# US 11,444,054 B2 · Semiconductor element mounting structure, and combination of semiconductor element and substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,444,054 B2 - Document ID: US11444054B2 - Status: Granted - Kind: B2 - Application number: 16/646,642 - Filed: 2018-09-14 - Published: 2020-08-27 - Granted: 2022-09-13 - Earliest claimed: 2017-09-15 - Assignees: Showa Denko Materials Co., Ltd. - Applicants: Hitachi Chemical Company, Ltd. - Inventors: Hitoshi Onozeki; Shizu Fukuzumi; Naoya Suzuki; Toshihisa Nonaka - Web page: https://patentgrep.com/patent/US11444054B2 ## CPC - H10W 72/072: {of bump connectors} - H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps - H10W 72/01235: {by plating, e.g. electroless plating or electroplating} - H10W 72/07211: {Treating the bond pad before connecting, e.g. by applying flux or cleaning} - H10W 72/07236: {Soldering or alloying} - H10W 72/073: {of die-attach connectors} - H10W 72/222: {Multilayered bumps, e.g. a coating on top and side surfaces of a bump core} - H10W 72/225: {Bumps having a filler embedded in a matrix} - H10W 72/232: {Plan-view shape, i.e. in top view} - H10W 72/241: {Dispositions, e.g. layouts} - H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu} - H10W 72/29: Bond pads specially adapted therefor - H10W 72/325: {Die-attach connectors having a filler embedded in a matrix} - H10W 72/353: {not comprising solid metals or solid metalloids, e.g. ceramics} - H10W 72/354: {comprising polymers} - H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills - H10W 90/297: {characterised by the through-semiconductor vias [TSVs] in the stacked chips} - H10W 90/722: {between stacked chips} - H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Provided is a semiconductor element mounting structure, including: a semiconductor element including an element electrode, and a substrate including a substrate electrode that is provided on a surface facing the semiconductor element at a position facing the element electrode, the semiconductor element and the substrate being connected via the element electrode and the substrate electrode, in which: one of the element electrode or the substrate electrode is a first protruding electrode including a solder layer at a tip portion thereof, the other of the element electrode or the substrate electrode is a first electrode pad including one or more metal protrusions on a surface thereof, the one or more metal protrusions of the first electrode pad extend into the solder layer of the first protruding electrode, and a bottom area of each of the one or more metal protrusions of the first electrode pad is 70% or less with respect to an area of the first electrode pad, or 75% or less with respect to a maximum cross-sectional area of the solder layer of the first protruding electrode. ## Claims ### Claim 1 A semiconductor element mounting structure, comprising: a semiconductor element comprising an element electrode, and a substrate comprising a substrate electrode that is provided on a surface facing the semiconductor element at a position facing the element electrode, the semiconductor element and the substrate being connected via the element electrode and the substrate electrode, wherein: one of the element electrode or the substrate electrode is a first protruding electrode comprising a solder layer at a tip portion thereof, the other of the element electrode or the substrate electrode is a first electrode pad comprising one or more metal protrusions on a surface thereof, the one or more metal protrusions of the first electrode pad extend into the solder layer of the first protruding electrode, and a bottom area of each of the one or more metal protrusions of the first electrode pad is 70% or less with respect to a maximum cross-sectional area of the solder layer of the first protruding electrode; and at least one further semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate, the at least one further semiconductor element being layered in a state such that each semiconductor element is connected via an element electrode, wherein: one of an element electrode of the semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate or an element electrode of the other further semiconductor element is a second protruding electrode comprising a solder layer at a tip portion thereof, the other of the element electrode of the semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate or the element electrode of the other further semiconductor element is a second electrode pad comprising one or more metal protrusions on a surface thereof, the one or more metal protrusions of the second electrode pad extend into the solder layer of the second protruding electrode, and a bottom area of each of the one or more metal protrusions of the second electrode pad is 70% or less with respect to a maximum cross-sectional area of the solder layer of the second protruding electrode. ### Claim 2 (depends on 1) The semiconductor element mounting structure according to claim 1, wherein a shape of each of the one or more metal protrusions is a cylindrical column or a rectangular parallelepiped. ### Claim 3 (depends on 1) The semiconductor element mounting structure according to claim 1, wherein each of the one or more metal protrusions has a shape wherein at least two cylindrical columns or rectangular parallelepipeds are stacked in a