# US 11,443,976 B2 · Trench isolation process > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,443,976 B2 - Document ID: US11443976B2 - Status: Granted - Kind: B2 - Application number: 16/949,214 - Filed: 2020-10-20 - Published: 2022-04-21 - Granted: 2022-09-13 - Earliest claimed: 2020-10-20 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Company Limited - Inventors: Chung-Lei Chen; Cheng-Hsin Chen; Chung Chieh Ting; Che-Yi Lin; Clark Lee - Web page: https://patentgrep.com/patent/US11443976B2 ## CPC - H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations} - H10P 14/6903: {containing silicon} - H10P 50/287: {by chemical means} - H10P 52/402: {of semiconductor materials} - H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract One or more semiconductor processing tools may form a deep trench within a silicon wafer. The one or more semiconductor processing tools may deposit a first insulating material within the deep trench. The one or more semiconductor processing tools may form, after forming the deep trench with the silicon wafer, a shallow trench above the deep trench. The one or more semiconductor processing tools may deposit a second insulating material within the shallow trench. ## Claims ### Claim 1 A method of providing trench isolation, comprising: forming a deep trench within a silicon wafer; depositing a first insulating material within the deep trench; annealing, after depositing the first insulating material within the deep trench, the silicon wafer; forming, after annealing the silicon wafer, a shallow trench having a lower surface that is above a lower surface of the deep trench; and depositing a second insulating material within the shallow trench, wherein a thickness of a first portion of the second insulating material that is laterally displaced from the deep trench is less than a thickness of a second portion of the second insulating material that is above the first insulating material. ### Claim 2 (depends on 1) The method of claim 1, further comprising: performing a single chemical-mechanical polishing process for both the deep trench and the shallow trench. ### Claim 3 (depends on 1) The method of claim 1, wherein the second insulating material surrounds an active area of the silicon wafer. ### Claim 4 (depends on 1) The method of claim 1, wherein the second insulating material comprises an oxide layer. ### Claim 5 (depends on 1) The method of claim 1, wherein one or more of the first insulating material or the second insulating material comprise polysilicon. ### Claim 6 (depends on 1) The method of claim 1, further comprising: depositing a liner before depositing the first insulating material within the deep trench. ### Claim 7 (depends on 1) The method of claim 1, wherein an upper surface of the second insulating material is non-planar. ### Claim 8 (depends on 1) The method of claim 1, wherein the thickness of the first portion of the second insulating material is less than the thickness of the second portion of the second insulating material by an amount in a range from approximately 0 angstroms to approximately 500 angstroms. ### Claim 9 A method of providing trench isolation, comprising: forming a deep trench having a first depth from an upper surface of a silicon wafer; depositing a first insulating material within the deep trench; annealing, after depositing the first insulating material within the deep trench, the silicon wafer; forming a shallow trench having a second depth from the upper surface of the silicon wafer, wherein the second depth is less than the first depth; depositing a second insulating material within the shallow trench, wherein a thickness of a first portion of the second insulating material that is laterally displaced from the deep trench is less than a thickness of a second portion of the second insulating material that is above the first insulating material; and performing a single chemical-mechanical polishing process for the deep trench and the shallow trench. ### Claim 10 (depends on 9) The method of claim 9, wherein the second insulating material surrounds an active area of the silicon wafer. ### Claim 11 (depends on 9) The method of claim 9, wherein the second insulating material comprises an oxide layer. ### Claim 12 (depends on 9) The method of claim 9, wherein performing the single chemical-mechanical polishing process comprises: removing a portion of the second insulating material. ### Claim 13 A device comprising: an active area; a deep trench that comprises a first insulating material; and a shallow trench, recessed from the active area and having a lower surface that is above a lower surface of the deep trench, comprising: a second insulating material, and an oxide layer on an upper surface of the second insulating material, wherein a thickness of a first portion of the second insulating material that is laterally displaced from the deep trench is less than a thickness of a second portion of the second insulating material that is above the first insulating material. ### Claim 14 (depends on 13) The device of claim 13, wherein the second portion of the second insulating material is recessed from the first portion of the second insulating material by an amount in a range from approximately 500 angstroms to approximately 2,500 angstroms. ### Claim 15 (depends on 13) The device of claim 13, wherein the thickness of the second portion of the second insulating material is an amount in a range from approximately 2,000 angstroms to approximately 4,000 angstroms. ### Claim 16 (depends on 13) The device of claim 13, wherein the shallow trench has a width that is greater than a width of the deep trench, wherein the shallow trench extends laterally from one or more lateral ends of the deep trench. ### Claim 17 (depends on 13) The device of claim 13, wherein the thickness of the first portion of the second insulating material is less than the thickness of the second portion of the second insulating material by an amount in a range from approximately 0 angstroms to approximately 500 angstroms. ### Claim 18 (depends on 13) The device of claim 13, wherein the thickness of the first portion of the second insulating material is an amount in a range from approximately 1,500 angstroms to approximately 4,000 angstroms. ### Claim 19 (depends on 13) The device of claim 13, wherein the active area is at least partially surround by the shallow trench. ### Claim 20 (depends on 13) The device of claim 13, wherein the oxide layer is on an upper surface of the second portion of the second insulating material.