# US 11,444,117 B2 · Light emitting element, light emitting element manufacturing method, and display device including light emitting element > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,444,117 B2 - Document ID: US11444117B2 - Status: Granted - Kind: B2 - Application number: 17/257,610 - Filed: 2019-07-10 - Published: 2021-09-09 - Granted: 2022-09-13 - Earliest claimed: 2018-07-13 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Jinhee Kang; Jitsuo Ota - Web page: https://patentgrep.com/patent/US11444117B2 ## CPC - H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) - H10H 29/14: comprising multiple light-emitting semiconductor components - G09G 3/32: semiconductive, e.g. using light-emitting diodes [LED] - H10D 86/40: characterised by multiple TFTs - H10D 86/60: wherein the TFTs are in active matrices - H10H 20/0137: {the light-emitting regions comprising nitride materials} - H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions - H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures - H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/8312: {extending at least partially through the bodies} - H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10W 90/00: Package configurations - G09G 2320/0242: Compensation of deficiencies in the appearance of colours - G09G 2330/023: using energy recovery or conservation - G09G 2330/10: Dealing with defective pixels - H10H 20/032: {of electrodes} - H10H 20/034: {of coatings} - H10H 20/835: {Reflective materials} - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A light emitting element, a manufacturing method therefor, and a display device including the light emitting element are disclosed. Particularly, disclosed are a multi-tunnel junction light emitting element having two or more light emitting regions, which are horizontally separated from each other, and a manufacturing method therefor, and disclosed is a display device which includes the light emitting element so as to efficiently arrange pixels and independently control the light emitting regions. ## Claims ### Claim 1 A light emitting element comprising: a first light emitting cell comprising a first light emitting layer and a plurality of conductive semiconductor layers laminated on upper and lower portions of the first light emitting layer, wherein the plurality of conductive semiconductor layers comprise a p+-GaN and a n+-GaN layer sequentially laminated on an upper portion of the first light emitting layer; a second light emitting cell comprising a second light emitting layer configured to emit light different from the first light emitting layer, and a plurality of conductive semiconductor layers laminated on upper and lower portions of the second light emitting layer; an insulating layer provided on the first light emitting cell and the second light emitting cell so that the first light emitting cell and the second light emitting cell are electrically separated from each other; a reflective layer provided on at least a portion of the insulating layer; a passivation layer provided on at least a portion of the reflective layer; a common electrode configured to be electrically connected to the first light emitting cell and the second light emitting cell; a first pixel electrode configured to be electrically connected to the first light emitting cell; and a second pixel electrode configured to be electrically connected to the second light emitting cell, wherein a light emitting region of the first light emitting cell and a light emitting region of the second light emitting cell are horizontally separated from each other by the common electrode. ### Claim 2 (depends on 1) The light emitting element according to claim 1, wherein the plurality of conductive semiconductor layers comprises a first n-GaN layer laminated on a lower portion of the first light emitting layer, a first p-GaN layer laminated on an upper portion of the first light emitting layer, a second n-GaN layer laminated on a lower portion of the second light emitting layer, and a second p-GaN layer laminated on an upper portion of the second light emitting layer, and wherein the p+-GaN and the n+-GaN layer are sequentially laminated on an upper portion of the first p-GaN layer. ### Claim 3 (depends on 1) The light emitting element according to claim 1, further comprising: a first contact hole formed in the insulating layer; and a second contact hole formed in the insulating layer, the reflective layer, and the passivation layer, wherein the first pixel electrode and the second pixel electrode are electrically connected to the plurality of conductive semiconductor layers via the reflective layer and the first contact hole, and wherein the common electrode is electrically connected to the plurality of conductive semiconductor layers via the second contact hole. ### Claim 4 (depends on 1) The light emitting element according to claim 1, wherein a light emitting area of the first light emitting cell is different from a light emitting area of the second light emitting cell. ### Claim 5 (depends on 1) The light emitting element according to claim 1, wherein the first light emitting layer and the second light emitting layer have a multi-quantum well structure. ### Claim 6 (depends on 1) The light emitting element according to claim 1, further comprising: a third light emitting cell comprising a third light emitting layer and a plurality of conductive semiconductor layers laminated on upper and lower portions of the third light emitting layer; and a third pixel electrode configured to be electrically connected to the third light emitting cell, wherein light emitted by the third light emitting layer is different from at least one of light emitted by the first light emitting layer and light emitted by the second light emitting layer, wherein the common electrode is configured to be electrically connected to the first light emitting cell, the second light emitting cell, and the third light emitting cell, and wherein the light emitting region of the first light emitting cell, the light emitting region of the second light emitting cell, and a light emitting region of the third light emitting cell are horizontally separated from each other by the common electrode. ### Claim 7 A display device comprising: a display panel comprising a light emitting element and a switching element; and a processor configured to control the display panel, wherein the light emitting element comprises: a first light emitting cell comprising a first light emitting layer and a plurality of conductive semiconductor layers laminated on upper and lower portions