# US 11,442,833 B2 · Memory sub-system temperature control

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- Number: US 11,442,833 B2
- Document ID: US11442833B2
- Status: Granted
- Kind: B2
- Application number: 17/085,671
- Filed: 2020-10-30
- Published: 2022-05-05
- Granted: 2022-09-13
- Earliest claimed: 2020-10-30
- Assignees: Micron Technology, Inc.
- Applicants: Micron Technology, Inc.
- Inventors: Ting Luo; Tao Liu; Christopher J. Bueb; Eric Yuen; Cheng Cheng Ang
- Web page: https://patentgrep.com/patent/US11442833B2

## CPC

- G06F 11/3058: {Monitoring arrangements for monitoring environmental properties or parameters of the computing system or of the computing system component, e.g. monitoring of power, currents, temperature, humidity, position, vibrations (thermal management in cooling arrangements of a computing system G06F1/206)}
- G06F 11/076: {by exceeding a count or rate limit, e.g. word- or bit count limit}
- G06F 11/0772: {Means for error signaling, e.g. using interrupts, exception flags, dedicated error registers}
- G06F 11/3037: {where the computing system component is a memory, e.g. virtual memory, cache (accessing, addressing or allocating within memory systems or architectures G06F12/00; checking stores for correct operation G11C29/00)}
- G11C 7/04: with means for avoiding disturbances due to temperature effects
- G11C 7/1069: {I/O lines read out arrangements}
- G11C 7/1096: {Write circuits, e.g. I/O line write drivers}
- G11C 11/40626: {Temperature related aspects of refresh operations}
- G11C 16/10: Programming or data input circuits
- G11C 16/32: Timing circuits
- G11C 16/3418: {Disturbance prevention or evaluation; Refreshing of disturbed memory data}
- G06F 2201/81: Threshold
- G11C 7/22: Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- G11C: STATIC STORES (semiconductor memory devices H10B)

## Abstract

A method includes monitoring a temperature of a memory component of a memory sub-system to determine that the temperature of the memory component corresponds to a first monitored temperature value; writing data to the memory component of the memory sub-system while the temperature of the memory component corresponds to the first monitored temperature value; determining that the first monitored temperature value exceeds a threshold temperature range; monitoring the temperature of the memory component of the memory sub-system to determine that the temperature of the memory component corresponds to a second monitored temperature value that is within the threshold temperature range; and rewriting the data to the memory component of the memory sub-system while the temperature of the memory component corresponds to the second monitored temperature value.

## Claims

### Claim 1

A method, comprising:
monitoring a temperature of a memory component of a memory sub-system to determine that the temperature of the memory component corresponds to a first monitored temperature value;
writing data to the memory component of the memory sub-system while the temperature of the memory component corresponds to the first monitored temperature value;
determining that the first monitored temperature value exceeds a threshold temperature range that extends from a lower temperature value to a relatively higher temperature value;
assigning an indication to the data written to the memory component of the memory sub-system at the first monitored temperature as data written above the threshold temperature range when the first monitored temperature is above the threshold temperature range;
monitoring the temperature of the memory component of the memory sub-system to determine that the temperature of the memory component corresponds to a second monitored temperature value that is within the threshold temperature range; and
rewriting the data to the memory component of the memory sub-system while the temperature of the memory component corresponds to the second monitored temperature value, wherein when the first monitored temperature is below the threshold temperature range the data is rewritten to the memory component of the memory sub-system while the temperature of the memory component is at a low temperature subset of the threshold temperature range and when the first monitored temperature is above the threshold temperature range the data is rewritten to the memory component of the memory sub-system while the temperature of the memory component is at a high temperature subset of the threshold temperature range, wherein the low temperature subset includes the lower temperature value and does not include the relatively higher temperature value and the high temperature subset includes the relatively higher temperature value and does not include the lower temperature value, wherein the lower temperature value is about −55° C. and the low temperature subset increasingly extends above the lower temperature value.

### Claim 2 (depends on 1)

The method of claim 1, wherein a portion of the low temperature subset of the threshold temperature range overlaps a portion of a high temperature subset of the threshold temperature range.

### Claim 3 (depends on 1)

The method of claim 1, wherein a portion of the high temperature subset of the threshold temperature range overlaps a portion of a low temperature subset of the threshold temperature range.

### Claim 4 (depends on 1)

The method of claim 1, further comprising reading the rewritten data from the memory component at a third monitored temperature value that is different than the first monitored temperature and the second monitored temperature.

