# US 11,444,035 B2 · Semiconductor device with partial EMI shielding removal using laser ablation

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- Number: US 11,444,035 B2
- Document ID: US11444035B2
- Status: Granted
- Kind: B2
- Application number: 16/991,370
- Filed: 2020-08-12
- Published: 2020-11-26
- Granted: 2022-09-13
- Earliest claimed: 2018-12-27
- Assignees: STATS ChipPAC Pte. Ltd.
- Applicants: STATS ChipPAC Pte. Ltd.
- Inventors: ChangOh Kim; KyoWang Koo; SungWon Cho; BongWoo Choi; JiWon Lee
- Web page: https://patentgrep.com/patent/US11444035B2

## CPC

- H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
- H10W 42/273: {the arrangements being between laterally adjacent chips, e.g. walls between chips}
- H10W 42/276: {the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation}
- H10W 44/20: at high-frequency [HF] or radio frequency [RF]
- H10W 72/0198: {batch processes}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 74/01: Manufacture or treatment
- H10W 90/00: Package configurations
- H10W 44/248: {for antennas}
- H10W 72/07235: {Applying EM radiation, e.g. induction heating or using a laser}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/59: Bond pads specially adapted therefor
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 74/014: {using batch processing}
- H10W 74/117: {the substrate having spherical bumps for external connection}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/726: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device has a substrate. A first component and second component are disposed over the substrate. The first component includes an antenna. A lid is disposed over the substrate between the first component and second component. An encapsulant is deposited over the substrate and lid. A conductive layer is formed over the encapsulant and in contact with the lid. A first portion of the conductive layer over the first component is removed using laser ablation.

## Claims

### Claim 1

A method of making a semiconductor device, comprising:
providing a semiconductor package comprising an encapsulant and an electromagnetic interference (EMI) shield exposed from the encapsulant;
forming a conductive layer over the encapsulant and in contact with the EMI shield;
removing a first portion of the conductive layer using a first laser ablation process; and
removing a second portion of the conductive layer using a second laser ablation process.

### Claim 2 (depends on 1)

The method of claim 1, wherein the first portion of the conductive layer is removed over a first surface of the semiconductor package and the second portion of the conductive layer is removed over a second surface of the semiconductor package different from the first surface.

### Claim 3 (depends on 2)

The method of claim 2, wherein the first laser ablation process and second laser ablation process each occur with a laser oriented perpendicular to the first surface and parallel to the second surface.

### Claim 4 (depends on 1)

The method of claim 1, wherein the first laser ablation process occurs simultaneously with the second laser ablation process.

### Claim 5 (depends on 1)

The method of claim 1, further including rotating the semiconductor package after the first laser ablation process and before the second laser ablation process.

### Claim 6 (depends on 1)

The method of claim 1, wherein the second laser ablation process uses a mirror to reflect a laser.

### Claim 7

A method of making a semiconductor device, comprising:
providing a semiconductor package;
forming a conductive layer over the semiconductor package;
removing a first portion of the conductive layer using a first laser ablation process; and
removing a second portion of the conductive layer using a second laser ablation process.

### Claim 8 (depends on 7)

The method of claim 7, wherein the first portion of the conductive layer is removed over a first surface of the semiconductor package and the second portion of the conductive layer is removed over a second surface of the semiconductor package different from the first surface.

### Claim 9 (depends on 8)

The method of claim 8, wherein the first laser ablation process and second laser ablation process each occur with a laser oriented perpendicular to the first surface and parallel to the second surface.

### Claim 10 (depends on 7)

The method of claim 7, wherein the first laser ablation process occurs simultaneously with the second laser ablation process.

### Claim 11 (depends on 7)

The method of claim 7, further including rotating the semiconductor package after the first laser ablation process and before the second laser ablation process.

### Claim 12 (depends on 7)

The method of claim 7, wherein the second laser ablation process uses a mirror to reflect a laser.

### Claim 13 (depends on 7)

The method of claim 7, wherein the semiconductor package includes an electromagnetic interference (EMI) shield in contact with the conductive layer.

### Claim 14

A method of making a semiconductor device, comprising:
providing a semiconductor package comprising an encapsulant and an electromagnetic interference (EMI) shield exposed from the encapsulant;
forming a conductive layer over the encapsulant and in contact with the EMI shield;
removing a first portion of the conductive layer using laser ablation; and
removing a second portion of the conductive layer using laser ablation.

### Claim 15 (depends on 14)

The method of claim 14, wherein the first portion of the conductive layer is removed over a first surface of the semiconductor package and the second portion of the conductive layer is removed over a second surface of the semiconductor package different from the first surface.

### Claim 16 (depends on 15)

The method of claim 15, wherein the first portion of the conductive layer and second portion of the conductive layer are each removed using a laser oriented perpendicular to the first surface and parallel to the second surface.

### Claim 17 (depends on 14)

The method of claim 14, further including removing the first portion of the conductive layer simultaneously with removing the second portion of the conductive layer.

### Claim 18 (depends on 14)

The method of claim 14, further including rotating the semiconductor package after removing the first portion of the conductive layer and before removing the second portion of the conductive layer.

### Claim 19 (depends on 14)

The method of claim 14, wherein using laser ablation includes using a mirror to reflect a laser.

### Claim 20

A method of making a semiconductor device, comprising:
providing a semiconductor package;
forming a conductive layer over the semiconductor package;
removing a first portion of the conductive layer using laser ablation; and
removing a second portion of the conductive layer using laser ablation.

### Claim 21 (depends on 20)

The method of claim 20, wherein the first portion of the conductive layer is removed over a first surface of the semiconductor package and the second portion of the conductive layer is removed over a second surface of the semiconductor package different from the first surface.

### Claim 22 (depends on 21)

The method of claim 21, wherein the first portion of the conductive layer and second portion of the conductive layer are each removed using a laser oriented perpendicular to the first surface and parallel to the second surface.

### Claim 23 (depends on 20)

The method of claim 20, further including removing the first portion of the conductive layer simultaneously with removing the second portion of the conductive layer.

### Claim 24 (depends on 20)

The method of claim 20, further including rotating the semiconductor package after removing the first portion of the conductive layer and before removing the second portion of the conductive layer.

### Claim 25 (depends on 20)

The method of claim 20, wherein using laser ablation includes using a mirror to reflect a laser.