# US 11,444,118 B2 · Method of manufacturing an optoelectronic device comprising a plurality of diodes

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- Number: US 11,444,118 B2
- Document ID: US11444118B2
- Status: Granted
- Kind: B2
- Application number: 16/568,392
- Filed: 2019-09-12
- Published: 2020-03-19
- Granted: 2022-09-13
- Earliest claimed: 2018-09-13
- Assignees: Commissariat A L'energie Atomique Et Aux Energies Alternatives
- Applicants: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Inventors: Hubert Bono; Julia Simon
- Web page: https://patentgrep.com/patent/US11444118B2

## CPC

- H10H 29/14: comprising multiple light-emitting semiconductor components
- H10F 39/103: {the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors}
- H10F 71/1278: {comprising nitrides, e.g. GaN}
- H10F 77/206: {for devices having potential barriers}
- H10H 20/018: {Bonding of wafers}
- H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
- H10H 20/8312: {extending at least partially through the bodies}
- H10H 20/855: Optical field-shaping means, e.g. lenses
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10W 90/00: Package configurations
- H10H 20/032: {of electrodes}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method of manufacturing an optoelectronic device, including: a) transferring, onto a connection surface of a control circuit, an active diode stack including at least first and second semiconductor layers of opposite conductivity types, so that the second semiconductor layer in the stack faces the connection surface of the control circuit and is separated from the connection surface of the control circuit by at least one insulating layer; b) forming in the active stack trenches delimiting a plurality of diodes, the trenches extending through the insulating layer and emerging onto the connection surface of the control circuit; and c) forming in the trenches metallizations connecting the second semiconductor layer to the connection surface of the control circuit.

## Claims

### Claim 1

A method of manufacturing an optoelectronic device, comprising the steps of:
a) transferring, onto a connection surface of a control circuit, an active diode stack comprising at least first and second doped semiconductor layers of opposite conductivity types, so that the second semiconductor layer of the stack faces the connection surface of the control circuit and is separated from the connection surface of the control circuit by at least one electrically-insulating layer, said at least one insulating layer and said active diode stack extending over the entire surface of the control circuit;
b) forming in the active stack trenches delimiting a plurality of diodes, the trenches further extending through said at least one insulating layer and emerging onto the connection surface of the control circuit;
c) forming in said trenches first metallizations connecting the second semiconductor layer of the stack to the connection surface of the control circuit;
further comprising forming, in said trenches, of second metallizations insulated from the first metallizations, in contact with the sides of the first semiconductor layer;
further comprising, successively
a first step of partial forming of the trenches all the way to an intermediate level of the first semiconductor layer;
a step of deposition of a first metal layer on the lateral walls of the trenches;
a step of forming of first spacers made of an insulating material on the lateral walls of the trenches;
a step of extension of the trenches all the way to an intermediate level of the second semiconductor layer;
a step of forming of second spacers made of an insulating material on the lateral walls of the trenches;
a step of extension of the trenches all the way to the connection surface of the control circuit; and
a step of deposition of a second metal layer on the lateral walls of the trenches,
wherein the first metallizations are formed in the second metal layer and the second metallizations are formed in the first metal layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein, at step a), the active diode stack is bonded to the control circuit by means of a layer made of an electrically-insulating bonding material forming said at least one insulating layer.

### Claim 3 (depends on 2)

The method of claim 2, wherein the electrically-insulating bonding material is an organic glue.

### Claim 4 (depends on 1)

The method of claim 1, further comprising, before step a), a step of deposition of a metal layer on top of and in contact with the entire surface of the second semiconductor layer of the active stack.

### Claim 5 (depends on 1)

The method of claim 1, wherein, during the implementation of step a), the active stack is supported by a support substrate located on the side of the first semiconductor layer opposite to the second semiconductor layer, the method further comprising, between step a) and step b), a step of removing the support substrate.

### Claim 6 (depends on 1)

The method of claim 1, wherein said semiconductor diodes are light-emitting diodes.

### Claim 7 (depends on 1)

The method of claim 1, wherein said diodes are photodiodes.

### Claim 8 (depends on 1)

The method of claim 1, wherein the first and second semiconductor layers are gallium nitride layers, said diodes being gallium nitride diodes.

### Claim 9 (depends on 1)

The method of claim 1, wherein the control circuit is formed inside and on top of a semiconductor substrate.

### Claim 10

A method of manufacturing an optoelectronic device, comprising the steps of:
a) transferring, onto a connection surface of a control circuit, an active diode stack comprising at least first and second doped semiconductor layers of opposite conductivity types, so that the second semiconductor layer of the stack faces the connection surface of the control circuit and is separated from the connection surface of the control circuit by at least one electrically-insulating layer, said at least one insulating layer and said active diode stack extending over the entire surface of the control circuit; and
b) forming in the active stack trenches delimiting a plurality of diodes, the trenches further extending through said at least one insulating layer and emerging onto the connection surface of the control circuit; and
c) forming in said trenches first metallizations connecting the second semiconductor layer of the stack to the connection surface of the control circuit;
further comprising, before step a):
a step of deposition of a first insulating layer over the entire connection surface of the control circuit; and
a step of deposition of a second insulating layer over the entire surface of the second semiconductor layer of the active diode stack,
and wherein, at step a), the active diode stack is bonded to the control circuit by direct bonding of the first insulating layer to the second insulating layer, said at least one electrically-insulating layer being formed by the stacking of the first and second insulating layers.

### Claim 11 (depends on 2)

The method of claim 2, wherein the first and second insulating layers are made of silicon oxide.