# US 11,443,926 B2 · Substrate processing apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,443,926 B2 - Document ID: US11443926B2 - Status: Granted - Kind: B2 - Application number: 16/936,343 - Filed: 2020-07-22 - Published: 2021-02-04 - Granted: 2022-09-13 - Earliest claimed: 2019-07-30 - Assignees: ASM IP Holding B.V. - Applicants: ASM IP Holding B.V. - Inventors: WonKi Jeong; JuIll Lee; HaSeok Jang - Web page: https://patentgrep.com/patent/US11443926B2 ## CPC - H01J 37/32834: {Exhausting} - C23C 16/4408: {by purging residual gases from the reaction chamber or gas lines} - C23C 16/4412: {Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps} - C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} - H10P 72/0402: {Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence)} - H01J 2237/332: Coating - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A substrate processing apparatus having an improved exhaust structure includes a grounded conductive extension portion configured to prevent generation of parasitic plasma in an exhaust space connected to a reaction space. The substrate processing apparatus prevents generation of parasitic plasma in an area, such as the reaction space, other than the reaction space. Thus, power loss may be prevented and a stable plasma process may be achieved. ## Claims ### Claim 1 A substrate processing apparatus comprising: a substrate support unit configured to support a substrate; a processing unit disposed above the substrate support unit, wherein a reaction space is defined between the substrate support unit and the processing unit; an exhaust unit providing an exhaust space connected to the reaction space; and a conductive extension portion surrounding at least a part of the exhaust space. ### Claim 2 (depends on 1) The substrate processing apparatus of claim 1, wherein the conductive extension portion is configured to prevent generation of parasitic plasma in the exhaust space. ### Claim 3 (depends on 1) The substrate processing apparatus of claim 1, wherein the conductive extension portion is grounded. ### Claim 4 (depends on 1) The substrate processing apparatus of claim 1, wherein the conductive extension portion has a circumference in a shape corresponding to a shape of the substrate. ### Claim 5 (depends on 1) The substrate processing apparatus of claim 1, wherein the exhaust unit comprises a barrier wall disposed between the reaction space and the exhaust space, and a first surface of the barrier wall defines the reaction space, and a second surface of the barrier wall defines the exhaust space. ### Claim 6 (depends on 5) The substrate processing apparatus of claim 5, wherein the conductive extension portion extends along the second surface of the barrier wall. ### Claim 7 (depends on 5) The substrate processing apparatus of claim 5, wherein the conductive extension portion is in contact with the barrier wall. ### Claim 8 (depends on 1) The substrate processing apparatus of claim 1, further comprising: a support portion supporting the processing unit and the exhaust unit, wherein the exhaust unit is disposed between the processing unit and the support portion. ### Claim 9 (depends on 8) The substrate processing apparatus of claim 8, wherein the processing unit functions as a first cover defining an upper surface of the reaction space, and the exhaust unit functions as a second cover defining a side surface of the reaction space. ### Claim 10 (depends on 8) The substrate processing apparatus of claim 8, wherein the exhaust unit comprises: a barrier wall disposed between the reaction space and the exhaust space; an outer wall disposed parallel to the barrier wall and in contact with the support portion; and a connection wall connecting the barrier wall and the outer wall and providing a contact surface with the processing unit, and the conductive extension portion extends along the barrier wall, the connection wall, the outer wall, and the support portion. ### Claim 11 (depends on 10) The substrate processing apparatus of claim 10, wherein the conductive extension portion is electrically connected to the support portion to allow the conductive extension portion and the support portion to have same electric potential. ### Claim 12 (depends on 11) The substrate processing apparatus of claim 11, wherein the support portion comprises a groove, and the conductive ring is accommodated in the groove. ### Claim 13 (depends on 10) The substrate processing apparatus of claim 10, further comprising: a conductive ring in contact with the conductive extension portion. ### Claim 14 (depends on 13) The substrate processing apparatus of claim 13, wherein the conductive ring is implemented by an elastic body having elasticity in a vertical direction so as to increase a contact area between the conductive extension portion and the conductive ring. ### Claim 15 (depends on 1) The substrate processing apparatus of claim 1, further comprising: a conductive ring electrically connected to the conductive extension portion. ### Claim 16 (depends on 15) The substrate processing apparatus of claim 15, wherein the conductive ring comprises an elastic body. ### Claim 17 (depends on 1) The substrate processing apparatus of claim 1, further comprising: an exhaust path connected to the exhaust space, wherein the conductive extension portion comprises an opening providing a connection between the exhaust space and the exhaust path. ### Claim 18 (depends on 17) The substrate processing apparatus of claim 17, wherein the conductive extension portion comprises a first part and a second part with the opening therebetween, and the first part and the second part are separated from each other. ### Claim 19 (depends on 1) The substrate processing apparatus of claim 1, wherein the conductive extension portion extends in the form of an open ring in which at least parts of the conductive extension portion are separated from each other. ### Claim 20 A substrate processing apparatus comprising: a substrate support unit; a first cover disposed on the substrate support unit and comprising at least one processing unit; a second cover disposed under the first cover and comprising a barrier wall; and a conductive extension portion extending from the barrier wall and in contact with the second cover, wherein a reaction space is defined by an outer surface of the barrier wall, an upper surface of the substrate support unit, and a lower surface of the first cover, the second cover comprises an exhaust space connected to the reaction space, and the conductive extension portion is grounded and extends from an inner surface of the barrier wall to surround at least a part of the exhaust space. ### Claim 21 A substrate processing apparatus including a reaction space and an exhaust space connected to the reaction space, the substrate processing apparatus comprising: a grounded conductive extension portion disposed in the exhaust space and configured to prevent generation of parasitic plasma in the exhaust space.