of the first light emitting layer, wherein the plurality of conductive semiconductor layers comprise a p+-GaN and a n+-GaN GaN layer sequentially laminated on an upper portion of the first light emitting layer; a second light emitting cell comprising a second light emitting layer configured to emit light different from the first light emitting layer, and a plurality of conductive semiconductor layers laminated on upper and lower portions of the second light emitting layer; an insulating layer provided on the first light emitting cell and the second light emitting cell so that the first light emitting cell and the second light emitting cell are electrically separated from each other; a reflective layer provided on at least a portion of the insulating layer; a passivation layer provided on at least a portion of the reflective layer; a common electrode configured to be electrically connected to the first light emitting cell and the second light emitting cell; a first pixel electrode configured to be electrically connected to the first light emitting cell; and a second pixel electrode configured to be electrically connected to the second light emitting cell, wherein a light emitting region of the first light emitting cell and a light emitting region of the second light emitting cell are horizontally separated from each other by the common electrode. ### Claim 8 (depends on 7) The display device according to claim 7, wherein the display panel comprises a first switching element electrically connected to the first pixel electrode and a second switching element electrically connected to the second pixel electrode, and wherein the processor is configured to independently control driving of the first light emitting cell and the second light emitting cell via the first switching element and the second switching element. ### Claim 9 (depends on 7) The display device according to claim 7, wherein the processor is configured to, based on a defective pixel being generated in at least one of the first light emitting cell and the second light emitting cell, control the driving of at least one of a first light emitting cell and a second light emitting cell included in a light emitting element adjacent to a light emitting element where the defective pixel is generated, to replace the defective pixel. ### Claim 10 (depends on 7) The display device according to claim 7, wherein a light emitting area of the first light emitting cell is different from a light emitting area of the second light emitting cell. ### Claim 11 (depends on 7) The display device of claim 7, wherein the plurality of conductive semiconductor layers comprises a first n-GaN layer laminated on a lower portion of the first light emitting layer, a first p-GaN layer laminated on an upper portion of the first light emitting layer, a second n-GaN layer laminated on a lower portion of the second light emitting layer, and a second p-GaN layer laminated on an upper portion of the second light emitting layer, and wherein the p+-GaN and the n+-GaN layer are sequentially laminated on an upper portion of the first p-GaN layer. ### Claim 12 A method for manufacturing a light emitting element, the method comprising: vapor-depositing a first light emitting layer, a second light emitting layer configured to emit light different from the first light emitting layer, and a plurality of conductive semiconductor layers laminated on upper and lower portions of the first light emitting layer on a substrate; forming a first light emitting cell including the first light emitting layer and the plurality of conductive semiconductor layers, wherein the plurality of conductive semiconductor layers comprise a p+-GaN and a n+-GaN layer sequentially laminated on an upper portion of the first light emitting layer; forming a second light emitting cell including the second light emitting layer and the plurality of conductive semiconductor layers and horizontally separated from the first light emitting cell; vapor-depositing an insulating layer on the first light emitting cell and the second light emitting cell so that the first light emitting cell is electrically separated from the second light emitting cell; vapor depositing a reflective layer provided on at least a portion of the insulating layer; vapor depositing a passivation layer provided on at least a portion of the reflective layer; forming a common electrode electrically connected to the first light emitting cell and the second light emitting cell in a region separated between the first light emitting cell and the second light emitting cell; forming a first pixel electrode electrically connected to the first light emitting cell; and forming a second pixel electrode electrically connected to the second light emitting cell. ### Claim 13 (depends on 12) The method according to claim 12, wherein the vapor-depositing the first light emitting layer, the second light emitting layer, and the plurality of conductive semiconductor layers comprises: vapor-depositing a first n-GaN layer on the substrate; vapor-depositing the first light emitting layer on an upper portion of the first n-GaN layer; vapor-depositing a first p-GaN layer on an upper portion of the first light emitting layer, and wherein the p+-GaN and the n+-GaN layer are sequentially vapor-deposited on an upper portion of the first p-GaN layer; vapor-depositing a second n-GaN layer on an upper portion of the n+-GaN layer; vapor-depositing the second light emitting layer on an upper portion of the second n-GaN layer; and vapor-depositing a second p-GaN layer on an upper portion of the second light emitting layer. ### Claim 14 (depends on 12) The method according to claim 12, further comprising: forming a first contact hole in the insulating layer; forming a second contact hole in the insulating layer, the reflective layer, and the passivation layer, wherein the forming the first contact hole comprises forming the first contact hole so that the first pixel electrode and the second pixel electrode are electrically connected to the plurality of conductive semiconductor layers via the reflective layer, and wherein the forming the second contact hole comprises forming the second contact hole so that the common electrode is electrically connected to the plurality of conductive semiconductor layers. ### Claim 15 (depends on 12) The method according to claim 12, wherein the forming the second light emitting cell comprises forming the second light emitting cell so that a light emitting area of the second light emitting cell is different from a light emitting area of the first light emitting cell.