# US 11,444,226 B2 · Optoelectronic device with a component which is surface-mounted on a frame support structure, and reflective composite material for such a device

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- Number: US 11,444,226 B2
- Document ID: US11444226B2
- Status: Granted
- Kind: B2
- Application number: 16/629,846
- Filed: 2017-12-08
- Published: 2021-11-25
- Granted: 2022-09-13
- Earliest claimed: 2017-07-13
- Assignees: Alanod GmbH & Co. KG
- Applicants: Alanod GmbH & Co. KG
- Inventors: Stefan Ziegler
- Web page: https://patentgrep.com/patent/US11444226B2

## CPC

- G02B 5/0858: {the reflecting layers comprising a single metallic layer with one or more dielectric layers}
- H10H 20/856: Reflecting means
- C23C 4/06: Metallic material
- H05K 1/111: {Pads for surface mounting, e.g. lay-out}
- H10H 20/8506: {Containers}
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H05K 1/0209: {External configuration of printed circuit board adapted for heat dissipation, e.g. lay-out of conductors, coatings}
- H05K 3/202: {using self-supporting metal foil pattern}
- H05K 3/328: by welding
- H05K 2201/0338: Layered conductor, e.g. layered metal substrate, layered finish layer or layered thin film adhesion layer
- H05K 2201/10106: Light emitting diode [LED]
- H05K 2201/2054: Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics
- H10H 20/032: {of electrodes}
- H10W 72/07533: {Ultrasonic bonding, e.g. thermosonic bonding}
- H10W 72/5522: {comprising gold [Au]}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

An optoelectronic device (LV) with a reflective composite material (V) having a carrier (1) consisting of aluminium, having an interlayer (2) composed of aluminium oxide present on one side (A) of the carrier (1) and having a reflection-boosting optically active multilayer system (3) that has been applied via the interlayer (2). The interlayer (2) consisting of aluminium oxide has a thickness (D2) in the range from 5 nm to 200 nm and that, on the opposite side (B) of the carrier (1) from the reflection-boosting optically active multilayer system (3), a superficial layer (9) of a metal or metal alloy having, at 25° C., a specific electrical resistivity of not more than 1.2*10−1 Ωmm2/m has been applied. The thickness (D9) of the superficially applied layer (9) is in the range from 10 nm to 5.0 μm. For an optoelectronic device (LV), the leadframe (LF) has a metallic material with an aluminium carrier (1), on the surface (A) of which a metallic joining layer (FA) not consisting of aluminium has been applied locally at the bonding site (SP) of an electronic surface-mounted device (SMD) to a wire (D).

## Claims

### Claim 1

An optoelectronic device, comprising, a leadframe for an electronic surface-mounted device, wherein the leadframe comprises a metallic material and wherein the electronic surface-mounted device lies and is mounted on a top side of the leadframe, and is electrically contacted to the leadframe by a wire, the leadframe comprises a metallic material having an aluminium carrier, on a surface of which a metallic joining layer not consisting of aluminium has been applied locally at a site of bonding to the wire;
wherein a metal of the metallic ioining layer penetrates one or more layers present on a surface of the leadframe, the one or more layers consisting of an optical multilayer system, or an interlayer having an aluminium oxide formed atop the carrier.

### Claim 2 (depends on 1)

An optoelectronic device according to claim 1 further comprising, the metallic material of the leadframe is a reflective composite material and the electronic surface-mounted device is a light-emitting diode in the form of a chip.

### Claim 3 (depends on 1)

An optoelectronic device according to claim 1 further comprising, the metallic joining layer consists of silver.

### Claim 4 (depends on 1)

An optoelectronic device according to claim 1 further comprising, the metallic joining layer in a top view has a circular, a polygonal, or a rectangular form, covering an area having a diameter or an equivalent diameter or having edge lengths in the range from 10 μm to 200 μm.

### Claim 5 (depends on 1)

An optoelectronic device according to claim 1 further comprising, the metallic joining layer has a thickness in the range from 0.5 μm to 5.0 μm.

### Claim 6 (depends on 1)

An optoelectronic device according to claim 1 further comprising, the metallic joining layer is applied by a cold gas welding, where an oxygen content in the metallic joining layer is less than 0.5 per cent by weight.

### Claim 7 (depends on 1)

An optoelectronic device according to claim 1 further comprising, a cohesive bond has been formed between a metal of the metallic joining layer and the aluminium carrier of the leadframe.

### Claim 8 (depends on 1)

An optoelectronic device according to claim 1 further comprising, the wire consists of a one or more metal in the form of gold, silver, copper, platinum or aluminium, or of alloys and material combinations of the one or more metals.

### Claim 9 (depends on 1)

An optoelectronic device according to claim 1 further comprising, the wire has a surface coating composed of gold, silver, copper, platinum or aluminium or alloys of gold, silver, copper, platinum or aluminium.

### Claim 10 (depends on 1)

An optoelectronic device according to claim 1 further comprising, the wire has a diameterin the range from 15 μm to 35 μm.

