# US 11,442,183 B2 · Semiconductor radiation detector > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,442,183 B2 - Document ID: US11442183B2 - Status: Granted - Kind: B2 - Application number: 17/365,421 - Filed: 2021-07-01 - Published: 2021-10-21 - Granted: 2022-09-13 - Earliest claimed: 2019-01-10 - Assignees: Shenzhen Xpectvision Technology Co., Ltd. - Applicants: Shenzhen Xpectvision Technology Co., Ltd. - Inventors: Peiyan Cao; Yurun Liu - Web page: https://patentgrep.com/patent/US11442183B2 ## CPC - G01T 1/24: with semiconductor detectors - G01T 1/241: {Electrode arrangements, e.g. continuous or parallel strips or the like} - A61B 6/032: {Transmission computed tomography [CT]} - A61B 6/4208: {characterised by using a particular type of detector} - G01T: MEASUREMENT OF NUCLEAR OR X-RADIATION (radiation analysis of materials, mass spectrometry G01N23/00; tubes for determining the presence, intensity, density or energy of radiation or particles H01J47/00) - A61B: DIAGNOSIS; SURGERY; IDENTIFICATION (usefulness limited to only animals A61D) ## Abstract Disclosed herein is a radiation detector comprising: an electronics layer comprising a first set of electric contacts and a second set of electric contacts; a radiation absorption layer configured to absorb radiation; a first set of electrodes and a second set of electrodes, wherein the first set of electrodes and the second set of electrodes are interdigitated and extend into the radiation absorption layer in a direction of thickness thereof; wherein the electronics layer and the radiation absorption layer are bonded such that the first set of electrodes are electrically connected to the first set of electric contacts and the second set of electrodes are electrically connected to the second set of electric contacts. ## Claims ### Claim 1 A radiation detector, comprising: an electronics layer comprising a first set of electric contacts and a second set of electric contacts; a radiation absorption layer configured to absorb radiation; a first set of electrodes and a second set of electrodes, wherein the first set of electrodes and the second set of electrodes are interdigitated and extend into the radiation absorption layer in a direction of thickness thereof; wherein the electronics layer and the radiation absorption layer are bonded such that the first set of electrodes are electrically connected to the first set of electric contacts and the second set of electrodes are electrically connected to the second set of electric contacts; wherein the radiation detector further comprises an insulating layer at a surface of the radiation absorption layer distal from the electronics layer; wherein the first set of electrodes and the second set of electrodes are attached to the insulating layer. ### Claim 2 (depends on 1) The radiation detector of claim 1, wherein the radiation absorption layer comprises GaAs, CdTe, CZT, or a combination thereof. ### Claim 3 (depends on 1) The radiation detector of claim 1, wherein the first set of electrodes and the second set of electrodes comprise a metal or a semiconductor. ### Claim 4 (depends on 1) The radiation detector of claim 1, wherein the first set of electrodes and the second set of electrodes are configured to be differentially biased. ### Claim 5 (depends on 1) The radiation detector of claim 1, wherein a distance between one of the first set of electrodes to its nearest neighbor of the second set of electrodes does not exceed 2 L, wherein L is the mean free path of charge carriers in the radiation absorption layer. ### Claim 6 (depends on 1) The radiation detector of claim 1, wherein the second set of electrodes are cylindrical in shape. ### Claim 7 (depends on 1) The radiation detector of claim 1, wherein the second set of electrodes are prismatic in shape. ### Claim 8 (depends on 1) The radiation detector of claim 1, wherein the first set of electrodes comprises a grid. ### Claim 9 (depends on 1) The radiation detector of claim 1, wherein the second set of electrodes are discrete. ### Claim 10 (depends on 1) The radiation detector of claim 1, wherein the first set of electrodes and the second set of electrodes are coextensive in the direction of thickness. ### Claim 11 (depends on 1) The radiation detector of claim 1, wherein the radiation absorption layer comprises a polycrystalline semiconductor. ### Claim 12 (depends on 1) The radiation detector of claim 1, wherein the electronics layer is configured to bias the first set of electrodes and the second set of electrodes to different electric voltages through the first set of electric contacts and the second set of electric contacts. ### Claim 13 (depends on 1) The radiation detector of claim 1, wherein the radiation is X-ray. ### Claim 14 (depends on 1) The radiation detector of claim 1, wherein the electronics layer comprises: a first voltage comparator configured to compare a voltage of an electric contact of the second set of electric contacts to a first threshold; a second voltage comparator configured to compare the voltage to a second threshold; a counter configured to register a number of particles of radiation received by the radiation absorption layer; a controller, wherein the controller is configured to start a time delay from a time at which the first voltage comparator determines that an absolute value of the voltage equals or exceeds an absolute value of the first threshold; wherein the controller is configured to activate the second voltage comparator during the time delay; wherein the controller is configured to cause the number registered by the counter to increase by one, upon determination by the second voltage comparator that an absolute value of the voltage equals or exceeds an absolute value of the second threshold. ### Claim 15 (depends on 14) The radiation detector of claim 14, further comprising an integrator electrically connected to the electric contact, wherein the integrator is configured to collect charge carriers from the electric contact. ### Claim 16 (depends on 14) The radiation detector of claim 14, wherein the controller is configured to activate the second voltage comparator at a beginning or expiration of the time delay. ### Claim 17 (depends on 14) The radiation detector of claim 14, wherein the controller is configured to connect the electric contact to an electrical ground. ### Claim 18 (depends on 14) The radiation detector of claim 14, wherein a rate of change of the voltage is substantially zero at expiration of the time delay. ### Claim 19 A method comprising: obtaining a substrate with an insulating layer and