# US 11,441,484 B2 · Vertical-cavity surface-emitting laser device

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- Number: US 11,441,484 B2
- Document ID: US11441484B2
- Status: Granted
- Kind: B2
- Application number: 16/820,486
- Filed: 2020-03-16
- Published: 2020-09-24
- Granted: 2022-09-13
- Earliest claimed: 2019-03-20
- Assignees: Seoul Viosys Co., Ltd.
- Applicants: Seoul Viosys Co., Ltd.
- Inventors: Seong Joo Park
- Web page: https://patentgrep.com/patent/US11441484B2

## CPC

- F02C 7/224: Heating fuel before feeding to the burner
- H01S 5/18308: {having a special structure for lateral current or light confinement}
- F02C 7/14: of fluids in the plant {, e.g. lubricant or fuel (F02C7/185 takes precedence)}
- F02C 7/232: Fuel valves {(control of fuel supply by means of fuel metering valves F02C9/263)}; Draining valves or systems (valves in general F16K)
- F02C 9/28: Regulating systems responsive to plant or ambient parameters, e.g. temperature, pressure, rotor speed (F02C9/30 - F02C9/38, F02C9/44 take precedence)
- F05D 2260/213: by the provision of a heat exchanger within the cooling circuit
- F05D 2270/3062: of the auxiliary fluid for heating or cooling purposes
- H01S 5/0421: {characterised by the semiconducting contacting layers (electrodes H01S5/0425)}
- H01S 5/04254: {characterised by the shape}
- H01S 5/04257: {having positive and negative electrodes on the same side of the substrate}
- H01S 5/18305: {with emission through the substrate, i.e. bottom emission}
- H01S 5/18344: {characterized by the mesa, e.g. dimensions or shape of the mesa}
- H01S 5/18347: {Mesa comprising active layer}
- H01S 5/18369: {based on dielectric materials}
- H01S 5/209: {special etch stop layers}
- H01S 5/3054: {p-doping}
- H01S 5/3095: {Tunnel junction}
- H01S 5/34313: {with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs}
- H01S 5/34366: {based on InGa(Al)AS}
- H01S 2301/176: Specific passivation layers on surfaces other than the emission facet
- F02C: GAS-TURBINE PLANTS; AIR INTAKES FOR JET-PROPULSION PLANTS; CONTROLLING FUEL SUPPLY IN AIR-BREATHING JET-PROPULSION PLANTS (construction of turbines F01D; jet-propulsion plants F02K; construction of compressors or fans F04; generating combustion products of high pressure or high velocity F23R; using gas turbines in compression refrigeration plants F25B11/00)
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- F05D: INDEXING SCHEME FOR ASPECTS RELATING TO NON-POSITIVE-DISPLACEMENT MACHINES OR ENGINES, GAS-TURBINES OR JET-PROPULSION PLANTS

## Abstract

A vertical-cavity surface-emitting laser device including a lower mirror, an upper mirror disposed over the lower mirror, an active region disposed between the lower mirror and the upper mirror, a lower n-type cladding layer disposed between the active region and the lower mirror, an upper n-type cladding layer disposed between the active region and the upper mirror, a heavily doped p-type semiconductor layer disposed between the active region and the upper n-type cladding layer, and a heavily doped n-type semiconductor layer disposed between the heavily doped p-type semiconductor layer and the upper n-type cladding layer to form a tunnel junction with the heavily doped p-type semiconductor layer.

## Claims

### Claim 1

A vertical-cavity surface-emitting laser device, comprising:
a lower mirror;
an upper mirror disposed over the lower mirror;
an active region disposed between the lower mirror and the upper mirror;
a lower n-type cladding layer disposed between the active region and the lower mirror;
an upper n-type cladding layer disposed between the active region and the upper mirror;
a heavily doped p-type semiconductor layer disposed between the active region and the upper n-type cladding layer;
a heavily doped n-type semiconductor layer disposed between the heavily doped p-type semiconductor layer and the upper n-type cladding layer to form a tunnel junction with the heavily doped p-type semiconductor layer; and
an etch stop layer disposed between the active region and the heavily doped p-type semiconductor layer.

### Claim 2 (depends on 1)

The vertical-cavity surface-emitting laser device of claim 1, wherein the heavily doped p-type semiconductor layer includes p++ InAlAs or p++ InAlGaAs.

### Claim 3 (depends on 2)

The vertical-cavity surface-emitting laser device of claim 2, wherein the heavily doped n-type semiconductor layer includes n++ InP, n++ InAlGaAs, or n++ InAlAs.

### Claim 4 (depends on 3)

The vertical-cavity surface-emitting laser device of claim 3, wherein the heavily doped n-type and p-type semiconductor layers have a doping concentration in a range of 2E19/cm3 to 5E19/cm3, respectively.

