# US 11,443,978 B2 · Method for transfer of a thin layer of silicon > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,443,978 B2 - Document ID: US11443978B2 - Status: Granted - Kind: B2 - Application number: 17/024,879 - Filed: 2020-09-18 - Published: 2021-01-07 - Granted: 2022-09-13 - Earliest claimed: 2018-06-08 - Assignees: GlobalWafers Co., Ltd. - Applicants: GlobalWafers Co. Ltd. - Inventors: Gaurab Samanta; Salvador Zepeda - Web page: https://patentgrep.com/patent/US11443978B2 ## CPC - H10P 90/1916: {with separation or delamination along an ion implanted layer, e.g. Smart-cut} - H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A method for preparing semiconductor on insulator structures comprises transferring a thin layer of silicon from a donor substrate onto a handle substrate. ## Claims ### Claim 1 A method of transferring a silicon layer from a single crystal silicon donor substrate to a handle substrate, the method comprising: (a) implanting H2+ ions, H+ ions, or a combination of H2+ ions and H+ ions through a silicon dioxide layer in contact with a front surface of the single crystal silicon donor substrate and through the front surface of the single crystal silicon donor substrate, the single crystal silicon donor substrate comprising two major, parallel surfaces one of which is the front surface and one of which is the back surface, a circumferential edge joining the front surface and the back surface, a central plane between the front surface and the back surface, a central axis perpendicular to the front surface, and a bulk region between the front surface and the back surface, wherein the H2+ ions are implanted at an implant energy between about 10 Kev and about 30 Kev and the H+ ions are implanted at an implant energy between about 5 Kev and about 20 Kev, wherein a peak density, (D1), of H2+ ions, H+ ions, or a combination of H2+ ions and H+ ions is between about 100 Angstroms and about 3000 Angstroms as measured from the front surface of the single crystal silicon donor substrate and along the central axis; (b) implanting He+ ions through the silicon dioxide layer in contact with the front surface of a single crystal silicon donor substrate and through the front surface of the single crystal silicon donor substrate, wherein the He+ ions are implanted at an implant energy between about 5 Kev and about 30 Kev, wherein a peak density, (D2), of He+ ions is between about 100 Angstroms and about 3000 Angstroms as measured from the front surface of the single crystal silicon donor substrate and along the central axis and further wherein the peak density, (D1), of H2+ ions, H+ ions, or a combination of H2+ ions and H+ ions and the peak density, (D2), of He+ ions are within about 450 Angstroms of each other; (c) annealing the ion implanted single crystal silicon donor substrate at a temperature between about 200° C. and about 350° C. and for a duration sufficient to form a damage layer in the single crystal silicon donor substrate; (d) bonding the silicon dioxide layer in contact with the front surface of the single crystal silicon donor substrate to a dielectric layer in contact with the handle substrate to thereby prepare the multilayer substrate; (e) annealing the multilayer substrate at a temperature between about 200° C. and about 400° C. and for a duration sufficient to thermally activate the damage layer; and (f) cleaving the annealed multilayer substrate at the damage layer in the single crystal silicon donor substrate to thereby transfer the silicon layer having a thickness between about 500 Angstroms and about 2500 Angstroms from the single crystal silicon donor substrate to the handle substrate. ### Claim 2 (depends on 1) The method of claim 1 wherein step (a) occurs before step (b). ### Claim 3 (depends on 1) The method of claim 1 wherein step (b) occurs before step (a). ### Claim 4 (depends on 1) The method of claim 1 wherein steps (a) and (b) occur simultaneously. ### Claim 5 (depends on 1) The method of claim 1 wherein step (a) comprises (i) implanting H2+ ions at a dosage between about 4.3×1015 ions/cm2 and about 1.1×1016 ions/cm2 at an implant energy between about 10 Kev and about 30 Kev, (ii) implanting H+ ions at a dosage between about 5×1015 ions/cm2 and about 2×1016 ions/cm2 at an implant energy between about 5 Kev and about 20 Kev, or (iii) implanting H2+ ions at a dosage between about 4.3×1015 ions/cm2 and about 1.1×1016 ions/cm2 at an implant energy between about 10 Kev and about 30 Kev and implanting H+ ions at a dosage between about 5×1015 ions/cm2 and about 2×1016 ions/cm2 at an implant energy between about 5 Kev and about 20 Kev. ### Claim 6 (depends on 1) The method of claim 1 wherein step (a) comprises (i) implanting H2+ ions at a dosage between about 4.3×1015 ions/cm2 and about 1.1×1016 ions/cm2 at an implant energy between about 10 Kev and about 30 Kev, (ii) implanting H+ ions at a dosage