height direction. ### Claim 4 (depends on 1) The semiconductor element mounting structure according to claim 1, wherein each of the one or more metal protrusions is photolithographically formed. ### Claim 5 (depends on 1) The semiconductor element mounting structure according to claim 1, obtained by temporarily fixing the semiconductor element and the substrate in a state wherein at least a portion of the one or more metal protrusions of the first electrode pad is extended into the solder layer of the first protruding electrode by pressurization, and melting the solder layer of the first protruding electrode by heating to connect the element electrode and the substrate electrode. ### Claim 6 (depends on 1) The semiconductor element mounting structure according to claim 1, wherein the bottom area of each of the one or more metal protrusions of the first electrode pad is 50% or less with respect to a maximum cross-sectional area of the solder layer of the first protruding electrode, and the bottom area of each of the one or more metal protrusions of the second electrode pad is 50% or less with respect to a maximum cross-sectional area of the solder layer of the second protruding electrode. ### Claim 7 (depends on 1) The semiconductor element mounting structure according to claim 1, wherein the bottom area of each of the one or more metal protrusions of the first electrode pad is 10% or more with respect to a maximum cross-sectional area of the solder layer of the second protruding electrode, and the bottom area of each of the one or more metal protrusions of the second electrode pad is 10% or more with respect to a maximum cross-sectional area of the solder layer of the second protruding electrode. ### Claim 8 A combination of a semiconductor element and a substrate, comprising: the semiconductor element comprising an element electrode, and the substrate comprising a substrate electrode that is provided on a surface facing the semiconductor element at a position facing the element electrode, wherein: one of the element electrode or the substrate electrode is a protruding electrode comprising a solder layer at a tip portion thereof, the other of the element electrode or the substrate electrode is an electrode pad comprising one or more metal protrusions on a surface thereof, and a bottom area of each of the one or more metal protrusions is 70% or less with respect to a maximum cross-sectional area of the solder layer of the protruding electrode; and at least one further semiconductor element provided facing the semiconductor element at an opposite side of the semiconductor element from the side facing the substrate, wherein: one of an element electrode of the semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate or an element electrode of the other further semiconductor element is a second protruding electrode comprising a solder layer at a tip portion thereof, the other of the element electrode of the semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate or the element electrode of the other further semiconductor element is a second electrode pad comprising one or more metal protrusions on a surface thereof, and a bottom area of each of the one or more metal protrusions of the second electrode pad is 70% or less with respect to a maximum cross-sectional area of the solder layer of the second protruding electrode. ### Claim 9 (depends on 8) The combination of a semiconductor element and a substrate according to claim 8, wherein the bottom area of each of the one or more metal protrusions is 50% or less with respect to a maximum cross-sectional area of the solder layer of the protruding electrode, and the bottom area of each of the one or more metal protrusions of the second electrode pad is 50% or less with respect to a maximum cross-sectional area of the solder layer of the second protruding electrode. ### Claim 10 (depends on 8) The combination of a semiconductor element and a substrate according to claim 8, wherein the bottom area of each of the one or more metal protrusions is 10% or more with respect to a maximum cross-sectional area of the solder layer of the protruding electrode, and the bottom area of each of the one or more metal protrusions of the second electrode pad is 10% or more with respect to a maximum cross-sectional area of the solder layer of the second protruding electrode. ### Claim 11 A semiconductor element mounting structure, comprising: a semiconductor element comprising an element electrode, and a substrate comprising a substrate electrode that is provided on a surface facing the semiconductor element at a position facing the element electrode, the semiconductor element and the substrate being connected via the element electrode and the substrate electrode, wherein: one of the element electrode or the substrate electrode is a first protruding electrode comprising a solder layer at a tip portion thereof, the other of the element electrode or the substrate electrode is a first electrode pad comprising one or more metal protrusions on a surface thereof, the one or more metal protrusions of the first electrode pad extend into the solder layer of the first protruding electrode, and a bottom area of each of the one or more metal protrusions of the first electrode pad is 70% or less with respect to an area of the first electrode pad; and and at least one further semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate, the at least one further semiconductor element being layered in a state such that each semiconductor element is connected via an element electrode, wherein: one of an element electrode of the semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate or an element electrode of the other further semiconductor element is a second protruding electrode comprising a solder layer at a tip portion thereof, the other of the element electrode of the semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate or the element electrode of the other further semiconductor element is a second electrode pad comprising one or more metal protrusions on a surface thereof, the one or more metal protrusions of the second electrode pad extend into the solder layer of the second protruding electrode, and a bottom area of each of the one or more metal protrusions of the second electrode pad is 70% or less with respect to an area of the second electrode pad. ### Claim 12 (depends on 11) The semiconductor element mounting structure according to claim 11, wherein a shape of each of the one or more metal protrusions is a cylindrical column or a rectangular parallelepiped. ### Claim 13 (depends on 11) The semiconductor element mounting structure according to claim 11, wherein each of the one or more metal protrusions has a shape wherein at least two cylindrical columns or rectangular parallelepipeds are stacked in a height direction. ### Claim 14 (depends on 11) The semiconductor element mounting structure according to claim 11, wherein each of the one or more metal protrusions is photolithographically formed. ### Claim 15 (depends on 11) The semiconductor element mounting structure according to claim 11, obtained by temporarily fixing the semiconductor element and the substrate in a state wherein at least a portion of the one or more metal protrusions of the first electrode pad is extended into the solder layer of the first protruding electrode by pressurization, and melting the solder layer of the first protruding electrode by heating to connect the element electrode and the substrate electrode. ### Claim 16 (depends on 11) The semiconductor element mounting structure according to claim 11, wherein the bottom area of each of the one or more metal protrusions of the first electrode pad is 50% or less with respect to an area of the first electrode pad, and the bottom area of each of the one or more metal protrusions of the second electrode pad is 50% or less with respect to an area of the second electrode pad. ### Claim 17 (depends on 11) The semiconductor element mounting structure according to claim 11, wherein the bottom area of each of the one or more metal protrusions of the first electrode pad is 10% or more with respect to an area of the first electrode pad, and the bottom area of each of the one or more metal protrusions of the second electrode pad is 10% or more with respect to an area of the second electrode pad. ### Claim 18 A combination of a semiconductor element and a substrate, comprising: the semiconductor element comprising an element electrode, and the substrate comprising a substrate electrode that is provided on a surface facing the semiconductor element at a position facing the element electrode, wherein: one of the element electrode or the substrate electrode is a protruding electrode comprising a solder layer at a tip portion thereof, the other of the element electrode or the substrate electrode is an electrode pad comprising one or more metal protrusions on a surface thereof, and a bottom area of each of the one or more metal protrusions is 70% or less with respect to an area of the electrode pad; and at least one further semiconductor element provided facing the semiconductor element at an opposite side of the semiconductor element from the side facing the substrate, wherein: one of an element electrode of the semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate or an element electrode of the other further semiconductor element is a second protruding electrode comprising a solder layer at a tip portion thereof, the other of the element electrode of the semiconductor element provided at an opposite side of the semiconductor element from the side facing the substrate or the element electrode of the other further semiconductor element is a second electrode pad comprising one or more metal protrusions on a surface thereof, and a bottom area of each of the one or more metal protrusions of the second electrode pad is 70% or less with respect to an area of the second electrode pad. ### Claim 19 (depends on 18) The combination of a semiconductor element and a substrate according to claim 18, wherein the bottom area of each of the one or more metal protrusions is 50% or less with respect to an area of the electrode pad, and the bottom area of each of the one or more metal protrusions of the second electrode pad is 50% or less with respect to an area of the second electrode pad. ### Claim 20 (depends on 18) The combination of a semiconductor element and a substrate according to claim 18, wherein the bottom area of each of the one or more metal protrusions is 10% or more with respect to an area of the electrode pad, and the bottom area of each of the one or more metal protrusions of the second electrode pad is 10% or more with respect to an area of the second electrode pad.