# US 11,443,900 B2 · Thin film capacitor, and method of producing thin film capacitor

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- Number: US 11,443,900 B2
- Document ID: US11443900B2
- Status: Granted
- Kind: B2
- Application number: 17/166,528
- Filed: 2021-02-03
- Published: 2021-05-27
- Granted: 2022-09-13
- Earliest claimed: 2018-03-23
- Assignees: TDK Corporation
- Applicants: TDK Corporation
- Inventors: Masahiro Hiraoka; Hiroshi Takasaki; Hitoshi Saita
- Web page: https://patentgrep.com/patent/US11443900B2

## CPC

- H01G 4/33: Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)}
- C23C 14/185: {by cathodic sputtering}
- C23C 14/3464: {using more than one target (C23C14/56 takes precedence)}
- C23C 14/3492: {Variation of parameters during sputtering}
- C23C 14/505: {for rotation of the substrates}
- H01G 4/008: Selection of materials
- H10D 1/696: {comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688)}
- H01G 4/1227: {based on alkaline earth titanates}
- H10D 1/682: {having dielectrics comprising perovskite structures}
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A thin film capacitor comprises a first electrode, a second electrode, and a dielectric substance disposed between the first electrode 10 and the second electrode. The second electrode has a first metallic layer, an intermediate layer, and a second metallic layer in sequence in this order from the side of the dielectric substance. The first metallic layer contains a metal element M1 as a main component, and the second metallic layer contains a metal element M2 different from the metal element M1 as a main component. The intermediate layer has one or more laminate structures each having a second metal sublayer containing the metal element M2 as a main component and a first metal sublayer containing the metal element M1 as a main component in sequence from the side of the first metallic layer toward the side of the second metallic layer.

## Claims

### Claim 1

A method of producing a thin film capacitor, comprising:
a step of alternately approaching a dielectric substance to a first target containing a metal element M1 as a main component and a second target containing a metal element M2 as a main component;
a step of having the first target release the metal element M1 therefrom during the step of alternately approaching the dielectric substance thereto to form a first metallic layer on the dielectric substance;
a step of having the second target release the metal element M2 therefrom and having the first target release the metal element M1 therefrom during the step of alternately approaching the dielectric substance thereto to form one or more laminate structures on the first metallic layer, the one or more laminate structures each having a first metal sublayer containing the metal element M1 as a main component and a second metal sublayer containing the metal element M2 as a main component; and
a step of having the second target release the metal element M2 therefrom and not having the first target release the metal element M1 therefrom during the step of alternately approaching the dielectric substance thereto to form a second metallic layer containing the metal element M2 as a main component on the laminate structures.