# US 11,443,806 B2 · Nonvolatile memory and method of operating nonvolatile memory

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 11,443,806 B2
- Document ID: US11443806B2
- Status: Granted
- Kind: B2
- Application number: 17/215,614
- Filed: 2021-03-29
- Published: 2022-01-06
- Granted: 2022-09-13
- Earliest claimed: 2020-07-02
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Makoto Hirano
- Web page: https://patentgrep.com/patent/US11443806B2

## CPC

- G11C 13/0026: {Bit-line or column circuits}
- G11C 16/08: Address circuits; Decoders; Word-line control circuits
- G11C 7/02: with means for avoiding parasitic signals
- G11C 7/08: Control thereof
- G11C 7/14: Dummy cell management; Sense reference voltage generators
- G11C 8/08: Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
- G11C 8/10: Decoders
- G11C 13/0028: {Word-line or row circuits}
- G11C 13/004: {Reading or sensing circuits or methods}
- G11C 13/0061: {Timing circuits or methods}
- G11C 16/0425: {comprising cells containing a merged floating gate and select transistor}
- G11C 16/10: Programming or data input circuits
- G11C 16/24: Bit-line control circuits
- G11C 16/26: Sensing or reading circuits; Data output circuits
- G11C 16/32: Timing circuits
- G11C 2013/0045: {Read using current through the cell}
- G11C 2207/002: Isolation gates, i.e. gates coupling bit lines to the sense amplifier
- G11C: STATIC STORES (semiconductor memory devices H10B)

## Abstract

A nonvolatile memory device includes: a memory cell array in which a plurality of memory cells are arranged at intersections between a plurality of word-lines and a plurality of bit-lines; and a word-line select circuit configured to, in response to a first global word-line select signal, start reading a target memory cell connected to a target word-line and provide a reading result of the target memory cell to a sensing line through at least one adjacent word-line that is adjacent to and coupled to the target word-line.

## Claims

### Claim 1

A nonvolatile memory device comprising:
a memory cell array including a plurality of memory cells arranged at intersections between a plurality of substantially parallel word-lines and a plurality of bit-lines; and
a word-line select circuit including a plurality of first transistors each having a first terminal connected to a respective one of the plurality of word-lines, and a plurality of second transistors each having a first terminal connected to the respective one of the plurality of word-lines,
wherein each of the plurality of first transistors has a second terminal connected to a pre-select line, and each of the plurality of second transistors has a second terminal connected to a sensing line,
wherein at least one of the plurality of first transistors having a first terminal connected to a respective word-line of the plurality of word-lines has a control terminal connected to a control terminal of at least one of the plurality of second transistors having a first terminal connected to an adjacent word-line of the plurality of word-lines, respectively.

### Claim 2 (depends on 1)

The nonvolatile memory device of claim 1, wherein:
the control terminal of the at least one of the plurality of first transistors having a first terminal connected to a respective word-line of the plurality of word-lines is connected to a first global word-line select signal line, and
the control terminal of at least one of the plurality of second transistors having a first terminal connected to a respective word-line of the plurality of word-lines is connected to a second global word-line select signal line different from the first global word-line select signal line.

### Claim 3 (depends on 1)

The nonvolatile memory device of claim 1 configured to, in response to a first global word-line select signal, start reading a target memory cell connected to a target word-line and provide a reading result of the target memory cell to a sensing line through at least one adjacent word-line that is adjacent to and coupled to the target word-line.

### Claim 4 (depends on 1)

The nonvolatile memory device of claim 1, wherein the word-line select circuit is configured to start reading the target memory cell by applying a pre-charge voltage to the target word-line in response to the first global word-line select signal.

### Claim 5 (depends on 1)

The nonvolatile memory device of claim 1, wherein a voltage of the at least one adjacent word-line is determined by a parasitic capacitor between the target word-line and the at least one adjacent word-line.

### Claim 6 (depends on 1)

The nonvolatile memory device of claim 1, further comprising a memory sensing circuit, wherein:
the memory cell array comprises a first capacitor connected to the target word-line,
the memory sensing circuit comprises a second capacitor connected to the sensing line, and
a voltage of the sensing line is determined by a capacitance ratio of the first capacitor to the second capacitor.

### Claim 7 (depends on 1)

The nonvolatile memory device of claim 1, wherein the word-line select circuit is further configured to:
start reading a memory cell connected to the at least one adjacent word-line in response to a second global word-line select signal that is different from the first global word-line select signal; and
activate a connection between the target word-line and the sensing line.

### Claim 8 (depends on 1)

The nonvolatile memory device of claim 1, further comprising a word-line decoder configured to determine whether to connect the target word-line and the at least one adjacent word-line to the word-line select circuit, in response to one of a local word-line select signal and a local word-line non-select signal, which are independently applied to the target word-line and the at least one adjacent word-line.

