top electrode layer on the stack of MTJ layers;
patterning the top electrode layer;
patterning a first portion of the stack of MTJ layers while using the patterned top electrode layer as a mask, wherein a second portion of the stack of MTJ layers covers a top surface of the bottom electrode after the patterning of the first portion of the stack of MTJ layers;
forming an encapsulation layer directly on the patterned first portion of stack of MTJ layers and the second portion of the stack of MTJ layers;
removing a portion of the encapsulation layer to thereby form a spacer on a sidewall of the patterned first portion of the stack of MTJ layers; and
patterning the second portion of the stack of MTJ layers while using the spacer as a mask, wherein the patterning of the second portion of the stack of MTJ layers while using the spacer as the mask includes removing a first portion of the spacer to expose a sidewall surface of the patterned top electrode layer.

### Claim 11 (depends on 10)

The method of claim 10, wherein the patterning of the second portion of the stack of MTJ layers exposes the top surface of the bottom electrode.

### Claim 12 (depends on 10)

The method of claim 10, wherein the second portion of the stack of MTJ layers has a top surface facing away from the bottom electrode, and
wherein the forming of the encapsulation layer directly on the second portion of the stack of MTJ layers includes forming the encapsulation layer directly on the top surface of the second portion of the stack of MTJ layers.

### Claim 13 (depends on 12)

The method of claim 12, wherein the top surface of the second portion of the stack of MTJ layers is defined by a seed layer.

### Claim 14 (depends on 10)

The method of claim 10, further comprising forming a patterned hard mask layer on the top electrode layer, and
wherein the forming of the encapsulation layer directly on the patterned first portion of stack of MTJ layers and the second portion of the stack of MTJ layers further includes forming the encapsulation layer directly on the patterned hard mask layer.

### Claim 15 (depends on 10)

The method of claim 10, wherein the removing of the portion of the encapsulation layer to thereby form the spacer on the sidewall of the patterned first portion of the stack of MTJ layers includes removing, via a first removal process, a first part of the portion of the encapsulation layer to expose a top surface of the patterned hard mask layer; and
wherein the patterning of the second portion of the stack of MTJ layers while using the spacer as the mask includes removing, via a second removal process, the first portion of the spacer to expose the sidewall surface of the patterned top electrode layer, the second removal process being different than the first removal process.

### Claim 16 (depends on 15)

The method of claim 15, wherein a second portion of the spacer remains disposed on the sidewall of the patterned first portion of the stack of MTJ layers after removing, via the second removal process, the first portion of the spacer to expose the sidewall surface of the patterned top electrode layer.

### Claim 17

A magnetic tunneling junction (MTJ) structure comprising:
a first MTJ cell disposed on a bottom electrode, the first MTJ cell including:
a seed layer, a pinned layer, a barrier layer and a free layer, wherein the seed layer has a top surface facing away from the bottom electrode;
a sidewall spacer disposed along and physically contacting sidewalls of the pinned layer, the barrier layer and the free layer, wherein the sidewall spacer extends to and physically contacts the top surface of the seed layer; and
a top electrode disposed over and having a bottom surface facing the free layer, the bottom surface of the top electrode extending between opposing sidewalls of the top electrode and at least a portion of the opposing sidewalls of the top electrode being free of the sidewall spacer.

### Claim 18 (depends on 17)

The MTJ structure of claim 17, wherein the seed layer is wider than each of the pinned layer, the barrier layer and the free layer, and
wherein the pinned layer, the barrier layer and the free layer each have substantially the same width.

### Claim 19 (depends on 17)

The MTJ structure of claim 17, further comprising a second MTJ cell on the bottom electrode, the second MTJ cell being spaced apart from the first MTJ cell on the bottom electrode.

### Claim 20 (depends on 18)

The MTJ structure of claim 18, wherein sidewall spacer includes an upper portion and a lower portion, the upper portion being further away from the bottom electrode than the lower portion and having a first thickness, the lower portion being closer to the bottom electrode than the upper portion and having a second thickness that is greater than the first thickness.