# US 11,440,805 B2 · System and method for producing silicon-containing product by utilizing silicon mud byproduct of cutting silicon material with diamond wire > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,440,805 B2 - Document ID: US11440805B2 - Status: Granted - Kind: B2 - Application number: 16/499,237 - Filed: 2018-03-27 - Published: 2021-04-15 - Granted: 2022-09-13 - Earliest claimed: 2017-03-27 - Applicants: Xi Chu - Inventors: Xi Chu - Web page: https://patentgrep.com/patent/US11440805B2 ## CPC - C01B 33/182: {by reduction of a siliceous material, e.g. with a carbonaceous reducing agent and subsequent oxidation of the silicon monoxide formed} - B01J 8/1836: {Heating and cooling the reactor (B01J8/42 takes precedence)} - C01B 32/97: Preparation from SiO or SiO2 - C01B 33/023: by reduction of silica or {free} silica-containing material - C01B 33/037: Purification (by zone-melting C30B13/00) - C23C 16/442: using fluidised bed process - B01J 2208/0053: Controlling multiple zones along the direction of flow, e.g. pre-heating and after-cooling - Y02E 60/10: Energy storage using batteries - Y02P 20/129: Energy recovery, e.g. by cogeneration, H2recovery or pressure recovery turbines - C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C} - B01J: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION - Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS ## Abstract The present application provides a system and method for producing a silicon-containing product by using a silicon sludge, which is produced by a cutting silicon material with a diamond wire. The method utilizes a high oxide layer on the surface of a silicon waste particle produced during diamond wire cutting. The surface oxide undergoes a disproportionation reaction with adjacent internal elemental silicon to form silicon monoxide, which is removed in a vapor to achieve a physical chemical reaction with a metal, a halogen gas, a hydrogen halide gas or hydrogen to form silicon-containing products of higher added value. The process realizes the large-scale, high-efficiency, energy-saving, continuous and low-cost complete recycling of silicon waste produced by diamond wire cutting of silicon material. ## Claims ### Claim 1 A method of producing silicon monoxide, the method comprising: providing precursor particles having elemental silicon coated with an initial layer of silicon dioxide necessary to produce silicon monoxide; oxidizing the precursor particles to produce a raw material including a thicker coating of silicon dioxide on surfaces of the precursor particles, the thicker coating having a thickness greater than the initial layer; subjecting the raw material to a disproportionation reaction at a reaction temperature of 1200° C. to 1800° C., such that silicon dioxide and elemental silicon in the raw material react to sublimate silicon monoxide into sublimated silicon monoxide vapor; and performing a deposition condensation process and collecting the sublimated silicon monoxide vapor onto an external surface of a collection plate, a rod, or particles in a particle bed to obtain silicon monoxide solid from the sublimated silicon monoxide vapor. ### Claim 2 (depends on 1) The method of claim 1, wherein, after oxidizing the precursor particles, the molar ratio of elemental silicon to silicon dioxide in the raw material is approximately 1:1. ### Claim 3 (depends on 1) The method of claim 1, wherein the silicon monoxide is SiOx, wherein x is between 0.5 and 1.5. ### Claim 4 (depends on 1) The method of claim 1, wherein the silicon monoxide is sublimated, via the disproportionation reaction, at a reaction pressure of 0.01 to 100 Mpa. ### Claim 5 (depends on 1) The method of claim 1, wherein the deposition condensation process of the silicon monoxide solid is carried out in a collection chamber, the collection chamber being a fluidized bed, a dilute phase flow bed, a spray spouted bed, a fixed bed, a moving bed, or a combination thereof. ### Claim 6 (depends on 1) The method of claim 1, wherein, prior to providing precursor particles, the precursor particles are subjected to at least one of air drying, spray drying, fluidized bed drying, rotary flash drying, infrared drying, microwave drying, freeze drying, impact drying, collision drying, superheat drying, pulsation combustion drying, heat pump drying, or a combination thereof. ### Claim 7 (depends on 1) The method of claim 1, wherein the silicon monoxide vapor is collected onto the exterior surface of a collection plate or rod; and wherein the collection plate or rod onto which the sublimated silicon monoxide vapor is condensed is incorporated into a lithium-ion battery as a negative electrode after collection of the sublimated silicon monoxide vapor onto the collection plate or rod. ### Claim 8 (depends on 1) The method of claim 1, wherein the subjecting the raw material to a disproportionation reaction at the reaction temperature occurs in a vacuum. ### Claim 9 (depends on 1) The method of claim 1, wherein the precursor particles comprising elemental silicon coated with silicon dioxide are the byproduct of cutting a silicon wafer with a diamond wire. ### Claim 10 (depends on 4) The method of claim 4, wherein the silicon monoxide is sublimated, via the disproportionation reaction, at a reaction pressure of 0.01 to 0.1 Mpa.