# US 11,444,090 B2 · Semiconductor device having a programming element

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- Number: US 11,444,090 B2
- Document ID: US11444090B2
- Status: Granted
- Kind: B2
- Application number: 16/853,613
- Filed: 2020-04-20
- Published: 2021-10-21
- Granted: 2022-09-13
- Earliest claimed: 2020-04-20
- Assignees: Semiconductor Components Industries, LLC
- Applicants: Semiconductor Components Industries, LLC
- Inventors: Jaume Roig-Guitart; Aurore Constant
- Web page: https://patentgrep.com/patent/US11444090B2

## CPC

- H10D 62/343: {Gate regions of field-effect devices having PN junction gates}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10B 20/25: One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
- H10D 8/053: {of heterojunction diodes or of tunnel diodes}
- H10D 8/50: PIN diodes
- H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT}
- H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}
- H10D 62/117: {Shapes of semiconductor bodies}
- H10D 62/124: {Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions}
- H10D 62/149: {Source or drain regions of field-effect devices}
- H10D 62/50: Physical imperfections
- H10D 62/824: comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
- H10P 50/646: {of Group III-V materials}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

An embodiment of a method of forming a programming element using a III/V semiconductor material may include forming one or more recesses in a first portion of a gate material and forming a first conductor on the one or more recesses. In an embodiment, the method may include configuring a programming circuit to form a voltage across the one or more recesses that is greater than a breakdown voltage of the gate material underlying the one or more recesses.

## Claims

### Claim 1

A GaN programming element comprising:
an AlGaN layer overlying a semiconductor substrate;
a first P-type GaN material on a first portion of the AlGaN layer, the first P-type GaN material having sides that have a first thickness and having a recess formed in the first P-type GaN material, the recess positioned between the sides, the first P-type GaN material that is underlying the recess having a second thickness that is less than the first thickness wherein a portion of the first P-type GaN material forms an anode of a GaN diode;
a first conductor physically contacting the first P-type GaN material that is underlying the recess; and
a second P-type GaN material overlying a second portion of the AlGaN layer wherein the second P-type GaN material forms at least a portion of a gate of an eHEMT, the second P-type GaN material spaced a first distance from the first P-type GaN material wherein a third portion of the AlGaN layer positioned between the anode and the gate forms a drain of the eHEMT.

### Claim 2 (depends on 1)

The GaN programming element of claim 1 wherein the first P-type GaN material that is underlying the recess has a conduction path therethrough and wherein the sides of first P-type GaN material do not have the conduction path.

### Claim 3 (depends on 1)

The GaN programming element of claim 1 wherein the first P-type GaN material that is underlying the recess has a first number of defects and wherein the sides of first P-type GaN material have a second number of defects that is at least one order of magnitude less than the first number of defects.

### Claim 4 (depends on 1)

The GaN programming element of claim 1 further including a programming circuit configured to apply a voltage that is greater than forward breakdown voltage of the first P-type GaN material that is underlying the recess but less than a forward breakdown voltage of the sides of first P-type GaN material.

### Claim 5 (depends on 1)

The GaN programming element of claim 1 wherein the first thickness is at least two times the second thickness.

### Claim 6 (depends on 1)

The GaN programming element of claim 1 wherein an unprogrammed state of the programming element includes that the first P-type GaN material that is underlying the recess forms a portion of the anode of the GaN diode.

### Claim 7 (depends on 6)

The GaN programming element of claim 6 wherein the first conductor forms a cathode of the GaN diode.

### Claim 8 (depends on 1)

The GaN programming element of claim 1 wherein a programmed state of the programming element includes that the first P-type GaN material forms a conduction path through the first P-type GaN material to the first portion of the AlGaN layer.

### Claim 9 (depends on 1)

The GaN programming element of claim 1 wherein the first P-type GaN material forms an anode of a PIN diode.

### Claim 10 (depends on 1)

The GaN programming element of claim 1 wherein the first P-type GaN material includes a plurality of recesses positioned between the sides.

### Claim 11 (depends on 1)

The GaN programming element of claim 1 wherein the GaN diode is connected in series with the drain.

### Claim 12 (depends on 11)

The GaN programming element of claim 11 wherein the anode is connected to the drain.

### Claim 13 (depends on 11)

The GaN programming element of claim 11 wherein the third portion of the AlGaN layer extends to connect the GaN diode to the drain.

### Claim 14 (depends on 11)

The GaN programming element of claim 11 wherein a current path is formed through the first P-type GaN material to the drain and through the drain.

### Claim 15

A programming element comprising:
a first semiconductor layer of a group III or group V semiconductor material wherein the first semiconductor layer forms a 2DEG with an underlying second semiconductor layer;
a first P-type GaN layer on a first portion of the first semiconductor layer, the first P-type GaN layer having a plurality of recesses in a first portion of the first P-type GaN layer;
a first conductor on the first P-type GaN layer including within the plurality of recesses;
a second P-type GaN layer on a second portion of the first semiconductor layer, the second P-type GaN layer spaced laterally apart from the first P-type GaN layer; and
a third portion of the first semiconductor layer disposed between the first P-type GaN layer and the second P-type GaN layer and extending from the first portion of the first semiconductor layer toward the second portion of the first semiconductor layer wherein the third portion of the first semiconductor layer forms both a portion of a drain of an eHEMT and a current flow path from the drain to the first P-type GaN layer.

### Claim 16 (depends on 15)

The programming element of claim 15 wherein the first P-type GaN layer forms a current path through the first P-type GaN layer to the third portion of the first semiconductor layer.

### Claim 17 (depends on 15)

The programming element of claim 15 wherein the first P-type GaN layer forms an anode of a diode.

### Claim 18

A programming element comprising:
a semiconductor substrate;
a first semiconductor layer of a group III or group V semiconductor material;
a second semiconductor layer underlying the first semiconductor layer wherein the first semiconductor layer and the second semiconductor layer form a 2DEG;
a first gate material overlying a first portion of the first semiconductor layer, the first gate material having one or more recesses in a first portion of the first gate material;
a first conductor on the first portion of the first gate material including on the one or more recesses;
a second gate material overlying a second portion of the first semiconductor layer wherein the second gate material is spaced laterally apart from the first gate material; and
a third portion of the first semiconductor layer extending from first portion of the first semiconductor layer to form a current path from the first conductor to the second portion of the first semiconductor layer.

### Claim 19 (depends on 18)

The programming element of claim 18 wherein the third portion of the first semiconductor layer extends coextensively between the first portion of the first semiconductor layer and the second portion of the first semiconductor layer.

### Claim 20 (depends on 18)

The programming element of claim 18 wherein the first gate material has a plurality of recesses.