# US 11,444,121 B2 · Pixel or display with sub pixels selected by antifuse programming

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- Number: US 11,444,121 B2
- Document ID: US11444121B2
- Status: Granted
- Kind: B2
- Application number: 17/160,055
- Filed: 2021-01-27
- Published: 2022-05-05
- Granted: 2022-09-13
- Earliest claimed: 2020-10-30
- Assignees: Black Peak LLC
- Applicants: Scott Brad Herner
- Inventors: Scott Brad Herner
- Web page: https://patentgrep.com/patent/US11444121B2

## CPC

- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- H10W 90/00: Package configurations
- H10H 20/01: Manufacture or treatment
- H10H 20/824: comprising only Group III-V materials, e.g. GaP
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/851: Wavelength conversion means
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10P 74/232: {comprising connection or disconnection of parts of a device in response to a measurement}
- H10W 20/491: {Antifuses, i.e. interconnections changeable from non-conductive to conductive}
- H10H 20/018: {Bonding of wafers}
- H10H 20/0361: {of wavelength conversion means}
- H10H 20/0364: {of interconnections}
- H10H 20/8513: {having two or more wavelength conversion materials}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Devices and methods of their fabrication for pixels or displays are disclosed. Pixels and displays having redundant subpixels are described. Subpixels are initially isolated by an unprogrammed antifuse. A subpixel is connected to the display by programming the antifuse, electrically connecting it to the pixel or display. Defective subpixels can be determined by photoluminescent testing or electroluminescent testing, or both. A redundant subpixel can replace a defective subpixel before pixel or display fabrication is complete.

## Claims

### Claim 1

A display panel comprising:
a plurality of data circuits;
a plurality of select circuits; and
a plurality of subpixels arranged in a two dimensional array, wherein each subpixel comprises
an LED,
a control circuit that is coupled to the LED, and
an antifuse disposed between the control circuit and a data circuit.

### Claim 2 (depends on 1)

The display panel of claim 1 wherein each control circuit of the plurality of subpixels comprises at least one transistor, wherein the at least one transistor comprises single crystal semiconductor.

### Claim 3 (depends on 1)

The display panel of claim 1 wherein the antifuse comprises a first conductive layer, a second conductive layer, and an antifuse dielectric layer disposed between and in contact with the first and second conductive layers.

### Claim 4 (depends on 1)

The display panel of claim 1 wherein at least one subpixel of the plurality further comprises a wavelength-converting layer.

### Claim 5 (depends on 1)

The display panel of claim 1 wherein the largest dimension of at least one of the LEDs is less than 20 microns.

### Claim 6 (depends on 1)

The display panel of claim 1 where each LED comprises gallium nitride, indium gallium nitride, indium arsenide, aluminum gallium arsenide, gallium arsenide, gallium phosphide, gallium arsenide phosphide, aluminum indium gallium phosphide, gallium arsenide nitride, aluminum indium arsenide, aluminum antimonide, indium phosphide, indium antimonide, or indium gallium arsenide phosphide, and combinations thereof.

### Claim 7

A display panel comprising:
a plurality of data circuits;
a plurality of select circuits; and
a plurality of subpixels arranged in a two dimensional array, wherein each subpixel comprises
an LED,
a control circuit that is coupled to the LED, and
an antifuse disposed between the control circuit and a select circuit of the plurality.

### Claim 8 (depends on 7)

The display panel of claim 7 wherein each control circuit of the plurality of subpixels comprises at least one transistor, wherein the at least one transistor comprises single crystal semiconductor.

### Claim 9 (depends on 7)

The display panel of claim 7 wherein each LED overlies the control circuit.

### Claim 10 (depends on 7)

The display panel of claim 7 wherein at least one subpixel of the plurality further comprises a wavelength-converting layer.

### Claim 11 (depends on 7)

The display panel of claim 7 wherein the largest dimension of at least one of the LEDs is less than 20 microns.

### Claim 12 (depends on 7)

The display panel of claim 7 where each LED comprises gallium nitride, indium gallium nitride, indium arsenide, aluminum gallium arsenide, gallium arsenide, gallium phosphide, gallium arsenide phosphide, aluminum indium gallium phosphide, gallium arsenide nitride, aluminum indium arsenide, aluminum antimonide, indium phosphide, indium antimonide, or indium gallium arsenide phosphide, and combinations thereof.