# US 11,444,047 B2 · Semiconductor device

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- Number: US 11,444,047 B2
- Document ID: US11444047B2
- Status: Granted
- Kind: B2
- Application number: 16/810,978
- Filed: 2020-03-06
- Published: 2020-10-01
- Granted: 2022-09-13
- Earliest claimed: 2019-03-29
- Assignees: Denso Corporation
- Applicants: Denso Corporation
- Inventors: Takanori Kawashima
- Web page: https://patentgrep.com/patent/US11444047B2

## CPC

- H10W 40/778: {in encapsulations}
- H10W 74/111: {the semiconductor body being completely enclosed}
- H10W 70/424: {Cross-sectional shapes (H10W70/481 takes precedence)}
- H10W 72/07334: {Using a reflow oven}
- H10W 72/07336: {Soldering or alloying}
- H10W 72/07354: {changes in dispositions}
- H10W 72/07636: {Soldering or alloying}
- H10W 72/07653: {changes in shapes}
- H10W 72/234: {Cross-sectional shape, i.e. in side view}
- H10W 72/347: {Dispositions of multiple die-attach connectors}
- H10W 72/352: {comprising metals or metalloids, e.g. solders}
- H10W 72/631: {Shapes of strap connectors}
- H10W 72/646: {the connected ends being on auxiliary connecting means on bond pads, e.g. on a bump connector}
- H10W 72/652: {comprising metals or metalloids, e.g. silver}
- H10W 72/868: {Die-attach connectors and strap connectors}
- H10W 72/886: {Die-attach connectors and strap connectors}
- H10W 72/926: {Multiple bond pads having different sizes}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 90/726: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/761: {of strap connectors}
- H10W 99/00: Subject matter not provided for in other groups of this subclass
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device disclosed herein may include: a semiconductor element including an electrode on a surface of the semiconductor element; and a terminal bonded to the electrode via a bonding material, wherein the electrode may include a protrusion portion that protrudes toward the terminal and is in contact with the bonding material.

## Claims

### Claim 1

A semiconductor device comprising:
a semiconductor element comprising a first main surface, a first electrode on the first main surface, and a second electrode on the first main surface, a surface of the second electrode being smaller than a surface of the first electrode;
a first conductor plate bonded to the surface of the first electrode via a first bonding material; and
a terminal bonded to the surface of the second electrode via a second bonding material,
wherein
the second electrode comprises a protrusion portion on the surface of the second electrode that protrudes toward the terminal and is in contact with the second bonding material, and
a distance between the protrusion portion and the terminal is smaller than a distance between the first electrode and the first conductor plate.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein an entirety of the protrusion portion is included within a projection area on which an area of the terminal that is in contact with the second bonding material is projected.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein an entirety of the electrode is included within a projection area on which an area of the terminal that is in contact with the second bonding material is projected.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein
the terminal comprises a concave portion opposed to the protrusion portion of the electrode, and
the second bonding material is in contact with an inner surface of the concave portion.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein
the terminal comprises a convex portion opposed to the protrusion portion of the second electrode, and
the second bonding material is in contact with a top surface of the convex portion.

### Claim 6 (depends on 5)

The semiconductor device according to claim 5, wherein an entirety of the protrusion portion is included within a projection area on which the top surface of the convex portion is projected.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, wherein a material constituting the protrusion portion has a melting point higher than that of a material constituting the second bonding material.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1, wherein a material constituting the protrusion portion is different from a material constituting the second electrode.

### Claim 9 (depends on 1)

The semiconductor device according to claim 1, wherein the protrusion portion has a porous structure.

### Claim 10 (depends on 1)

The semiconductor device according to claim 1, wherein a height of the protrusion portion is 100 μm or more.

### Claim 11 (depends on 1)

The semiconductor device according to claim 1, further comprising an encapsulant that encapsulates the semiconductor element,
wherein the terminal is bonded to the second electrode via the second bonding material within the encapsulant.

### Claim 12 (depends on 1)

The semiconductor device according to claim 1, wherein
the terminal comprises a surface opposed to the first main surface of the semiconductor element, the surface of the terminal comprising a flat surface and a concave portion depressed with respect to the flat surface, and
the second bonding material is in contact with an inner surface of the concave portion and is not in contact with the flat surface.

### Claim 13 (depends on 1)

The semiconductor device according to claim 1, wherein
the terminal comprises a surface opposed to the first main surface of the semiconductor element, the surface comprising a flat surface and a convex portion protruding with respect to the flat surface,
the convex portion comprises a top surface and a side surface extending from the top surface to the flat surface, and
the second bonding material is in contact with the top surface of the convex portion and is not in contact with the side surface.

### Claim 14 (depends on 13)

The semiconductor device according to claim 13, wherein an entirety of the protrusion portion is included within a projection area on which the top surface of the convex portion is projected.

### Claim 15 (depends on 1)

The semiconductor device according to claim 1, further comprising:
an encapsulant encapsulating the semiconductor element; and
a second conductor plate located to face the first conductor plate across the semiconductor element,
wherein
the semiconductor element further comprises a second main surface opposite to the first main surface and a third electrode located on the second main surface, the third electrode being bonded to the second conductor plate,
the first conductor plate comprises a first inner surface bonded to the first electrode via the first bonding material within the encapsulant, and a first outer surface opposite to the inner surface and exposed to outside of the encapsulant, and
the second conductor plate comprises a second inner surface bonded to the third electrode via a third bonding material within the encapsulant, and a second outer surface opposite to the second inner surface and exposed to the outside of the encapsulant.