# US 11,444,028 B2 · Contact structure and formation thereof

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- Number: US 11,444,028 B2
- Document ID: US11444028B2
- Status: Granted
- Kind: B2
- Application number: 16/716,441
- Filed: 2019-12-16
- Published: 2020-04-16
- Granted: 2022-09-13
- Earliest claimed: 2013-11-27
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company Limited
- Inventors: Hong-Mao Lee; Huicheng Chang; Chia-Han Lai; Chi-Hsuan Ni; Cheng-Tung Lin; Huang-Yi Huang; Chi-Yuan Chen; Li-Ting Wang; Teng-Chun Tsai; Wei-Jung Lin
- Web page: https://patentgrep.com/patent/US11444028B2

## CPC

- H10W 20/4403: {based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence)}
- H10D 64/0112: {using conductive layers comprising silicides}
- H10D 64/01125: {the silicides being formed by chemical reaction with the semiconductor after the contact hole formation}
- H10W 20/033: {in openings in dielectrics}
- H10W 20/0526: {by thermal treatment thereof}
- H10W 20/055: {by formation methods other than physical vapour deposition [PVD], chemical vapour deposition [CVD] or liquid deposition}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10W 20/40: Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W 20/42: Vias, e.g. via plugs
- H10W 20/425: {Barrier, adhesion or liner layers}
- H10W 20/43: Layouts of interconnections
- H10W 20/047: {by introducing additional elements therein}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device and methods of formation are provided. A semiconductor device includes an annealed cobalt plug over a silicide in a first opening of the semiconductor device, wherein the annealed cobalt plug has a repaired lattice structure. The annealed cobalt plug is formed by annealing a cobalt plug at a first temperature for a first duration, while exposing the cobalt plug to a first gas. The repaired lattice structure of the annealed cobalt plug is more regular or homogenized as compared to a cobalt plug that is not so annealed, such that the annealed cobalt plug has a relatively increased conductivity or reduced resistivity.

## Claims

### Claim 1

A semiconductor device, comprising:
a silicide;
a dielectric layer;
a glue layer in contact with a first sidewall of the dielectric layer, a second sidewall of the dielectric layer, and a top surface of the silicide;
a metal layer laterally co-planar with the glue layer, wherein the glue layer is spaced apart from the metal layer; and
a cobalt plug over the silicide, wherein:
the glue layer is between the silicide and the cobalt plug, and
the cobalt plug has a different composition than the metal layer.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the glue layer is a titanium nitride layer.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the dielectric layer overlies the silicide.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein the cobalt plug is in contact with the glue layer.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the dielectric layer is in contact with the top surface of the silicide.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, wherein the dielectric layer is between the silicide and the glue layer.

### Claim 7 (depends on 1)

The semiconductor device of claim 1, wherein the silicide is disposed within a substrate and the dielectric layer overlies the substrate.

### Claim 8 (depends on 1)

The semiconductor device of claim 1, wherein the silicide comprises nickel.

### Claim 9 (depends on 1)

The semiconductor device of claim 1, wherein the dielectric layer is between the metal layer and the glue layer.

### Claim 10

A semiconductor device, comprising:
a silicide;
a metal layer;
a first dielectric layer overlying the silicide;
a glue layer overlying the silicide and between a first portion of the first dielectric layer and a second portion of the first dielectric layer, wherein the first dielectric layer is between the metal layer and the glue layer; and
a cobalt plug over the silicide, wherein:
the glue layer is between the silicide and the cobalt plug, and
the cobalt plug has a different composition than the metal layer.

### Claim 11 (depends on 10)

The semiconductor device of claim 10, comprising:
a second dielectric layer, wherein the metal layer is between the first dielectric layer and the second dielectric layer.

### Claim 12 (depends on 10)

The semiconductor device of claim 10, wherein the metal layer contacts the silicide.

### Claim 13 (depends on 10)

The semiconductor device of claim 10, wherein the glue layer contacts the silicide.

### Claim 14 (depends on 10)

The semiconductor device of claim 10, wherein the silicide comprises nickel.

### Claim 15

A semiconductor device, comprising:
a silicide;
a metal layer overlying the silicide;
a dielectric layer;
a glue layer overlying the silicide, wherein:
the glue layer is in contact with a sidewall of the dielectric layer, and
the glue layer is spaced apart from the metal layer; and
a cobalt plug overlying the silicide, wherein:
the glue layer is between the silicide and the cobalt plug, and
the glue layer is between the metal layer and the cobalt plug.

### Claim 16 (depends on 15)

The semiconductor device of claim 15, wherein the glue layer is in contact with a top surface of the silicide.

### Claim 17 (depends on 15)

The semiconductor device of claim 15, wherein the glue layer contacts a top surface of the dielectric layer.

### Claim 18 (depends on 15)

The semiconductor device of claim 15, wherein a width of the silicide is greater than a width of a portion of the glue layer between a first portion of the dielectric layer and a second portion of the dielectric layer.

### Claim 19 (depends on 15)

The semiconductor device of claim 15, wherein the metal layer is in contact with a surface of the silicide.

### Claim 20 (depends on 15)

The semiconductor device of claim 15, wherein:
the glue layer, the dielectric layer, and the metal layer are in contact with a top surface of the silicide.