between about 1.1×1016 ions/cm2 and about 2×1016 ions/cm2 at an implant energy between about 5 Kev and about 20 Kev, or (iii) implanting H2+ ions at a dosage between about 4.3×1015 ions/cm2 and about 1.1×1016 ions/cm2 at an implant energy between about 10 Kev and about 30 Kev and implanting H+ ions at a dosage between about 1.1×1016 ions/cm2 and about 2×1016 ions/cm2 at an implant energy between about 5 Kev and about 20 Kev. ### Claim 7 (depends on 1) The method of claim 1 wherein step (a) comprises (i) implanting H2+ ions at a dosage between about 5.9×1015 ions/cm2 and about 6.7×1015 ions/cm2 at an implant energy between about 10 Kev and about 30 Kev, (ii) implanting H+ ions at a dosage between about 6.1×1015 ions/cm2 and about 6.8×1015 ions/cm2 at an implant energy between about 5 Kev and about 20 Kev, or (iii) implanting H2+ ions at a dosage between about 5.9×1015 ions/cm2 and about 6.7×1015 ions/cm2 at an implant energy between about 10 Kev and about 30 Kev and implanting H+ ions at a dosage between about 6.1×1015 ions/cm2 and about 6.8×1015 ions/cm2 at an implant energy between about 5 Kev and about 20 Kev. ### Claim 8 (depends on 1) The method of claim 1 wherein step (b) comprises implanting He+ ions at a dosage between about 6×1015 ions/cm2 and about 8×1015 ions/cm2 at an implant energy between about 5 Kev and about 30 Kev. ### Claim 9 (depends on 1) The method of claim 1 wherein step (b) comprises implanting He+ ions at a dosage between about 6×1015 ions/cm2 and about 8×1015 ions/cm2 at an implant energy between about 10 Kev and about 30 Kev. ### Claim 10 (depends on 1) The method of claim 1 wherein step (b) comprises implanting He+ ions at a dosage between about 6.6×1015 ions/cm2 and about 7×1015 ions/cm2 at an implant energy between about 5 Kev and about 20 Kev. ### Claim 11 (depends on 1) The method of claim 1 wherein a peak density, (D1), of H2+ ions, H+ ions, or a combination of H2+ ions and H+ ions is between about 500 Angstroms and about 2500 Angstroms, as measured from the front surface of the single crystal silicon donor substrate and along the central axis. ### Claim 12 (depends on 1) The method of claim 1 wherein a peak density, (D2), of He+ ions is between about 500 Angstroms and about 3000 Angstroms, as measured from the front surface of the single crystal silicon donor substrate and along the central axis. ### Claim 13 (depends on 1) The method of claim 1 wherein the peak density, (D1), of H2+ ions, H+ ions, or a combination of H2+ ions and H+ ions and the peak density, (D2), of He+ ions are within about 400 Angstroms of each other. ### Claim 14 (depends on 1) The method of claim 1 wherein the peak density, (D1), of H2+ ions, H+ ions, or a combination of H2+ ions and H+ ions and the peak density, (D2), of He+ ions are within about 200 Angstroms of each other. ### Claim 15 (depends on 1) The method of claim 1 wherein step (c) comprises annealing the ion implanted single crystal silicon donor substrate at a temperature between about 250° C. and about 300° C. for a duration between 10 minutes and 60 minutes. ### Claim 16 (depends on 1) The method of claim 1 wherein step (e) comprises annealing the multilayer substrate at a temperature between about 300° C. and about 400° C. for a duration between 10 minutes and 60 minutes. ### Claim 17 (depends on 1) The method of claim 1 wherein the silicon layer having the thickness between about 500 Angstroms and about 2500 Angstroms transferred from the single crystal silicon donor substrate to the handle substrate has a thickness variation less than about 10 Angstroms. ### Claim 18 A method of transferring a silicon layer from a single crystal silicon donor substrate to a handle substrate, the method comprising: (a) implanting H+ ions through a silicon dioxide layer in contact with a front surface of the single crystal silicon donor substrate and through the front surface of the single crystal silicon donor substrate, the single crystal silicon donor substrate comprising two major, parallel surfaces one of which is the front surface and one of which is the back surface, a circumferential edge joining the front surface and the back surface, a central plane between the front surface and the back surface, a central axis perpendicular to the front surface, and a bulk region between the front surface and the back surface, wherein the H+ ions are implanted at an implant energy between about 5 Kev and about 20 Kev, wherein a peak density, (D1), of H+ ions is between about 100 Angstroms and about 3000 Angstroms as measured from the front surface of the single crystal silicon donor substrate and along the central axis; (b) implanting He+ ions through the silicon dioxide layer in contact with the front surface of a single crystal silicon donor substrate and through the front surface of the single crystal silicon donor substrate, wherein the He+ ions are implanted at an implant energy