# US 11,444,222 B2 · Nitride semiconductor light-emitting element and production method for nitride semiconductor light-emitting element

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- Number: US 11,444,222 B2
- Document ID: US11444222B2
- Status: Granted
- Kind: B2
- Application number: 16/645,906
- Filed: 2018-07-31
- Published: 2020-09-03
- Granted: 2022-09-13
- Earliest claimed: 2017-09-12
- Assignees: Nikkiso Co., Ltd.
- Applicants: Nikkiso Co., Ltd.
- Inventors: Yuta Furusawa; Mitsugu Wada; Yusuke Matsukura; Cyril Pernot
- Web page: https://patentgrep.com/patent/US11444222B2

## CPC

- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H01S 5/2206: {based on III-V materials}
- H01S 5/2216: {nitrides}
- H01S 5/3216: {quantum well or superlattice cladding layers}
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H 20/825: containing nitrogen, e.g. GaN
- H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN and having a first Al composition ratio, and a multiple quantum well layer in which a plurality (number N) of barrier layers including AlGaN having a second Al composition ratio more than the first Al composition ratio and a plural (number N) well layers having an Al composition ratio less than the second Al composition ratio are stacked alternately in this order, wherein the second Al composition ratio of the plurality of barrier layers of the multiple quantum well layer increases at a predetermined increase rate from an n-type cladding layer side toward an opposite side to the n-type cladding layer side.

## Claims

### Claim 1

A nitride semiconductor light-emitting element, comprising:
an n-type cladding layer comprising n-type AlGaN and having a first Al composition ratio; and
a multiple quantum well layer in which a plurality (number N) of barrier layers comprising AlGaN having a second Al composition ratio more than the first Al composition ratio and a plurality (number N) of well layers having an Al composition ratio less than the second Al composition ratio are stacked alternatively in this order,
wherein the second Al composition ratio of the plurality of barrier layers of the multiple quantum well layer increases at a predetermined increase rate from an n-type cladding layer side toward an opposite side to the n-type cladding layer side, and
wherein the increase rate has a value between 1.1% and 2.7%.

### Claim 2 (depends on 1)

The nitride semiconductor light-emitting element according to claim 1, wherein the first Al composition ratio of the n-type cladding layer has a value between 50% and 60%.

### Claim 3 (depends on 2)

The nitride semiconductor light-emitting element according to claim 2, wherein the second Al composition ratio of the plurality of barrier layers has a value of not less than 80%.

### Claim 4 (depends on 1)

The nitride semiconductor light-emitting element according to claim 1, further comprising:
a graded layer located between the n-type cladding layer and the multiple quantum well layer, comprising AlGaN having an Al composition ratio that increases from the n-type cladding layer side toward the multiple quantum well layer.

### Claim 5

A production method for a nitride semiconductor light-emitting element, comprising:
forming an n-type cladding layer comprising n-type AlGaN on a substrate; and
forming a multiple quantum well layer in which a plurality (number N) of barrier layers comprising AlGaN having a second Al composition ratio more than the first Al composition ratio and a plurality (number N) of well layers having an Al composition ratio less than the second Al composition ratio are stacked alternatively in this order,
wherein the forming the plurality of barrier layers of the multiple quantum well layer is performed while increasing an Al feed rate at a predetermined increase rate from an n-type cladding layer side toward an opposite side to the n-type cladding layer side, and
wherein the increase rate has a value between 1.1% and 2.7%.