# US 11,441,235 B2 · Crystal growing apparatus and crucible having a main body portion and a low radiation portion > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,441,235 B2 - Document ID: US11441235B2 - Status: Granted - Kind: B2 - Application number: 16/702,749 - Filed: 2019-12-04 - Published: 2020-06-11 - Granted: 2022-09-13 - Earliest claimed: 2018-12-07 - Assignees: Showa Denko K.K. - Applicants: Showa Denko K.K. - Inventors: Rimpei Kindaichi; Yoshishige Okuno; Tomohiro Shonai - Web page: https://patentgrep.com/patent/US11441235B2 ## CPC - C30B 23/066: {Heating of the material to be evaporated} - C23C 14/0635: {Carbides} - C23C 14/243: {Crucibles for source material (C23C14/28, C23C14/30 take precedence)} - C30B 29/36: Carbides - C30B 35/002: {Crucibles or containers} - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract A crystal growing apparatus includes: a crucible including a main body portion and a low radiation portion having a radiation rate lower than that of the main body portion; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, and the low radiation portion is provided on an outer surface of a first point which is a heating center, in a case where the crucible does not include the low radiation portion. ## Claims ### Claim 1 A crystal growing apparatus comprising: a crucible including a main body portion, a low radiation portion having a radiation rate lower than that of the main body portion, a crystal installation portion on which a seed crystal is installed, and a bottom portion which is filled with a raw material; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, wherein the low radiation portion is provided on an outer surface of a first point which is a heating center of the crucible, in a case where the crucible does not include the low radiation portion, the crystal installation portion is disposed on a position facing the raw material, and a height of the low radiation portion is 2 times or more and 4 times or less than a distance of a perpendicular line drawn towards the heating unit from the first point. ### Claim 2 (depends on 1) The crystal growing apparatus according to claim 1, wherein a radiation rate of the low radiation portion is 0.6 times or less than a radiation rate of the main body portion. ### Claim 3 (depends on 1) The crystal growing apparatus according to claim 1, wherein the main body portion is composed of graphite, and the low radiation portion is composed of an element, carbide, or nitride including an element selected from the group consisting of Ta, Mo, Nb, Hf, W, and Zr, or a mixture thereof. ### Claim 4 (depends on 1) The crystal growing apparatus according to claim 1, wherein an outer surface of the main body portion is uneven, and an outer surface of the low radiation portion is a flat surface. ### Claim 5 (depends on 1) The crystal growing apparatus according to claim 1, wherein the height of the low radiation portion is 40% or more and 80% or less of a height of the raw material contained in the crucible. ### Claim 6 (depends on 1) The crystal growing apparatus according to claim 1, further comprising: a support, wherein the support is positioned on a lower portion of the crucible and supports the crucible, and the support rotates in a radial direction. ### Claim 7 (depends on 1) The crystal growing apparatus according to claim 1, further comprising: a heat insulating material, wherein the heat insulating material is a member having a thermal conductivity equal to or smaller than 5 W/mK. ### Claim 8 (depends on 6) The crystal growing apparatus according to claim 6, further comprising: a heat insulating material, wherein the heat insulating material is a member having a thermal conductivity equal to or smaller than 5 W/mK. ### Claim 9 (depends on 8) The crystal growing apparatus according to claim 8, wherein the support passes through the heat insulating material and projects downward from the crucible. ### Claim 10 A crystal growing apparatus comprising: a crucible including a main body portion, a low radiation portion having a radiation rate lower than that of the main body portion, a crystal installation portion on which a seed crystal is installed, and a bottom portion which is filled with a raw material; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, wherein the low radiation portion is provided on an outer surface of a first point which is a heating center of the crucible, in a case where the crucible does not include the low radiation portion, the crystal installation portion is disposed on a position facing the raw material, and a height of the low radiation portion is 40% or more and 80% or less of a height of the raw material contained in the crucible. ### Claim 11 (depends on 10) The crystal growing apparatus according to claim 10, wherein a radiation rate of the low radiation portion is 0.6 times or less than a radiation rate of the main body portion. ### Claim 12 (depends on 10) The crystal growing apparatus according to claim 10, wherein the main body portion is composed of graphite, and the low radiation portion is composed of an element, carbide, or nitride including an element selected from the group consisting of Ta, Mo, Nb, Hf, W, and Zr, or a mixture thereof. ### Claim 13 (depends on 10) The crystal growing apparatus according to claim 10, wherein an outer surface of the main body portion is uneven, and an outer surface of the low radiation portion is a flat surface. ### Claim 14 (depends on 10) The crystal growing apparatus according to claim 10, further comprising: a support, wherein, the support is positioned on a lower portion of the crucible and supports the crucible, and the support rotates in a radial direction. ### Claim 15 (depends on 10) The crystal growing apparatus according to claim 10, further comprising: a heat insulating material, wherein, the heat insulating material is a member having a thermal conductivity equal to or smaller than 5 W/mK. ### Claim 16 (depends on 14) The crystal growing apparatus according to claim 14, further comprising: a heat insulating material, wherein, the heat insulating material is a member having a thermal conductivity equal to or smaller than 5 W/mK. ### Claim 17 (depends on 16) The crystal growing apparatus according to claim 16, wherein the support passes through the heat insulating material and projects downward from the crucible.