# US 11,443,922 B2 · High frequency power supply member and plasma processing apparatus

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- Number: US 11,443,922 B2
- Document ID: US11443922B2
- Status: Granted
- Kind: B2
- Application number: 17/348,999
- Filed: 2021-06-16
- Published: 2021-12-23
- Granted: 2022-09-13
- Earliest claimed: 2020-06-23
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Michishige Saito; Yousuke Nagahata
- Web page: https://patentgrep.com/patent/US11443922B2

## CPC

- H01J 37/32577: {Electrical connecting means}
- H01J 37/32183: {Matching circuits}
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

A high frequency power supply member for supplying high frequency power includes: an inner conductor that forms a hollow; and an outer conductor arranged to surround the inner conductor, wherein a refrigerant flow path is provided inside a wall surface of at least one of the inner conductor and the outer conductor.

## Claims

### Claim 1

A high frequency power supply member for supplying high frequency power, the high frequency power supply member comprising:
an inner conductor that forms a hollow; and
an outer conductor arranged to surround the inner conductor,
wherein a refrigerant flow path is provided inside a wall surface of at least one of the inner conductor and the outer conductor.

### Claim 2 (depends on 1)

The high frequency power supply member according to claim 1,
wherein the inner conductor supplies the high frequency power to a load, and
wherein the outer conductor is provided to return the high frequency power, returning from the load, to a ground potential area.

### Claim 3 (depends on 1)

The high frequency power supply member according to claim 1, wherein the refrigerant flow path has a helical structure.

### Claim 4 (depends on 3)

The high frequency power supply member according to claim 3, a protrusion is formed inside the refrigerant flow path.

### Claim 5 (depends on 4)

The high frequency power supply member according to claim 4, wherein the protrusion is a grid-shaped, columnar, or fin-shaped member.

### Claim 6 (depends on 1)

The high frequency power supply member according to claim 1, wherein inner conductor and the outer conductor have a coaxial structure.

### Claim 7 (depends on 1)

The high frequency power supply member according to claim 1, wherein inner conductor and the outer conductor have a curved structure.

### Claim 8

A plasma processing apparatus including a high frequency power supply member for supplying high frequency power,
wherein the high frequency power supply member includes:
an inner conductor that forms a hollow; and
an outer conductor arranged to surround the inner conductor,
wherein a refrigerant flow path is provided inside a wall surface of at least one of the inner conductor and the outer conductor.

### Claim 9 (depends on 8)

The plasma processing apparatus according to claim 8,
wherein the inner conductor supplies the high frequency power to a load, and
wherein the outer conductor is provided to return the high frequency power, returning from the load, to a ground potential area.

### Claim 10 (depends on 8)

The plasma processing apparatus according to claim 8, wherein the high frequency power supply member is coupled to a lower electrode and/or an upper electrode.