# US 11,444,115 B2 · Solid-state imaging device and electronic apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,444,115 B2 - Document ID: US11444115B2 - Status: Granted - Kind: B2 - Application number: 17/237,934 - Filed: 2021-04-22 - Published: 2021-08-05 - Granted: 2022-09-13 - Earliest claimed: 2013-06-28 - Assignees: Sony Group Corporation - Applicants: Sony Group Corporation - Inventors: Hirotoshi Nomura - Web page: https://patentgrep.com/patent/US11444115B2 ## CPC - H10F 39/8057: {Optical shielding} - H04N 23/67: Focus control based on electronic image sensor signals - H04N 25/703: SSIS architectures incorporating pixels for producing signals other than image signals - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - H04N 25/771: comprising storage means other than floating diffusion - H04N 25/778: comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself - H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters - H10F 39/199: {Back-illuminated image sensors} - H10F 39/8023: {Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery} - H10F 39/8037: {the integrated elements comprising a transistor} - H10F 39/8053: {Colour filters} - H10F 39/8063: {Microlenses} - H10F 39/807: {Pixel isolation structures} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION ## Abstract A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other. ## Claims ### Claim 1 A light detection device, comprising: first, second, and third photoelectric conversion regions disposed in a substrate, wherein the second photoelectric conversion region is disposed adjacent to the first photoelectric conversion region the third photoelectric conversion region, and wherein the first, second, and third photoelectric conversion regions are disposed along a first direction; a first on-chip lens disposed above the first and second photoelectric conversion regions; a second on-chip lens disposed above the third photoelectric conversion region; a light shield, wherein at least a part of the light shield is disposed between the first photoelectric conversion region and the second photoelectric conversion region. ### Claim 2 (depends on 1) The light detecting device of claim 1, wherein the second on-chip lens is configured to focus incident light on a single photoelectric conversion region that corresponds to the third photoelectric conversion region. ### Claim 3 (depends on 1) The light detecting device of claim 1, wherein the light shield comprises a metal material. ### Claim 4 (depends on 1) The light detecting device of claim 1, further comprising: a first color filter disposed on the substrate between the first on-chip lens and the first and second photoelectric conversion regions; and a second color filter disposed on the substrate between the second on-chip lens and the third photoelectric conversion region. ### Claim 5 (depends on 4) The light detecting device of claim 4, wherein the first color filter corresponds to a white color filter, and wherein the second color filter corresponds to a red, blue, or green color filter. ### Claim 6 (depends on 1) The light detecting device of claim 1, further comprising: a trench in the substrate, wherein the light shield is disposed in the trench. ### Claim 7 (depends on 6) The light detecting device of claim 6, further comprising: a first film disposed on a light-receiving surface of the substrate and on sidewalls of the trench, wherein the light shield is disposed on sidewalls of the first film. ### Claim 8 (depends on 7) The light detecting device of claim 7, further comprising: a second film disposed over the light-receiving surface of the substrate and on the first film. ### Claim 9 (depends on 8) The light detecting device of claim 8, wherein the first film and the second film are insulating films. ### Claim 10 (depends on 8) The light detecting device of claim 8, wherein the second film contacts a surface of the light shield. ### Claim 11 An electronic apparatus, comprising: a signal processing circuit; and a light detecting device, including: first, second, and third photoelectric conversion regions disposed in a substrate, wherein the second photoelectric conversion region is disposed adjacent to the first photoelectric conversion region the third photoelectric conversion region, and wherein the first, second, and third photoelectric conversion regions are disposed along a first direction; a first on-chip lens disposed above the first and second photoelectric conversion regions; a second on-chip lens disposed above the third photoelectric conversion region; a light shield, wherein at least a part of the light shield is disposed between the first photoelectric conversion region and the second photoelectric conversion region. ### Claim 12 (depends on 11) The electronic apparatus of claim 11, wherein the second on-chip lens is configured to focus incident light on a single photoelectric conversion region that corresponds to the third photoelectric conversion region. ### Claim 13 (depends on 11) The electronic apparatus of claim 11, wherein the light shield comprises a metal material. ### Claim 14 (depends on 11) The electronic apparatus of claim 11, wherein the light detecting device further comprises: a first color filter disposed on the substrate between the first on-chip lens and the first and second photoelectric conversion regions; and a second color filter disposed on the substrate between the second on-chip lens and the third photoelectric conversion region. ### Claim 15 (depends on 14) The electronic apparatus of claim 14, wherein the first color filter corresponds to a white color filter, and wherein the second color filter corresponds to a red, blue, or green color filter. ### Claim 16 (depends on 11) The electronic apparatus of claim 11, the light detecting device further comprises: a trench in the substrate, wherein the light shield is disposed in the trench. ### Claim 17 (depends on 16) The electronic apparatus of claim 16, the light detecting device further comprises: a first film disposed on a light-receiving surface of the substrate and on sidewalls of the trench, wherein the light shield is disposed on sidewalls of the first film. ### Claim 18 (depends on 17) The electronic apparatus of claim 17, the light detecting device further comprises: a second film disposed over the light-receiving surface of the substrate and on the first film. ### Claim 19 (depends on 18) The electronic apparatus of claim 18, wherein the first film and the second film are insulating films. ### Claim 20 (depends on 18) The electronic apparatus of claim 18, wherein the second film contacts a surface of the light shield.