between about 5 Kev and about 30 Kev, wherein a peak density, (D2), of He+ ions is between about 100 Angstroms and about 3000 Angstroms as measured from the front surface of the single crystal silicon donor substrate and along the central axis and further wherein the peak density, (D1), of H+ ions and the peak density, (D2), of He+ ions are within about 450 Angstroms of each other; (c) annealing the ion implanted single crystal silicon donor substrate at a temperature between about 200° C. and about 350° C. and for a duration sufficient to form a damage layer in the single crystal silicon donor substrate; (d) bonding the silicon dioxide layer in contact with the front surface of the single crystal silicon donor substrate to a dielectric layer in contact with the handle substrate to thereby prepare the multilayer substrate; (e) annealing the multilayer substrate at a temperature between about 200° C. and about 400° C. and for a duration sufficient to thermally activate the damage layer; and cleaving the annealed multilayer substrate at the damage layer in the single crystal silicon donor substrate to thereby transfer the silicon layer having a thickness between about 500 Angstroms and about 2500 Angstroms from the single crystal silicon donor substrate to the handle substrate. ### Claim 19 (depends on 18) The method of claim 18 wherein step (a) occurs before step (b). ### Claim 20 (depends on 18) The method of claim 18 wherein step (b) occurs before step (a). ### Claim 21 (depends on 18) The method of claim 18 wherein steps (a) and (b) occur simultaneously. ### Claim 22 (depends on 18) The method of claim 18 wherein step (a) comprises implanting H+ ions at a dosage between about 5×1015 ions/cm2 and about 2×1016 ions/cm2 at an implant energy between about 5 Kev and about 20 Kev. ### Claim 23 (depends on 18) The method of claim 18 wherein step (a) comprises and implanting H+ ions at a dosage between about 1.1×1016 ions/cm2 and about 2×1016 ions/cm2 at an implant energy between about 5 Kev and about 20 Kev. ### Claim 24 (depends on 18) The method of claim 18 wherein step (a) comprises implanting H+ ions at a dosage between about 6.1×1015 ions/cm2 and about 6.8×1015 ions/cm2 at an implant energy between about 5 Kev and about 20 Kev. ### Claim 25 (depends on 18) The method of claim 18 wherein step (b) comprises implanting He+ ions at a dosage between about 6×1015 ions/cm2 and about 8×1015 ions/cm2 at an implant energy between about 5 Kev and about 30 Kev. ### Claim 26 (depends on 18) The method of claim 18 wherein step (b) comprises implanting He+ ions at a dosage between about 6×1015 ions/cm2 and about 8×1015 ions/cm2 at an implant energy between about 10 Kev and about 30 Kev. ### Claim 27 (depends on 18) The method of claim 18 wherein step (b) comprises implanting He+ ions at a dosage between about 6.6×1015 ions/cm2 and about 7×1015 ions/cm2 at an implant energy between about 5 Kev and about 20 Kev. ### Claim 28 (depends on 18) The method of claim 18 wherein a peak density, (D1), of H+ ions is between about 500 Angstroms and about 2500 Angstroms, as measured from the front surface of the single crystal silicon donor substrate and along the central axis. ### Claim 29 (depends on 18) The method of claim 18 wherein a peak density, (D2), of He+ ions is between about 500 Angstroms and about 3000 Angstroms, as measured from the front surface of the single crystal silicon donor substrate and along the central axis. ### Claim 30 (depends on 18) The method of claim 18 wherein the peak density, (D1), of H+ ions and the peak density, (D2), of He+ ions are within about 400 Angstroms of each other. ### Claim 31 (depends on 18) The method of claim 18 wherein the peak density, (D1), of H+ ions and the peak density, (D2), of He+ ions are within about 200 Angstroms of each other. ### Claim 32 (depends on 18) The method of claim 18 wherein step (c) comprises annealing the ion implanted single crystal silicon donor substrate at a temperature between about 250° C. and about 300° C. for a duration between 10 minutes and 60 minutes. ### Claim 33 (depends on 18) The method of claim 18 wherein step (e) comprises annealing the multilayer substrate at a temperature between about 300° C. and about 400° C. for a duration between 10 minutes and 60 minutes. ### Claim 34 (depends on 18) The method of claim 18 wherein the silicon layer having the thickness between about 500 Angstroms and about 2500 Angstroms transferred from the single crystal silicon donor substrate to the handle substrate has a thickness variation less than about 10 Angstroms. ### Claim 35 (depends on 1) The method of claim 1 wherein step (e) comprises annealing the multilayer substrate at a pressure between about 0.5 MPa and about 200 MPa. ### Claim 36 (depends on 18) The method of claim 18 wherein step (e) comprises annealing the multilayer substrate at a pressure between about 0.5 MPa and about 200 MPa.