# US 11,444,172 B2 · Method for producing semiconductor device and semiconductor device

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- Number: US 11,444,172 B2
- Document ID: US11444172B2
- Status: Granted
- Kind: B2
- Application number: 16/756,109
- Filed: 2017-12-01
- Published: 2020-07-30
- Granted: 2022-09-13
- Earliest claimed: 2017-12-01
- Assignees: Mitsubishi Electric Corporation
- Applicants: Mitsubishi Electric Corporation
- Inventors: Atsushi Era
- Web page: https://patentgrep.com/patent/US11444172B2

## CPC

- H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT}
- H10D 30/4732: {using Group III-V semiconductor material}
- H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}
- H10D 62/824: comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/2904: {Silicon carbide}
- H10P 14/3216: {Nitrides}
- H10P 14/3251: {consisting of three or more layers}
- H10P 14/3416: {Nitrides}
- H10P 14/3444: {P-type}
- H10P 14/3446: {Transition metal elements; Rare earth elements}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Examples of a method for producing a semiconductor device includes: forming a barrier layer having a composition of InAlN or InAlGaN over a channel layer; forming a transition layer having a composition of InGaN on the barrier layer while raising a growth temperature; and forming a cap layer of GaN on the transition layer.

## Claims

### Claim 1

A semiconductor device, comprising:
a substrate;
a channel layer formed over the substrate;
a barrier layer of InAlN or InAlGaN formed over the channel layer;
a transition layer of InGaN formed on the barrier layer;
a cap layer formed by GaN on the transition layer; wherein
a composition of the transition layer is represented by InxGa1-xN, and
the value of x is greater than 0 and smaller than 1 and the value of x decreases in a direction from the barrier layer to the cap layer.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein
a C concentration in the cap layer is lower than a C concentration in the barrier layer.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein
a C concentration in the transition layer is lower than a C concentration in the barrier layer.

### Claim 4 (depends on 2)

The semiconductor device according to claim 2, wherein
a C concentration in the cap layer is lower than a C concentration in the transition layer.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein
a C concentration in the cap layer is 5×1016[cm−3] or lower.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, wherein
a C concentration in the transition layer is 1×1017[cm−3] or lower.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, wherein
a film thickness of the transition layer is 0.5 nm or more and 3 nm or less.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1, comprising:
a gate electrode provided on the cap layer;
a source electrode provided on the cap layer; and
a drain electrode provided on the cap layer; wherein
a band gap of the barrier layer is larger than a band gap of the channel layer;
thus constituting a high electron mobility transistor.