### Claim 5 (depends on 1)

The vertical-cavity surface-emitting laser device of claim 1, wherein the etch stop layer includes p-type InP.

### Claim 6 (depends on 1)

The vertical-cavity surface-emitting laser device of claim 1, wherein:
the active region includes barrier layers and a well layer disposed between the barrier layers; and
the barrier layers and the well layer include an InAlGaAs-based semiconductor.

### Claim 7 (depends on 6)

The vertical-cavity surface-emitting laser device of claim 6, further comprising InAlGaAs-based spacer layers in contact with the active region and disposed on both sides of the active region.

### Claim 8 (depends on 1)

The vertical-cavity surface-emitting laser device of claim 1, wherein the lower and upper n-type cladding layers include an n-type contact layer, respectively.

### Claim 9 (depends on 8)

The vertical-cavity surface-emitting laser device of claim 8, further comprising a lower ohmic contact layer and an upper ohmic contact layer connected to the lower n-type cladding layer and the upper n-type cladding layer, respectively.

### Claim 10 (depends on 9)

The vertical-cavity surface-emitting laser device of claim 9, wherein the lower and upper ohmic contact layers include AuGe.

### Claim 11 (depends on 9)

The vertical-cavity surface-emitting laser device of claim 9, further comprising an insulation layer partially disposed between the upper n-type cladding layer and the upper ohmic contact layer, and separating an outer edge of the upper ohmic contact layer from the upper n-type cladding layer.

### Claim 12 (depends on 1)

The vertical-cavity surface-emitting laser device of claim 1, wherein:
the lower mirror includes a distributed Bragg reflector defined by repeatedly stacked InAlAs and InAlGaAs one above another; and
the upper mirror includes a distributed Bragg reflector defined by repeatedly stacked dielectric layers having different refractive indices one above another.

### Claim 13 (depends on 1)

The vertical-cavity surface-emitting laser device of claim 1, further comprising an InP substrate disposed under the lower mirror,
wherein laser beam is configured to be emitted through the substrate.

### Claim 14

A vertical-cavity surface-emitting laser device, comprising:
a lower mirror;
an upper mirror disposed over the lower mirror;
an active region disposed between the lower mirror and the upper mirror;
a lower n-type cladding layer disposed between the active region and the lower mirror;
an upper n-type cladding layer disposed between the active region and the upper mirror;
a heavily doped p-type semiconductor layer disposed between the active region and the upper n-type cladding layer; and
a heavily doped n-type semiconductor layer disposed between the heavily doped p-type semiconductor layer and the upper n-type cladding layer to form a tunnel junction with the heavily doped p-type semiconductor layer,
wherein the lower and upper n-type cladding layers respectively include an n-type contact layer including InP doped with an n-type impurity at a concentration in a range of 5E18/cm3 to 1E19/cm3.

### Claim 15

A vertical-cavity surface-emitting laser device, comprising:
a lower mirror;
an upper mirror disposed over the lower mirror;
an active region disposed between the lower mirror and the upper mirror;
a lower n-type cladding layer disposed between the active region and the lower mirror;
an upper n-type cladding layer disposed between the active region and the upper mirror;
a heavily doped p-type semiconductor layer disposed between the active region and the upper n-type cladding layer;
a heavily doped n-type semiconductor layer disposed between the heavily doped p-type semiconductor layer and the upper n-type cladding layer to form a tunnel junction with the heavily doped p-type semiconductor layer;
a ring-shaped trench exposing the lower n-type cladding layer; and
a mesa surrounded by the trench,
wherein:
the mesa comprises the active region, the heavily doped p-type semiconductor layer, the heavily doped n-type semiconductor layer, and the upper n-type cladding layer; and
the upper mirror is disposed on the upper n-type cladding layer on the mesa.

### Claim 16 (depends on 15)

The vertical-cavity surface-emitting laser device of claim 15, further comprising:
an upper ohmic contact layer having a ring shape disposed around the upper mirror and in ohmic contact with the upper n-type cladding layer; and
a lower ohmic contact layer in ohmic contact with the lower n-type cladding layer exposed through the trench.

### Claim 17 (depends on 16)

The vertical-cavity surface-emitting laser device of claim 16, further comprising a metal reflection layer covering the upper mirror.

### Claim 18 (depends on 17)

The vertical-cavity surface-emitting laser device of claim 17, further comprising first and second electrode pads electrically connected to the lower ohmic contact layer and the metal reflection layer, respectively.

### Claim 19 (depends on 18)

The vertical-cavity surface-emitting laser device of claim 18, further comprising an upper insulation layer covering sidewalls and bottom of the trench, the upper insulation layer having openings exposing the lower ohmic contact layer and the metal reflection layer,
wherein the first and second electrode pads are disposed on the upper insulation layer, and electrically connect to the lower ohmic contact layer and the metal reflection layer through the openings, respectively.