# US 11,440,850 B2 · Powder for additive modeling, structure, semiconductor production device component, and semiconductor production device

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- Number: US 11,440,850 B2
- Document ID: US11440850B2
- Status: Granted
- Kind: B2
- Application number: 16/936,761
- Filed: 2020-07-23
- Published: 2020-11-05
- Granted: 2022-09-13
- Earliest claimed: 2017-11-09
- Assignees: Canon Kabushiki Kaisha
- Applicants: Canon Kabushiki Kaisha
- Inventors: Nobuhiro Yasui; Hisato Yabuta; Kanako Oshima
- Web page: https://patentgrep.com/patent/US11440850B2

## CPC

- B28B 1/001: {Rapid manufacturing of 3D objects by additive depositing, agglomerating or laminating of material (selective deposition modelling of metallic powder B22F10/00; rapid manufacturing of 3D objects in general and in particular of plastics B29C64/00)}
- B22F 10/28: Powder bed fusion, e.g. selective laser melting [SLM] or electron beam melting [EBM]
- B33Y 10/00: Processes of additive manufacturing
- B33Y 70/00: Materials specially adapted for additive manufacturing
- B33Y 80/00: Products made by additive manufacturing
- C04B 35/117: Composites
- C04B 35/50: based on rare-earth compounds {(non-oxide rare earth compounds C04B35/5156)}
- C04B 35/581: based on aluminium nitride
- C04B 35/64: Burning or sintering processes (C04B33/32 takes precedence {; powder metallurgy B22F})
- C04B 35/653: Processes involving a melting step
- G03F 1/00: Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- B22F 10/25: Direct deposition of metal particles, e.g. direct metal deposition [DMD] or laser engineered net shaping [LENS]
- B22F 12/41: characterised by the type, e.g. laser or electron beam
- B22F 12/53: Nozzles
- B22F 2302/20: Nitride
- B22F 2302/253: Aluminum oxide (Al2O3)
- C04B 2235/3217: Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
- C04B 2235/3224: Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B 2235/386: Boron nitrides
- C04B 2235/3865: Aluminium nitrides
- C04B 2235/3873: Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
- C04B 2235/5436: micrometer sized, i.e. from 1 to 100 micron
- C04B 2235/6026: Computer aided shaping, e.g. rapid prototyping
- C04B 2235/665: Local sintering, e.g. laser sintering
- C04B 2235/77: Density
- Y02P 10/25: Process efficiency
- B28B: SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER (foundry moulding B22C; working stone or stone-like material B28D; shaping of substances in a plastic state, in general B29C; making layered products not composed wholly of these substances B32B)
- B22F: WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER (making alloys by powder metallurgy C22C); APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B33Y: ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

A material powder for additive modeling including a nitride, and a eutectic oxide, the nitride having an average density lower than an average density of the eutectic oxide, is used to produce a structure using an additive modeling method.

## Claims

### Claim 1

A structure, comprising a nitride region having an average diameter of 5 μm to 100 μm, and an oxide region forming a eutectic structure,
wherein the eutectic structure contains aluminum oxide, and a compound of a rare earth oxide and aluminum oxide.

### Claim 2 (depends on 1)

The structure according to claim 1, wherein the nitride region includes at least one selected from the group consisting of aluminum nitride, silicon nitride, and boron nitride.

### Claim 3 (depends on 1)

The structure according to claim 1, wherein either the nitride region or the oxide region includes an oxynitride.

### Claim 4 (depends on 1)

A semiconductor production device component, comprising the structure according to claim 1, wherein the structure has a hollow part therein.

### Claim 5 (depends on 4)

A semiconductor production device, comprising the semiconductor production device component according to claim 4.

### Claim 6 (depends on 1)

The structure according to claim 1, wherein a density of the nitride region is lower than an average density of the oxide region.

### Claim 7 (depends on 1)

The structure according to claim 1, wherein the oxide region contains aluminum and gadolinium and the nitride region contains at least one selected the group consisting of boron nitride, aluminum nitride, silicon nitride, and titanium nitride.

### Claim 8 (depends on 1)

The structure according to claim 1, wherein the oxide region contains aluminum and yttrium and the nitride region contains at least one selected the group consisting of boron nitride, aluminum nitride, and silicon nitride.

### Claim 9 (depends on 1)

The structure according to claim 1, wherein the oxide region contains aluminum, gadolinium and zirconium and the nitride region contains at least one selected the group consisting of boron nitride, aluminum nitride, and silicon nitride.

### Claim 10 (depends on 1)

The structure according to claim 1, wherein a volume ratio of the oxide region to the structure is 13.0 vol % to 85.7 vol %.

### Claim 11 (depends on 7)

The structure according to claim 7, wherein the oxide region contains a eutectic structure consisting of Al2O3 and GdAlO3.

### Claim 12 (depends on 8)

The structure according to claim 8, wherein the nitride region comprises at least one selected from the group consisting of h-BN, AlN, and Si3N4, and the oxide region comprises a eutectic structure consisting of Al2O3 and YAlO3.