# US 11,441,071 B2 · Etchant composition and methods for manufacturing metal pattern and array substrate using the same

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- Number: US 11,441,071 B2
- Document ID: US11441071B2
- Status: Granted
- Kind: B2
- Application number: 16/702,773
- Filed: 2019-12-04
- Published: 2020-06-04
- Granted: 2022-09-13
- Earliest claimed: 2018-12-04
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: Bong-Kyun Kim; JinSeuk Kim; SeungBo Shim; ShinHyuk Choi; Seung-Hee Kim; Donghee Lee
- Web page: https://patentgrep.com/patent/US11441071B2

## CPC

- C09K 13/08: containing a fluorine compound
- C09K 13/00: Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40})
- C09K 13/06: with organic material
- C23F 1/02: Local etching
- C23F 1/10: Etching compositions (C23F1/44 takes precedence)
- C23F 1/16: Acidic compositions (C23F1/42 takes precedence)
- C23F 1/18: for etching copper or alloys thereof
- C23F 1/26: for etching refractory metals
- C23F 1/44: Compositions for etching metallic material from a metallic material substrate of different composition
- G03F 7/2014: {Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame}
- H10D 30/6737: {characterised by the electrode materials}
- H10D 30/6743: {Silicon}
- H10D 86/021: {of multiple TFTs}
- H10P 50/00: Etching of wafers, substrates or parts of devices
- H10P 50/283: {by chemical means}
- H10P 50/642: {Chemical etching}
- H10P 50/667: {by liquid etching only}
- G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)}
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C23F: NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE (working metal by laser beams B23K26/00; desurfacing by applying flames B23K7/00; working of metal by electro-erosion B23H; producing decorative effects by removing surface material, e.g. by engraving, by etching, B44C1/22; electrolytic etching or polishing C25F); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

An etchant composition of an embodiment includes a persulfate, a four-nitrogen ring compound, a two-chlorine compound, a fluorine compound and water, and has a weight ratio of the four-nitrogen ring compound and the two-chlorine compound of about 1:0.5 to about 1:4. The etchant composition may etch a multilayer metal substrate of titanium/copper and may be used for manufacturing a multilayer metal pattern and an array substrate having excellent properties of etched patterns.

## Claims

### Claim 1

An etchant composition, consisting of:
a persulfate;
a four-nitrogen ring compound;
a two-chlorine compound;
a fluorine compound;
a hydrogen sulfate;
a first sulfonic acid compound;
a second sulfonic acid compound;
an antioxidant;
a phosphate;
a copper salt;
an acidity regulator; and
water.

### Claim 2 (depends on 1)

The etchant composition of claim 1,
wherein a weight ratio of the four-nitrogen ring compound and the two-chlorine compound is from about 1:0.5 to about 1:4.

### Claim 3 (depends on 1)

The etchant composition of claim 1,
comprising, based on a total weight of the etchant composition:
from about 0.1 wt % to about 25 wt % of the persulfate;
from about 0.5 wt % to about 1 wt % of the four-nitrogen ring compound;
from about 0.5 wt % to about 2 wt % of the two-chlorine compound;
from about 0.01 wt % to about 3 wt % of the fluorine compound;
from about 0.05 wt % to about 8 wt % of the hydrogen sulfate;
from about 0.1 wt % to about 10 wt % of a sulfonic acid compound including the first sulfonic acid compound and the second sulfonic acid compound;
from about 0.001 wt % to about 3 wt % of the antioxidant;
from about 0.1 wt % to about 0.9 wt % of the acidity regulator;
from about 0.1 wt % to about 5 wt % of the phosphate;
from about 0.01 wt % to about 2 wt % of the copper salt, and
a remaining amount of the water.

### Claim 4 (depends on 3)

The etchant composition of claim 3, wherein the sulfonic acid compound comprises at least one of methane sulfonic acid, benzene sulfonic acid, p-toluene sulfonic acid, ammonium sulfonic acid, amido sulfonic acid, a cyclic sulfonic acid compound, or a hydrocarbon-based sulfonic acid compound.

### Claim 5 (depends on 1)

The etchant composition of claim 1, wherein an acidity of the etchant composition is from about 2.0 to about 6.0.

### Claim 6 (depends on 1)

The etchant composition of claim 1, wherein the persulfate comprises at least one of potassium persulfate (K2S2O8), sodium persulfate (Na2S2O8), or ammonium persulfate ((NH4)2S2O8).

### Claim 7 (depends on 1)

The etchant composition of claim 1, wherein the four nitrogen ring compound comprises at least one of aminotetrazole, aminotetrazole of potassium salt, or methyltetrazole.

### Claim 8 (depends on 1)

The etchant composition of claim 1, wherein the two-chlorine compound comprises at least one of magnesium chloride (MgCl2), calcium chloride (CaCl2), or copper chloride (CuCl2).

### Claim 9 (depends on 1)

The etchant composition of claim 1, wherein the fluorine compound comprises at least one of hydrogen fluoride (HF), ammonium fluoride (NH4F), potassium fluoride (KF), sodium fluoride (NaF), ammonium bifluoride (F2H5N), potassium bifluoride (KHF2), or sodium bifluoride (NaHF2).

### Claim 10 (depends on 1)

The etchant composition of claim 1, wherein the hydrogen sulfate comprises at least one of ammonium hydrogen sulfate (NH4HSO4), lithium hydrogen sulfate (LiHSO4), potassium hydrogen sulfate (KHSO4), or sodium hydrogen sulfate (NaHSO4).

### Claim 11 (depends on 1)

The etchant composition of claim 1, wherein the etchant composition is configured to etch a multilayer comprising a titanium metal layer and a copper metal layer to form a multilayer metal pattern.