### Claim 5 (depends on 1)

The method of claim 1, wherein the non-volatile memory component is a replacement gate three-dimensional NAND memory component.

### Claim 6

An apparatus, comprising:
a memory sub-system temperature control component configured to:
determine a first monitored temperature of a memory component of the memory sub-system, wherein data is written to the memory component of the memory sub-system at the first monitored temperature;
determine that the first monitored temperature exceeds a threshold temperature range that extends from a lower temperature value to a relatively higher temperature value;
assign an indication to the data written to the memory component of the memory sub-system at the first monitored temperature as data written above the threshold temperature range when the first monitored temperature is above the threshold temperature range;
determine a second monitored temperature of the memory component of the memory sub-system within the threshold temperature range; and
rewrite the data to the memory component of the memory sub-system at the second monitored temperature, wherein when the first monitored temperature is below the threshold temperature range the data is rewritten to the memory component of the memory sub- system while the temperature of the memory component is at a low temperature subset of the threshold temperature range and when the first monitored temperature is above the threshold temperature range the data is rewritten to the memory component of the memory sub-system while the temperature of the memory component is at a high temperature subset of the threshold temperature range, wherein the low temperature subset includes the lower temperature value and does not include the relatively higher temperature value and the high temperature subset includes the relatively higher temperature value and does not include the lower temperature value, wherein the lower temperature value is about −55° C. and the low temperature subset increasingly extends above the lower temperature value.

### Claim 7 (depends on 6)

The apparatus of claim 6, wherein the temperature control component is further configured to assign an indication to the data written to the memory component of the memory sub-system at the first monitored temperature indicating that the data was written below the threshold temperature range.

### Claim 8 (depends on 7)

The apparatus of claim 7, wherein the temperature control component is further configured to assign an indication to the rewritten data to the memory component of the memory sub-system at the second monitored temperature as written within the threshold temperature range.

### Claim 9 (depends on 6)

The apparatus of claim 6, wherein the temperature control component is further configured to assign an indication to the rewritten data to the memory component of the memory sub-system at the second monitored temperature as written within the threshold temperature range.

### Claim 10

A system, comprising:
a plurality of memory components arranged to form a stackable cross-gridded array of memory cells; and
a processing device coupled to the plurality of memory components, the processing device to perform operations comprising:
monitoring a first temperature value of a memory component of a memory sub- system;
writing data to the memory component of the memory sub-system at the first monitored temperature value;
determining the first monitored temperature value exceeds a threshold temperature range that extends from a lower temperature value to a relatively higher temperature value;
assigning an indication to the data written to the memory component of the memory sub-system at the first monitored temperature value as data written above the threshold temperature range when the first monitored temperature is above the threshold temperature range;
monitoring a second temperature value of the memory component of the memory sub-system within the threshold temperature range;
rewriting the data to the memory component of the memory sub-system at the second monitored temperature value, wherein when the first monitored temperature is below the threshold temperature range the data is rewritten to the memory component of the memory sub-system while the temperature of the memory component is at a low temperature subset of the threshold temperature range and when the first monitored temperature is above the threshold temperature range the data is rewritten to the memory component of the memory sub-system while the temperature of the memory component is at a high temperature subset of the threshold temperature range, wherein the low temperature subset includes the lower temperature value and does not include the relatively higher temperature value and the high temperature subset includes the relatively higher temperature value and does not include the lower temperature value, wherein the lower temperature value is about −55° C. and the low temperature subset increasingly extends above the lower temperature value; and
assign an indication to the data rewritten to the memory component of the memory sub-system at the second monitored temperature value as data written within the threshold temperature range.

### Claim 11 (depends on 10)

The system of claim 10, wherein the processing device is to perform operations comprising continuously monitoring the temperature of the memory component of a memory sub-system.

### Claim 12 (depends on 10)

The system of claim 10, wherein portion of the low temperature subset of the threshold temperature range overlaps a portion of a high temperature subset of the threshold temperature range.

### Claim 13 (depends on 10)

The system of claim 10, wherein portion of the high temperature subset of the threshold temperature range overlaps a portion of a low temperature subset of the threshold temperature range.

### Claim 14 (depends on 11)

The system of claim 11, wherein the processing device is to perform operations comprising reading data rewritten to the memory component of the memory sub-system at the second monitored temperature value, wherein reading the rewritten data occurs a third monitored temperature value that is different than the first monitored temperature value and the second monitored temperature value.