### Claim 9 (depends on 1)

The nonvolatile memory device of claim 1, further comprising a memory sensing circuit configured to determine a program state of the target memory cell, based on a result of a comparison between a voltage of the sensing line and a reference voltage,
wherein the memory sensing circuit is further configured to compensate for an offset of the memory sensing circuit by feeding back the offset of the memory sensing circuit to the at least one adjacent word-line in response to a calibration instruction signal,
wherein the memory sensing circuit is further configured to compare the voltage of the sensing line with a non-select bias voltage in response to the calibration instruction signal; and store a comparison result as the offset in a parasitic capacitor between the target word-line and the at least one adjacent word-line.

### Claim 10

A nonvolatile memory device comprising:
a memory cell array including a plurality of memory cells arranged at intersections between a plurality of word-lines and a plurality of bit-lines; and
a word-line select circuit configured to, in response to a plurality of global word-line select signals that are different from each other, determine whether to start reading a target memory cell connected to a target word-line and whether to apply a voltage of the target word-line to a sensing line.

### Claim 11 (depends on 10)

The nonvolatile memory device of claim 10, wherein the memory cell array comprises:
a first word-line group comprising the target word-line; and
a second word-line group that is different from the first word-line group, and wherein the word-line select circuit comprises:
a first transistor group configured to form a first current path for the first word-line group in response to a first global word-line select signal; and
a second transistor group configured to form a second current path for the second word-line group in response to the first global word-line select signal.

### Claim 12 (depends on 11)

The nonvolatile memory device of claim 11, wherein the word-line select circuit further comprises:
a third transistor group configured to form a third current path for the first word-line group in response to a second global word-line select signal; and
a fourth transistor group configured to form a fourth current path for the second word-line group in response to the second global word-line select signal.

### Claim 13 (depends on 12)

The nonvolatile memory device of claim 12, wherein:
the first current path comprises a current path for giving an instruction to start reading at least one word-line from among the first word-line group,
the second current path comprises a current path for applying a current of at least one word-line from among the second word-line group to the sensing line,
the third current path comprises a current path for applying a current of at least one word-line from among the first word-line group to the sensing line, and
the fourth current path comprises a current path for giving an instruction to start reading at least one word-line from among the second word-line group.

### Claim 14 (depends on 13)

The nonvolatile memory device of claim 13, wherein the word-line select circuit is configured to:
in response to the first global word-line select signal, start reading a target memory cell connected to the target word-line by forming the first current path; and
provide a reading result of the target memory cell to the sensing line by forming the second current path for at least one adjacent word-line from among the second word-line group, the at least one adjacent word-line being adjacent to and coupled to the target word-line.

### Claim 15 (depends on 14)

The nonvolatile memory device of claim 14, further comprising a memory sensing circuit configured to determine a program state of the target memory cell, based on a result of a comparison between a voltage of the sensing line and a reference voltage.

### Claim 16 (depends on 15)

The nonvolatile memory device of claim 15, wherein the memory sensing circuit is further configured to compensate for an offset of the memory sensing circuit by feeding back the offset of the memory sensing circuit to the at least one adjacent word-line in response to a calibration instruction signal.

### Claim 17 (depends on 14)

The nonvolatile memory device of claim 14, further comprising a word-line decoder configured to determine whether to connect each word-line to the word-line select circuit, in response to one of a local word-line select signal and a local word-line non-select signal, which are independently applied to the plurality of word-lines.

### Claim 18 (depends on 17)

The nonvolatile memory device of claim 17, wherein the word-line decoder comprises:
a fifth transistor group connected to each of the plurality of word-lines and configured to determine whether to connect each word-line to the word-line select circuit, in response to one of the local word-line select signal and the local word-line non-select signal; and
a sixth transistor group configured to determine whether to apply a non-select bias voltage to each word-line, in response to one of the local word-line select signal and the local word-line non-select signal.

### Claim 19

A method of operating a nonvolatile memory device to read a target memory cell connected to a target word-line and a target bit-line, the method comprising:
applying a word-line pre-charge voltage to the target word-line, in response to a first global word-line select signal and a first local word-line select signal;
floating the target word-line, in response to a change in a logic state of the first local word-line select signal;
applying a bit-line pre-charge voltage to the target bit-line, in response to a bit-line select signal; and
determining a program state of the target memory cell through at least one adjacent word-line that is adjacent to the target word-line.

### Claim 20 (depends on 19)

The method of claim 19, further comprising providing a reading result of the target memory cell to a sensing line through the at least one adjacent word-line, in response to the first global word-line select signal and a second local word-line select signal.