# US 11,444,086 B2 · Capacitor and its formation method and a dram cell

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- Number: US 11,444,086 B2
- Document ID: US11444086B2
- Status: Granted
- Kind: B2
- Application number: 17/087,463
- Filed: 2020-11-02
- Published: 2021-03-11
- Granted: 2022-09-13
- Earliest claimed: 2019-04-22
- Assignees: Changxin Memory Technologies, Inc.
- Applicants: Changxin Memory Technologies, Inc.
- Inventors: Chi-Wei Dai
- Web page: https://patentgrep.com/patent/US11444086B2

## CPC

- H10B 12/31: {having a storage electrode stacked over the transistor}
- H10B 12/033: {the capacitor extending over the transistor}
- H10D 1/042: {using deposition processes to form electrode extensions}
- H10D 1/043: {using patterning processes to form electrode extensions, e.g. etching}
- H10D 1/714: {having horizontal extensions}
- H10D 1/716: {having vertical extensions}
- H10P 50/73: {using masks for insulating materials}
- H10W 44/601: {Capacitive arrangements (H10W44/20 takes precedence)}
- H10B 12/315: {with the capacitor higher than a bit line}
- H10P 32/302: {Doping polycrystalline silicon or amorphous silicon layers}
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention relates to a capacitor and its formation method and to a DRAM cell. In various embodiments, a substrate is provided such that an electrical contact portion is formed thereon. A dielectric layer is formed on a surface of the substrate, including alternately stacked supporting layers and sacrificial layers. At least two capacitor holes penetrating the sacrificial layers and the supporting layers can formed to expose the same electrical contact portion. A lower electrode layer covering the inner surface of the capacitor holes can be formed. The lower electrode layer is connected to the electrical contact portion. The sacrificial layers are then removed and a capacitor dielectric layer and an upper electrode layer are formed successively on the inner and outer surfaces of the lower electrode layer and on the surface of the supporting layers. This can increase capacitance value per unit area of the capacitor.

## Claims

### Claim 1

A capacitor formation method comprises:
providing a substrate, an electrical contact portion being formed on the substrate;
forming alternately stacked supporting layers and sacrificial layers on a surface of the substrate;
forming at least two capacitor holes penetrating the sacrificial layers and the supporting layers and exposing the electrical contact portion, wherein the at least two capacitor holes are provided on the same electrical contact portion;
forming a lower electrode layer covering an inner surface of the capacitor holes,
the lower electrode layer being connected to the electrical contact portion;
removing the sacrificial layers; and
forming a capacitor dielectric layer and an upper electrode layer successively on inner and outer surfaces of the lower electrode layer and on the surface of the supporting layers;
wherein forming the at least two capacitor holes comprises:
forming a mask layer on a surface of the alternately stacked supporting layers and sacrificial layers;
patterning the mask layer so that at least two openings are formed in the mask layer above the electrical contact portion;
etching the alternately stacked supporting layers and sacrificial layers to the surface of the electrical contact portion along the openings; and
forming the capacitor holes;
wherein patterning the mask layer comprises:
performing a doping process on the mask layer to form first portions and second portions arranged at intervals in the mask layer, the first portions and the second portions having different doping densities and with at least two first portions or two second portions in the mask layer above the electrical contact portion;
selectively removing first portions or second portions in the mask layer above the electrical contact portion; and
patterning the mask layer.

### Claim 2 (depends on 1)

The capacitor formation method according to claim 1, wherein patterning the mask layer comprises:
etching the mask layer and forming a concave portion in the mask layer, the concave portion located above the electrical contact portion;
performing doping process on the concave portion to form first portions and second portions arranged at intervals in the concave portion, the first portions and the second portions having different doping densities and with at least two first portions or two second portions in the concave portion; and
selectively removing first portions or second portions in the concave portion and patterning the mask layer.

### Claim 3 (depends on 2)

The capacitor formation method to claim 2, wherein the doping process includes adopting two tilted and opposite ion implantation processes.

### Claim 4 (depends on 3)

The capacitor formation method according to claim 3, wherein the tilt angle of the ion implantation processes ranges from 5 degrees to 45 degrees.

### Claim 5 (depends on 1)

The capacitor formation method according to claim 1, wherein forming the at least two capacitor holes comprises:
forming a first mask layer on the surface of the alternately stacked supporting layers and sacrificial layers, etching the first mask layer, and forming a concave portion in the first mask layer with the concave portion located above the electrical contact portion;
forming a second mask layer covering the inner surface of the concave portion and the surface of the first mask layer;
patterning the second mask layer;
forming at least two openings in the second mask layer at a bottom of the concave portion;
etching the alternately stacked supporting layers and sacrificial layers to the surface of the electrical contact portion along the openings; and
forming the capacitor holes.

### Claim 6 (depends on 5)

The capacitor formation method according to claim 5, wherein patterning the second mask layer comprises:
performing a doping process on the second mask layer to form first portions and second portions arranged at intervals in the second mask layer, the first portions and the second portions having different doping densities and with at least two first portions or two second portions in the second mask layer above the electrical contact portion; and
selectively removing first portions or second portions in the second mask layer; and patterning the second mask layer.

### Claim 7 (depends on 6)

The capacitor formation method according to claim 6, wherein the doping process includes adopting two tilted and opposite ion implantation processes.

### Claim 8 (depends on 7)

The capacitor formation method according to claim 7, wherein the tilt angle of the ion implantation processes ranges from 5 degrees to 45 degrees.

### Claim 9 (depends on 5)

The capacitor formation method according to claim 5, wherein the size of the concave portion is less than or equal to the size of the electrical contact portion.