# US 11,442,317 B2 · Liquid crystal display device, semiconductor device, and electronic appliance > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,442,317 B2 - Document ID: US11442317B2 - Status: Granted - Kind: B2 - Application number: 17/381,429 - Filed: 2021-07-21 - Published: 2021-11-11 - Granted: 2022-09-13 - Earliest claimed: 2006-04-06 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Hajime Kimura - Web page: https://patentgrep.com/patent/US11442317B2 ## CPC - G02F 1/134309: {characterised by their geometrical arrangement} - G02F 1/133345: {Insulating layers (G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence)} - G02F 1/133514: {Colour filters} - G02F 1/1337: Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers - G02F 1/134363: {for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]} - G02F 1/13439: {characterised by their electrical, optical, physical properties; materials therefor; method of making} - G02F 1/136213: {Storage capacitors associated with the pixel electrode} - G02F 1/136286: {Wiring, e.g. gate line, drain line} - G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)} - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/441: {Interconnections, e.g. scanning lines} - H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors} - H10D 86/60: wherein the TFTs are in active matrices - G02F 1/1362: Active matrix addressed cells {(G02F1/134336, G02F1/134363 take precedence)} - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract The liquid crystal display device includes an island-shaped first semiconductor film 102 which is formed over a base insulating film 101 and in which a source 102d, a channel forming region 102a, and a drain 102b are formed; a first electrode 102c which is formed of a material same as the first semiconductor film 102 to be the source 102d or the drain 102b and formed over the base insulating film 101; a second electrode 108 which is formed over the first electrode 102c and includes a first opening pattern 112; and a liquid crystal 110 which is provided over the second electrode 108. ## Claims ### Claim 1 A display device comprising: a first pixel comprising: a capacitor comprising a first electrode and a second electrode; and a transistor comprising a semiconductor layer connected to the second electrode, wherein the second electrode comprises a region used as a pixel electrode, wherein the first electrode comprises indium, zinc, gallium, and oxygen, wherein the semiconductor layer comprises indium, zinc, gallium, and oxygen, wherein the first electrode and the semiconductor layer are positioned over a first insulating layer, wherein the second electrode is positioned over a second insulating layer comprising an organic material, wherein the second insulating layer is positioned over the first electrode and the semiconductor layer, and wherein the first electrode is connected to a wiring positioned below the first electrode. ### Claim 2 (depends on 1) The display device according to claim 1, further comprising a second pixel adjacent to and connected to the first pixel through the wiring, wherein the wiring extends to the first pixel to the second pixel. ### Claim 3 (depends on 1) The display device according to claim 1, wherein the first insulating layer is a stacked layer comprising a first layer comprising oxygen or nitrogen and a second layer comprising oxygen or nitrogen. ### Claim 4 (depends on 1) The display device according to claim 1, wherein the transistor is a driving transistor. ### Claim 5 A display device comprising: a first pixel comprising: a capacitor comprising a first electrode and a second electrode; and a transistor comprising a semiconductor layer connected to the second electrode, wherein the second electrode comprises a region used as a pixel electrode, wherein the first electrode comprises indium, zinc, gallium, and oxygen, wherein the semiconductor layer comprises indium, zinc, gallium, and oxygen, wherein the first electrode and the semiconductor layer are positioned over a first insulating layer, wherein the second electrode is positioned over a second insulating layer comprising an organic material, wherein the second insulating layer is positioned over the first electrode and the semiconductor layer, and wherein the first electrode is not a floating electrode. ### Claim 6 (depends on 5) The display device according to claim 5, wherein the first insulating layer is a stacked layer comprising a first layer comprising oxygen or nitrogen and a second layer comprising oxygen or nitrogen. ### Claim 7 (depends on 5) The display device according to claim 5, wherein the transistor is a driving transistor. ### Claim 8 A display device comprising: a first pixel comprising: a capacitor comprising a first electrode and a second electrode; and a transistor comprising a semiconductor layer connected to the second electrode, wherein the second electrode comprises a region used as a pixel electrode, wherein the first electrode comprises indium, zinc, gallium, and oxygen, wherein the semiconductor layer comprises indium, zinc, gallium, and oxygen, wherein the first electrode and the semiconductor layer are positioned over a first insulating layer, wherein the second electrode is positioned over a second insulating layer comprising an organic material, wherein the second insulating layer is positioned over the first electrode and the semiconductor layer, and wherein the first electrode is not a pixel electrode. ### Claim 9 (depends on 8) The display device according to claim 8, wherein the first insulating layer is a stacked layer comprising a first layer comprising oxygen or nitrogen and a second layer comprising oxygen or nitrogen. ### Claim 10 (depends on 8) The display device according to claim 8, wherein the transistor is a driving transistor.