# US 11,443,808 B2 · Semiconductor memory device and method of operating the semiconductor memory device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,443,808 B2 - Document ID: US11443808B2 - Status: Granted - Kind: B2 - Application number: 17/080,262 - Filed: 2020-10-26 - Published: 2021-11-25 - Granted: 2022-09-13 - Earliest claimed: 2020-05-19 - Assignees: SK hynix Inc. - Applicants: SK hynix Inc. - Inventors: Jong Hoon Lee - Web page: https://patentgrep.com/patent/US11443808B2 ## CPC - G11C 16/10: Programming or data input circuits - G11C 16/08: Address circuits; Decoders; Word-line control circuits - G11C 16/26: Sensing or reading circuits; Data output circuits - G11C 16/30: Power supply circuits - G11C 16/3459: {Circuits or methods to verify correct programming of nonvolatile memory cells} - G11C 16/0483: {comprising cells having several storage transistors connected in series} - G11C 16/32: Timing circuits - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract A semiconductor memory device includes a memory cell array, a peripheral circuit, a current sensing circuit, and control logic. The memory cell array includes a plurality of memory cells. The peripheral circuit performs a program operation on selected memory cells connected to a selected word line among the plurality of memory cells. The current sensing circuit generates a pass signal or a fail signal by performing a current sensing operation on the selected memory cells. The control logic receives the pass signal or the fail signal and controls an operation of the peripheral circuit and the current sensing circuit. The control logic controls the current sensing circuit and the peripheral circuit to perform the current sensing operation and an operation of applying a program pulse to the selected word line based on a program progress state of the selected memory cells. ## Claims ### Claim 1 A semiconductor memory device comprising: a memory cell array including a plurality of memory cells; a peripheral circuit configured to perform a program operation on selected memory cells connected to a selected word line among the plurality of memory cells; a current sensing circuit configured to generate a pass signal or a fail signal by performing a current sensing operation on the selected memory cells; and control logic configured to receive the pass signal or the fail signal and control an operation of the peripheral circuit and the current sensing circuit, wherein the control logic controls the current sensing circuit and the peripheral circuit to perform the current sensing operation and an operation of applying a program pulse to the selected word line based on a program progress state of the selected memory cells, wherein when the program progress state of the selected memory cells corresponds to a first state that includes a first program loop among a plurality of program loops, the control logic controls the current sensing circuit and the peripheral circuit to simultaneously perform the current sensing operation and the operation of applying the program pulse to the selected word line, and wherein when the program progress state of the selected memory cells corresponds to a second state that includes a last program loop among the plurality of program loops, the control logic controls the current sensing circuit and the peripheral circuit to sequentially perform the current sensing operation and the operation of applying the program pulse to the selected word line. ### Claim 2 (depends on 1) The semiconductor memory device of claim 1, wherein the selected memory cells are programmed to any one of a plurality of target program states, and when the current sensing operation to be performed corresponds to any one of remaining target program states except for a last program state among the plurality of target program states, the control logic controls the current sensing circuit and the peripheral circuit to simultaneously perform the current sensing operation and the operation of applying the program pulse to the selected word line. ### Claim 3 (depends on 1) The semiconductor memory device of claim 1, wherein when the number of program pulses applied to the selected word line is less than a predetermined threshold number, the control logic controls the current sensing circuit and the peripheral circuit to simultaneously perform the current sensing operation and the operation of applying the program pulse to the selected word line. ### Claim 4 (depends on 1) The semiconductor memory device of claim 1, wherein the selected memory cells are programmed to any one of a plurality of target program states, and when the current sensing operation to be performed corresponds to a last program state among the plurality of target program states, the control logic controls the current sensing circuit to perform the current sensing operation, and then controls the peripheral circuit to perform the operation of applying the program pulse to the selected word line. ### Claim 5 (depends on 1) The semiconductor memory device of claim 1, wherein when the number of program pulses applied to the selected word line is equal to or greater than a predetermined threshold number, the control logic controls the current sensing circuit to perform the current sensing operation, and then controls the peripheral circuit to perform the operation of applying the program pulse to the selected word line. ### Claim 6 (depends on 1) The semiconductor memory device of claim 1, wherein the peripheral circuit comprises: an address decoder configured to decode the selected word line among a plurality of word lines connected to the memory cell array and transfer a program voltage and a verify voltage to the selected word line; and a read and write circuit connected to the memory cell array through a plurality of bit lines and configured to transfer a program permission voltage or a program inhibit voltage to each of the plurality of bit lines. ### Claim 7 A method of operating a semiconductor memory device for programming selected memory cells, the method comprising: applying a program pulse to a selected word line connected to the selected memory cells; applying a verify voltage to the selected word line; and performing a current sensing operation and an operation of applying a program pulse based on a program progress state for the selected memory cells, wherein when the program progress state of the selected memory cells corresponds to a first state that includes a first program loop among a plurality of program loops, the current sensing operation and the operation of applying the program pulse are simultaneously performed, and wherein when the program progress state of the selected memory cells corresponds to a second state that includes a last program loop among the plurality of program loops, the current sensing operation and the operation of applying the program pulse are sequentially performed. ### Claim 8 (depends on 7) The method of claim 7, wherein when the program progress state of the selected memory cells corresponds to the first state, the selected memory cells are programmed to any one of a plurality of target program states, and performing the current sensing operation and the operation of applying the program pulse comprises: checking a program state of which a verification is passed among the plurality of target program states; and simultaneously performing the current sensing operation and the operation of applying the program pulse to the selected word line when the current sensing operation to be performed corresponds to any one of remaining target program states except for a last program state among the plurality of target program states. ### Claim 9 (depends on 7) The method of claim 7, wherein when the program progress state of the selected memory cells corresponds to the first state, performing the current sensing operation and the operation of applying the program pulse comprises: checking the number of program pulses applied to the selected word line; and simultaneously performing the current sensing operation and the operation of applying the program pulse to the selected word line when the number of the program pulses is less than a predetermined threshold number. ### Claim 10 (depends on 7) The method of claim 7, wherein when the program progress state of the selected memory cells corresponds to the first state, performing the current sensing operation and the operation of applying the program pulse comprises: performing the current sensing operation; applying the program pulse to the selected word line in a period at least partially overlapping a period in which the current sensing operation is performed; and determining whether a verification is failed or passed as a result of the current sensing operation. ### Claim 11 (depends on 7) The method of claim 7, wherein when the program progress state of the selected memory cells corresponds to the second state, the selected memory cells are programmed to any one of a plurality of target program states, and performing the current sensing operation and the operation of applying the program pulse comprises: checking a program state of which a verification is passed among the plurality of target program states; and sequentially performing the current sensing operation and the operation of applying the program pulse to the selected word line when the current sensing operation to be performed corresponds to a last program state among the plurality of target program states. ### Claim 12 (depends on 7) The method of claim 7, wherein when the program progress state of the selected memory cells corresponds to the second state, performing the current sensing operation and the operation of applying the program pulse comprises: checking the number of program pulses applied to the selected word line; and sequentially performing the current sensing operation and the operation of applying the program pulse to the selected word line when the number of program pulses is equal to or greater than a predetermined threshold number. ### Claim 13 (depends on 7) The method of claim 7, wherein when the program progress state of the selected memory cells corresponds to the second state, performing the current sensing operation and the operation of applying the program pulse comprises: performing the current sensing operation; determining whether a verification is failed or passed as a result of the current sensing operation; and applying the program pulse to the selected word line when the verification is failed.