# US 11,443,944 B2 · Method of growing semiconductor layers, method of manufacturing semiconductor device, and method of growing balk crystal

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- Number: US 11,443,944 B2
- Document ID: US11443944B2
- Status: Granted
- Kind: B2
- Application number: 16/859,160
- Filed: 2020-04-27
- Published: 2020-11-19
- Granted: 2022-09-13
- Earliest claimed: 2019-05-15
- Assignees: Denso Corporation; National University Corporation Kyoto Institute of Technology
- Applicants: Tatsuji Nagaoka; Hiroyuki Nishinaka; Masahiro Yoshimoto; Daisuke Tahara
- Inventors: Tatsuji Nagaoka; Hiroyuki Nishinaka; Masahiro Yoshimoto; Daisuke Tahara
- Web page: https://patentgrep.com/patent/US11443944B2

## CPC

- H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/2904: {Silicon carbide}
- H10P 14/2905: {Silicon, silicon germanium or germanium}
- H10P 14/2908: {Nitrides}
- H10P 14/2918: {being semiconductor metal oxides (Group IIB-VIA materials H10P14/2913)}
- H10P 14/2921: {being crystalline insulating materials}
- H10P 14/3216: {Nitrides}
- H10P 14/3234: {being oxide semiconducting materials (Group IIB-VIA semiconductors H10P14/3224)}
- H10P 14/3416: {Nitrides}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method of growing semiconductor layers may include: growing a first semiconductor layer on a surface of a substrate at which a crystal layer is exposed, wherein the first semiconductor layer is different from the crystal layer in at least one of a material and a crystal structure; cutting the first semiconductor layer such that a cut surface of the first semiconductor layer extends from a front surface of the first semiconductor layer to a rear surface of the first semiconductor layer; and growing a second semiconductor layer on the cut surface of the first semiconductor layer, wherein the second semiconductor layer has a material and a crystal structure that are same as those of the first semiconductor layer.

## Claims

### Claim 1

A method of growing semiconductor layers, the method comprising:
growing a first semiconductor layer on a surface of a substrate at which a crystal layer is exposed, wherein the first semiconductor layer is different from the crystal layer in at least one of a material and a crystal structure;
cutting the first semiconductor layer such that a cut surface of the first semiconductor layer extends from a front surface of the first semiconductor layer to a rear surface of the first semiconductor layer; and
growing a second semiconductor layer on the cut surface of the first semiconductor layer, wherein the second semiconductor layer has a material and a crystal structure that are the same as the material and the crystal structure of the first semiconductor layer, respectively;
wherein the crystal layer is constituted of α-aluminum oxide or α-iron oxide, and
wherein the first semiconductor layer and the second semiconductor layer are constituted of α-gallium oxide.

### Claim 2 (depends on 1)

The method of claim 1, further comprising removing the substrate from the first semiconductor layer after the growth of the first semiconductor layer and before the growth of the second semiconductor layer.

### Claim 3 (depends on 1)

The method of claim 1, wherein
the substrate comprises a base layer, and
the crystal layer covers a surface of the base layer.

### Claim 4 (depends on 1)

The method of claim 1, wherein the first semiconductor layer and the second semiconductor layer are constituted of a metastable material.

### Claim 5 (depends on 1)

The method of claim 1, wherein the second semiconductor layer is grown by a hydride vapor phase epitaxy.

### Claim 6 (depends on 1)

The method of claim 1, wherein the second semiconductor layer is grown by a mist chemical vapor deposition (CVD).

### Claim 7 (depends on 1)

The method of claim 1, wherein the second semiconductor layer is doped with dopants.

### Claim 8 (depends on 1)

The method of claim 1, further comprising polishing the cut surface of the first semiconductor layer,
wherein the second semiconductor layer is grown on the cut surface of the first semiconductor layer after the polishing.

### Claim 9 (depends on 1)

The method of claim 1, further comprising:
cutting the second semiconductor layer such that a cut surface of the second semiconductor layer extends from a front surface of the second semiconductor layer to a rear surface of the second semiconductor layer; and
growing a third semiconductor layer on the cut surface of the second semiconductor layer, wherein the third semiconductor layer has a material and a crystal structure that are same as those of the second semiconductor layer.

### Claim 10 (depends on 9)

The method of claim 9, further comprising removing the first semiconductor layer from the second semiconductor layer after the growth of the second semiconductor layer and before the growth of the third semiconductor layer.

### Claim 11 (depends on 1)

A method of manufacturing a semiconductor device, wherein
the method uses the second semiconductor layer formed by the method of claim 1.

### Claim 12 (depends on 9)

A method of manufacturing a semiconductor device, wherein
the method uses the third semiconductor layer formed by the method of claim 9.

### Claim 13 (depends on 1)

A method of growing a balk crystal, wherein
the method uses, as a seed crystal, the second semiconductor layer formed by the method of claim 1.

### Claim 14 (depends on 9)

A method of growing a balk crystal, wherein
the method uses, as a seed crystal, the third semiconductor layer formed by the method of claim 9.