# US 11,440,157 B2 · Dual-surface polishing device and dual-surface polishing method

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- Number: US 11,440,157 B2
- Document ID: US11440157B2
- Status: Granted
- Kind: B2
- Application number: 16/316,460
- Filed: 2017-05-11
- Published: 2019-07-25
- Granted: 2022-09-13
- Earliest claimed: 2016-07-13
- Assignees: Sumco Corporation
- Applicants: Sumco Corporation
- Inventors: Keisuke Esaki
- Web page: https://patentgrep.com/patent/US11440157B2

## CPC

- B24B 37/08: for double side lapping
- B24B 7/17: for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
- B24B 37/005: Control means for lapping machines or devices
- B24B 37/042: {operating processes therefor}
- B24B 37/12: Lapping plates for working plane surfaces
- B24B 37/16: characterised by the shape of the lapping plate surface, e.g. grooved
- B24B 37/26: characterised by the shape of the lapping pad surface, e.g. grooved
- B24B 37/28: for double side lapping of plane surfaces
- H10P 52/00: Grinding, lapping or polishing of wafers, substrates or parts of devices
- B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

An inner-periphery-side cutoff part where a polishing surface of an upper plate inclines upward toward an inner periphery part of the upper plate and an inner-periphery-side cutoff part where a polishing surface of a lower plate inclines downward toward an inner periphery part of the lower plate are respectively formed on the respective inner periphery parts of the upper plate and the lower plate, or an outer-periphery-side cutoff part where the polishing surface of the upper plate inclines upward toward an outer periphery part of the upper plate and an outer-periphery-side cutoff part where the polishing surface of the lower plate inclines downward toward an outer periphery part of the lower plate are respectively formed on the respective outer periphery parts of the upper plate and the lower plate, or all of them are formed thereon.

## Claims

### Claim 1

A dual-surface polishing device comprising:
an upper plate and a lower plate in the shape of a doughnut, each having a center hole in the central part thereof, rotates the plates by a sun gear which is installed in the respective center holes in the upper plate and the lower plate and an internal gear which is installed on respective outer peripheral parts of the upper plate and the lower plate while sandwichingly holding carriers which hold a wafer by the upper plate and the lower plate and thereby simultaneously polishes both surfaces of the wafers,
wherein:
an inner-periphery-side cutoff part X1 where a polishing surface of the upper plate inclines upward toward an inner periphery part of the upper plate and an inner-periphery-side cutoff part Y1 where a polishing surface of the lower plate inclines downward toward an inner periphery part of the lower plate are respectively formed on the respective inner periphery parts of the upper plate and the lower plate, and an outer-periphery-side cutoff part X2 where the polishing surface of the upper plate inclines upward toward the outer periphery part of the upper plate and an outer-periphery-side cutoff part Y2 where the polishing surface of the lower plate inclines downward toward the outer periphery part of the lower plate are respectively formed on the respective outer periphery parts of the upper plate and the lower plate,
the inner-periphery-side cutoff parts X1, Y1 and the outer-periphery-side cutoff parts X2, Y2 are respectively disposed in the form of a ring along the respective inner periphery parts and the respective outer periphery parts of the upper plate or the lower plate,
the dual-surface polishing device is controlled in such a manner that when vertical-direction cutoff amounts of the inner-periphery-side cutoff parts X1, Y1 are designated by A1, B1 (μm) respectively, the A1, B1 (μm) satisfy a range of 10 μm≤A1+B1≤70 μm, and
the dual-surface polishing device is controlled in such a manner that when vertical-direction cutoff amounts of the outer-periphery-side cutoff parts X2, Y2 are designated by A2, B2 (μm) respectively, the A2, B2 (μm) satisfy a range of 10 μm≤A2+B2≤70 μm.

### Claim 2 (depends on 1)

The dual-surface polishing device according to claim 1, wherein:
the dual-surface polishing device is controlled in such a manner that when a diameter of the wafer is designated by R (mm) and horizontal-direction widths of the inner-periphery-side cutoff parts X1, Y1 are designated by C1, D1 (mm) respectively, the C1, D1 (mm) satisfy a range of 0.15×R≤(C1, D1)≤0.25×R, and
the dual-surface polishing device is controlled in such a manner that when horizontal-direction widths of the outer-periphery-side cutoff parts X2, Y2 are designated by C2, D2 (mm) respectively, the C2, D2 (mm) satisfy a range of 0.15×R (mm)≤(C2, D2)≤0.25×R (mm).

### Claim 3 (depends on 1)

The dual-surface polishing device according to claim 1, wherein
respective inclined surfaces of the inner-periphery-side cutoff parts X1, Y1 and the outer-periphery-side cutoff parts X2, Y2 are linear inclined surfaces.

### Claim 4 (depends on 1)

A dual-surface polishing method of simultaneously polishing both surfaces of wafers by using the dual-surface polishing device according to claim 1.