a semiconductor layer attached to the insulating layer; forming a first set of electrodes and a second set of electrodes from the semiconductor layer by etching the semiconductor layer through its entire thickness; introducing semiconductor particles among the first set of electrodes and the second set of electrodes; bonding the semiconductor layer with an electronics layer comprising a first set of electric contacts and a second set of electric contacts, such that the first set of electrodes are electrically connected to the first set of electric contacts and the second set of electrodes are electrically connected to the second set of electric contacts. ### Claim 20 (depends on 19) The method of claim 19, wherein the semiconductor particles comprise GaAs, CdTe, CZT, or a combination thereof. ### Claim 21 (depends on 19) The method of claim 19, wherein introducing the semiconductor particles among the first set of electrodes and the second set of electrodes comprises fusing the semiconductor particles. ### Claim 22 (depends on 19) The method of claim 19, wherein the first set of electrodes and the second set of electrodes are configured to be differentially biased. ### Claim 23 (depends on 19) The method of claim 19, wherein a distance between one of the first set of electrodes to its nearest neighbor of the second set of electrodes does not exceed 2 L, wherein L is the mean free path of charge carriers across the semiconductor particles. ### Claim 24 (depends on 19) The method of claim 19, wherein the second set of electrodes are cylindrical in shape. ### Claim 25 (depends on 19) The method of claim 19, wherein the second set of electrodes are prismatic in shape. ### Claim 26 (depends on 19) The method of claim 19, wherein the first set of electrodes comprises a grid. ### Claim 27 (depends on 19) The method of claim 19, wherein the second set of electrodes are discrete. ### Claim 28 (depends on 19) The method of claim 19, wherein the electronics layer is configured to bias the first set of electrodes and the second set of electrodes to different electric voltages through the first set of electric contacts and the second set of electric contacts. ### Claim 29 (depends on 19) The method of claim 19, further comprising removing the insulating layer. ### Claim 30 A radiation detector, comprising: an electronics layer comprising a first set of electric contacts and a second set of electric contacts; a radiation absorption layer configured to absorb radiation; a first set of electrodes and a second set of electrodes, wherein the first set of electrodes and the second set of electrodes are interdigitated and extend into the radiation absorption layer in a direction of thickness thereof; wherein the electronics layer and the radiation absorption layer are bonded such that the first set of electrodes are electrically connected to the first set of electric contacts and the second set of electrodes are electrically connected to the second set of electric contacts; wherein the second set of electrodes are cylindrical in shape or prismatic in shape. ### Claim 31 (depends on 30) The radiation detector of claim 30, wherein the radiation absorption layer comprises GaAs, CdTe, CZT, or a combination thereof. ### Claim 32 (depends on 30) The radiation detector of claim 30, wherein the first set of electrodes and the second set of electrodes comprise a metal or a semiconductor. ### Claim 33 (depends on 30) The radiation detector of claim 30, wherein the first set of electrodes and the second set of electrodes are configured to be differentially biased. ### Claim 34 (depends on 30) The radiation detector of claim 30, wherein a distance between one of the first set of electrodes to its nearest neighbor of the second set of electrodes does not exceed 2 L, wherein L is the mean free path of charge carriers in the radiation absorption layer. ### Claim 35 (depends on 30) The radiation detector of claim 30, wherein the first set of electrodes comprises a grid. ### Claim 36 (depends on 30) The radiation detector of claim 30, wherein the second set of electrodes are discrete. ### Claim 37 (depends on 30) The radiation detector of claim 30, wherein the first set of electrodes and the second set of electrodes are coextensive in the direction of thickness. ### Claim 38 (depends on 30) The radiation detector of claim 30, wherein the radiation absorption layer comprises a polycrystalline semiconductor. ### Claim 39 (depends on 30) The radiation detector of claim 30, wherein the electronics layer is configured to bias the first set of electrodes and the second set of electrodes to different electric voltages through the first set of electric contacts and the second set of electric contacts. ### Claim 40 (depends on 30) The radiation detector of claim 30, wherein the radiation is X-ray. ### Claim 41 (depends on 30) The radiation detector of claim 30, wherein the electronics layer comprises: a first voltage comparator configured to compare a voltage of an electric contact of the second set of electric contacts to a first threshold; a second voltage comparator configured to compare the voltage to a second threshold; a counter configured to register a number of particles of radiation received by the radiation absorption layer; a controller, wherein the controller is configured to start a time delay from a time at which the first voltage comparator determines that an absolute value of the voltage equals or exceeds an absolute value of the first threshold; wherein the controller is configured to activate the second voltage comparator during the time delay; wherein the controller is configured to cause the number registered by the counter to increase by one, upon determination by the second voltage comparator that an absolute value of the voltage equals or exceeds an absolute value of the second threshold. ### Claim 42 (depends on 41) The radiation detector of claim 41, further comprising an integrator electrically connected to the electric contact, wherein the integrator is configured to collect charge carriers from the electric contact. ### Claim 43 (depends on 41) The radiation detector of claim 41, wherein the controller is configured to activate the second voltage comparator at a beginning or expiration of the time delay. ### Claim 44 (depends on 41) The radiation detector of claim 41, wherein the controller is configured to connect the electric contact to an electrical ground. ### Claim 45 (depends on 41) The radiation detector of claim 41, wherein a rate of change of the voltage is substantially zero at expiration of the time delay.