### Claim 11 (depends on 1)

An optoelectronic device according to claim 1 further comprising, the wire at a site of the joining layer is bonded to the leadframe by ultrasound welding.

### Claim 12 (depends on 1)

An optoelectronic device according to claim 1 further comprising, a composite composed of the electronic surface-mounted device and the leadframe on an underside of the leadframe is cohesively bonded in an electrically conductive manner to a printed circuit board.

### Claim 13 (depends on 12)

An optoelectronic device according to claim 12 further comprising, the leadframe has been connected to the printed circuit board via a tin-containing solder layer.

### Claim 14 (depends on 12)

An optoelectronic device according to claim 12 further comprising, the device is a light-emitting device the electronic surface-mounted device is a light-emitting diode in the form of a chip.

### Claim 15 (depends on 1)

A reflective composite material adapted for use as a leadframe in an optoelectronic device according to claim 1 further comprising, an interlayer of aluminium oxide atop the carrier on one side and having a reflection-boosting optically active multilayer system that has been applied to the interlayer, the interlayer consisting of aluminium oxide having a thickness in the range from 5 nm to 200 nm and in that, on an opposite side of the carrier from the reflection-boosting optically active multilayer system, a superficial layer of a metal or a metal alloy having a specific electrical resistivity at 25° C. of not more than 1.2*10−1 Ωmm2/m has been applied, where the thickness of the superficially applied layer is in the range from 10 nm to 5.0 μm.

### Claim 16 (depends on 15)

A composite material according to claim 15 further comprising, the superficial layer of a metal or metal alloy that has been superficially applied on the opposite side of the carrier from the reflection-boosting optically active multilayer system has a specific electrical resistivity at 25° C. of not more than 2.7*10−2 Ωmm2/m.

### Claim 17 (depends on 15)

A composite material according to claim 15 further comprising, the interlayer consisting of aluminium oxide having a thickness in the range from 10 to 100 nm.

### Claim 18 (depends on 15)

A composite material according to claim 15 further comprising, an adhesion promoter layer of a transition metal, formed of one or more of titanium, chromium or nickel, is disposed between the aluminium carrier and the superficially applied layer of a metal or metal alloy.

### Claim 19 (depends on 15)

A composite material according to claim 15 further comprising, the superficially applied layer of a metal or metal alloy is a silver layer, having a thickness in the range from 10 nm to 500 nm.

### Claim 20 (depends on 15)

A composite material according to claim 15 further comprising, a passivation layer which consists of one or more of Ag, Ni, Pd and Au and having a thickness in the range from 10 nm to 500 nm, is deposited atop the superficially applied layer of a metal or metal alloy.

### Claim 21 (depends on 15)

A composite material according to claim 15 further comprising, a silver layer as the superficially applied layer or as a passivation layer present thereon or as a reflection layer of the reflection-boosting optically active multilayer system is in the form of an alloy and comprises, one or more rare earth elements including one or more of palladium, platinum, gold, copper, indium, titanium, tin and molybdenum.

### Claim 22 (depends on 15)

A composite material according to claim 15 further comprising, one or more of the layers arranged atop the interlayer, and the superficially applied layer of a metal or metal alloy or the passivation layer are sputtered layers, produced by reactive sputtering, CVD layers or PECVD layers, or layers produced by evaporation, by electron bombardment or from thermal sources.

### Claim 23 (depends on 15)

A composite material according to claim 15 further comprising, the aluminium in the carrier has a higher purity than 99.0%.

### Claim 24 (depends on 15)

A composite material according to claim 15 further comprising, the carrier has a thickness of 0.1 to 1.5 mm.

### Claim 25 (depends on 15)

A composite material according to claim 15 further comprising, a total light reflectance determined according to DIN 5036, Part 3 (11/79 edition) on the one side of the optical multilayer system is greater than 97%.

### Claim 26 (depends on 15)

A composite material according to claim 15 further comprising, formation as a coil with a width of up to 1600 mm.

### Claim 27 (depends on 15)

A composite material according to claim 15 further comprising, the leadframe for an electronic surface-mounted device is a light-emitting device, wherein the electronic surface-mounted device lies on and is secured to a top side of the leadframe and is electrically contacted to the leadframe by the wire via a metallic joining layer, and wherein the composite composed of the electronic surface-mounted device and the leadframe is cohesively bonded on an underside in an electrically conductive manner to a printed circuit board.

### Claim 28 (depends on 15)

A composite material according to claim 15 further comprising, a formation as a leadframe for a surface-mounted device, wherein the leadframe in a top view has the shape of an H, a crossbar of which runs obliquely between tracks in the form of fingers, and wherein the leadframe has been manufactured as a stamped or bent part or by laser cutting.

### Claim 29 (depends on 28)

A composite material according to claim 28 further comprising, formation as a frame device in the form of a circuit board in strip form, in which a multitude of the leadframes are combined in fields in the form of line and column elements via connectors.