# US 11,444,112 B2 · Solid-state image pickup device and electronic apparatus having a wall between the first pixel and the second pixel > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,444,112 B2 - Document ID: US11444112B2 - Status: Granted - Kind: B2 - Application number: 17/307,556 - Filed: 2021-05-04 - Published: 2021-08-26 - Granted: 2022-09-13 - Earliest claimed: 2016-01-27 - Assignees: Sony Group Corporation - Applicants: Sony Group Corporation - Inventors: Atsushi Masagaki; Yusuke Tanaka - Web page: https://patentgrep.com/patent/US11444112B2 ## CPC - H10F 39/8053: {Colour filters} - G02B 7/34: using different areas in a pupil plane - H10F 39/8023: {Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery} - H10F 39/8027: {Geometry of the photosensitive area} - H10F 39/8063: {Microlenses} - H10F 39/807: {Pixel isolation structures} - H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels} - H10W 10/00: Isolation regions in semiconductor bodies between components of integrated devices - H10W 10/01: {Manufacture or treatment} - H04N 25/623: {by evacuation via the output or reset lines} - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - H04N 25/778: comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself - H10F 39/199: {Back-illuminated image sensors} - H10F 39/8037: {the integrated elements comprising a transistor} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION ## Abstract The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor. ## Claims ### Claim 1 A light detecting device, comprising: a first photoelectric conversion region disposed in a substrate wherein the substrate comprises a first surface and a second surface opposite the first surface, the first surface being a light incident surface of the substrate; a second photoelectric conversion region disposed in the substrate and adjacent to the first photoelectric conversion region; a first on-chip lens disposed above the first surface of the substrate, the first on-chip lens corresponding to the first photoelectric conversion region; and a second on-chip lens disposed above the first surface of the substrate and disposed adjacent to the first on-chip lens, the second on-chip lens corresponding to the second photoelectric conversion region, wherein the first photoelectric conversion region and the first on-chip lens are a part of a first pixel and the second photoelectric conversion region and the second on-chip lens are a part of a second pixel, the light detection device further comprising: a first wall disposed between the first pixel and the second pixel, wherein a part of the first wall is disposed at the first surface of the substrate; a second wall disposed between the first pixel and the second pixel, wherein a part of the second wall is disposed at the second surface of the substrate; and a first semiconductor region disposed in the substrate, wherein, in a cross-sectional view, the first semiconductor region is disposed between a first portion of the second wall and a second portion of the second wall. ### Claim 2 (depends on 1) The light detecting device according to claim 1, wherein the first wall overlaps the first semiconductor region in a plan view. ### Claim 3 (depends on 1) The light detecting device according to claim 1, wherein the first semiconductor region is one of a source and a drain of an amplification transistor. ### Claim 4 (depends on 1) The light detecting device according to claim 1, wherein the first semiconductor region is one of a source and a drain of a selection transistor. ### Claim 5 (depends on 1) The light detecting device according to claim 1, wherein the first semiconductor region is one of a source and a drain of a reset transistor. ### Claim 6 (depends on 1) The light detecting device according to claim 1, wherein the first semiconductor region is coupled to VSS. ### Claim 7 (depends on 6) The light detecting device according to claim 6, wherein the VSS is a ground level. ### Claim 8 (depends on 1) The light detecting device according to claim 1, wherein the first wall is not contact with the second wall. ### Claim 9 (depends on 1) The light detecting device according to claim 1, wherein a first length of the first wall in a depth direction of the substrate is different than a second length of the second wall in the depth direction of the substrate. ### Claim 10 (depends on 9) The light detecting device according to claim 9, wherein the first length is greater than the second length. ### Claim 11 (depends on 1) The light detecting device according to claim 1, further comprising a wiring layer, wherein the wiring layer is provided on the second surface of the substrate. ### Claim 12 (depends on 1) The light detecting device according to claim 1, wherein the first pixel further comprises a third photoelectric conversion region disposed in the substrate and disposed adjacent to the first photoelectric conversion region, the first on-chip lens further corresponding to the third photoelectric conversion region, and wherein the second pixel further comprises a fourth photoelectric conversion region disposed in the substrate and disposed adjacent to the second photoelectric conversion region, the second on-chip lens further corresponding to the fourth photoelectric conversion region. ### Claim 13 (depends on 12) The light detecting device according to claim 12, wherein the first pixel further comprises a first color filter disposed between the first on-chip lens and the substrate, wherein the second pixel further comprises a second color filter disposed between the second on-chip lens and the substrate, and wherein the first color filter and the second color filter are configured to pass light of a color different than each other. ### Claim 14 (depends on 12) The light detecting device according to claim 12, wherein the first and third photoelectric conversion regions are configured to receive light of a first color, and wherein the second and fourth photoelectric conversion regions are configured to receive light of a second color different than the first color. ### Claim 15 (depends on 12) The light detecting device according to claim 12, wherein each of the first pixel and the second pixel is configured to detect a phase difference. ### Claim 16 An electronic apparatus, comprising: a lens; a digital signal processing circuitry; and a light detecting device, comprising: a first photoelectric conversion region disposed in a substrate wherein the substrate comprises a first surface and a second surface opposite the first surface, the first surface being a light incident surface of the substrate; a second photoelectric conversion region disposed in the substrate and adjacent to the first photoelectric conversion region; a first on-chip lens disposed above the first surface of the substrate, the first on-chip lens corresponding to the first photoelectric conversion region; and a second on-chip lens disposed above the first surface of the substrate and disposed adjacent to the first on-chip lens, the second on-chip lens corresponding to the second photoelectric conversion region, wherein the first photoelectric conversion region and the first on-chip lens are a part of a first pixel and the second photoelectric conversion region and the second on-chip lens are a part of a second pixel, the light detection device further comprising: a first wall disposed between the first pixel and the second pixel, wherein a part of the first wall is disposed at the first surface of the substrate; a second wall disposed between the first pixel and the second pixel, wherein a part of the second wall is disposed at the second surface of the substrate; and a first semiconductor region disposed in the substrate, wherein, in a cross-sectional view, the first semiconductor region is disposed between a first portion of the second wall and a second portion of the second wall.