# US 11,444,068 B2 · Three-dimensional (3D) integrated circuit device having a backside power delivery network

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- Number: US 11,444,068 B2
- Document ID: US11444068B2
- Status: Granted
- Kind: B2
- Application number: 16/928,939
- Filed: 2020-07-14
- Published: 2022-01-20
- Granted: 2022-09-13
- Earliest claimed: 2020-07-14
- Assignees: QUALCOMM Incorporated
- Applicants: QUALCOMM Incorporated
- Inventors: Stanley Seungchul Song; Jonghae Kim; Periannan Chidambaram; Pratyush Kamal
- Web page: https://patentgrep.com/patent/US11444068B2

## CPC

- H10W 72/00: Interconnections or connectors in packages
- H10W 90/00: Package configurations
- H10P 90/1916: {with separation or delamination along an ion implanted layer, e.g. Smart-cut}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10W 20/427: {Power or ground buses}
- H10W 20/481: {on the rear surfaces of the wafers or substrates}
- H10W 70/099: {Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers}
- H10W 80/00: Direct bonding of chips, wafers or substrates
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H10P 90/1922: {using silicon etch back techniques, e.g. BESOI or ELTRAN}
- H10W 72/01: {Manufacture or treatment}
- H10W 72/0198: {batch processes}
- H10W 72/941: {Dispositions of bond pads}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 80/211: {using auxiliary members, e.g. aids for protecting the bonding area}
- H10W 80/312: {characterised by the direct bonding of electrically conductive pads}
- H10W 80/327: {characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/792: {between multiple chips}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

An integrated circuit (IC) package is described. The IC package includes a power delivery network. The IC package also includes a first die having a first surface and a second surface, opposite the first surface. The second surface is on a first surface of the power delivery network. The IC package further includes a second die having a first surface on the first surface of the first die. The IC package also includes package bumps on a second surface of the power delivery network, opposite the first surface of the power delivery network. The package bumps are coupled to contact pads of the power delivery network.

## Claims

### Claim 1

An integrated circuit (IC) package, comprising:
a power delivery network comprising a bonding material layer as a first outer surface layer of the power delivery network, the power delivery network further comprising a second outer surface layer that is opposite the bonding material layer, the bonding material layer partially surrounding interconnects that are exposed to an active layer of a first die;
the first die having a first outer surface layer and the active layer as a second outer surface layer, opposite the first outer surface layer, the active layer directly on the bonding material layer and the interconnects of the power delivery network;
a second die having a first outer surface layer directly on the first outer surface layer of the first die; and
package bumps on the second outer surface layer of the power delivery network and coupled to contact pads of the power delivery network.

### Claim 2 (depends on 1)

The IC package of claim 1,
in which the first die comprises:
first active devices;
a first back-end-of-line (BEOL) metallization structure coupled to the first active devices; and
first contact pads in the first outer surface layer of the first die and coupled to the first BEOL metallization structure; and
in which the second die comprises:
second active devices;
a second BEOL metallization structure coupled to the second active devices; and
second contact pads in the first outer surface layer of the second die and coupled to the second BEOL metallization structure, in which the second contact pads of the second die are directly on the first contact pads of the first die.

### Claim 3 (depends on 1)

The IC package of claim 1, in which the power delivery network comprises:
an oxide layer as the second outer surface layer of the power delivery network, wherein the contact pads of the power delivery network are placed within the oxide layer.

### Claim 4 (depends on 1)

The IC package of claim 1, in which the first outer surface layer of the first die is directly bonded to the first outer surface layer of the second die.

### Claim 5 (depends on 1)

The IC package of claim 1, in which the first die comprises a logic die and the second die comprises a memory die.

### Claim 6 (depends on 1)

The IC package of claim 1, in which a first layer of the power delivery network comprises an oxide material.

### Claim 7 (depends on 1)

The IC package of claim 1, in which the package bumps comprise package solder balls coupled to the contact pads of the power delivery network.

### Claim 8

An integrated circuit (IC) package, comprising:
a power delivery network; comprising a bonding material layer as a first outer surface layer of the power delivery network, the power delivery network further comprising a second outer surface layer that is opposite the bonding material layer, the bonding material layer partially surrounding interconnects that are exposed to an active layer of a first die;
the first die having a first outer surface layer and the active layer as a second outer surface layer, opposite the first outer surface layer, the active layer directly on the bonding material layer and the interconnects of the power delivery network;
means for storing data having a first outer surface layer directly on the first outer surface layer of the first die; and
package bumps on the second outer surface layer of the power delivery network and coupled to contact pads of the power delivery network.

### Claim 9 (depends on 8)

The IC package of claim 8, in which a first layer of the power delivery network comprises an oxide material.

### Claim 10 (depends on 8)

The IC package of claim 8, in which the package bumps comprise package solder balls coupled to the contact pads of the power delivery network.