# US 11,440,052 B2 · Two-dimensional array of CMOS control elements

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- Number: US 11,440,052 B2
- Document ID: US11440052B2
- Status: Granted
- Kind: B2
- Application number: 16/395,045
- Filed: 2019-04-25
- Published: 2019-08-15
- Granted: 2022-09-13
- Earliest claimed: 2016-05-04
- Assignees: InvenSense, Inc.
- Applicants: InvenSense, Inc.
- Inventors: James Christian Salvia; Michael H. Perrott; Marian Voros; Eldwin Ng; Julius Ming-Lin Tsai; Nikhil Apte
- Web page: https://patentgrep.com/patent/US11440052B2

## CPC

- B06B 1/0622: {on one surface}
- G06F 3/03547: {Touch pads, in which fingers can move on a surface}
- G06V 40/1306: {non-optical, e.g. ultrasonic or capacitive sensing}
- G06V 40/1359: {Extracting features related to ridge properties; Determining the fingerprint type, e.g. whorl or loop}
- G06V 40/1376: {Matching features related to ridge properties or fingerprint texture}
- G06F 2203/0338: Fingerprint track pad, i.e. fingerprint sensor used as pointing device tracking the fingertip image
- H10D 84/856: {the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS}
- B06B: METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, {e.g.} FOR PERFORMING MECHANICAL WORK IN GENERAL (for particular applications, see the relevant subclasses, e.g. B07B1/40, B23Q17/12, B24B31/06; measurement of mechanical vibrations G01H; in direction finding, locating, distance or velocity measuring G01S; {generating seismic energy G01V1/02}; control of mechanical vibrations in general G05D; sound-producing devices, e.g. bells, sirens, whistles G10K, {e.g. methods or devices for transmitting, conducting, or directing sound in general G10K11/00}; generation of electrical oscillations H03B; electromechanical resonators in general H03H; electromechanical transducers {for communication techniques, e.g. microphones, speakers} H04R)
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- G06V: IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An electronic device includes a plurality of CMOS control elements arranged in a two-dimensional array and a plurality of MEMS devices. Each CMOS control element of the plurality of CMOS control elements includes at least one of a low voltage semiconductor device, a high voltage PMOS semiconductor device, and a high voltage NMOS semiconductor device. Each MEMS device of the plurality of MEMS devices is associated with a CMOS control element of the plurality of CMOS control elements. The plurality of CMOS control elements are arranged in the two-dimensional array such that low voltage semiconductor devices are only adjacent to other low voltage semiconductor devices, high voltage PMOS semiconductor devices are only adjacent to other high voltage PMOS semiconductor devices, and high voltage NMOS semiconductor devices are only adjacent to other high voltage NMOS semiconductor devices.

## Claims

### Claim 1

An electronic device comprising:
a plurality of CMOS control elements arranged in a two-dimensional array, each CMOS control element of the plurality of CMOS control elements comprising at least one of a low voltage semiconductor device, a high voltage PMOS semiconductor device, and a high voltage NMOS semiconductor device; and
a plurality of MEMS devices, each MEMS device of the plurality of MEMS devices associated with a CMOS control element of the plurality of CMOS control elements;
wherein the plurality of CMOS control elements are arranged in the two-dimensional array such that low voltage semiconductor devices are only adjacent to other low voltage semiconductor devices, high voltage PMOS semiconductor devices are only adjacent to other high voltage PMOS semiconductor devices, and high voltage NMOS semiconductor devices are only adjacent to other high voltage NMOS semiconductor devices.

### Claim 2 (depends on 1)

The electronic device of claim 1, wherein the MEMS devices are ultrasonic transducers.

### Claim 3 (depends on 2)

The electronic device of claim 2, wherein the ultrasonic transducers are Piezoelectric Micromachined Ultrasonic Transducer (PMUT) devices.

### Claim 4 (depends on 1)

The electronic device of claim 1 further comprising:
an interconnect layer disposed between the plurality of CMOS control elements and the plurality of MEMS devices, the interconnect layer comprising electrical connections for electrically coupling each MEMS to a low voltage semiconductor device, a high voltage PMOS semiconductor device, and a high voltage NMOS semiconductor device.

### Claim 5 (depends on 4)

The electronic device of claim 4, wherein each MEMS device is electrically coupled to a low voltage semiconductor device through a capacitor.

### Claim 6 (depends on 1)

The electronic device of claim 1, wherein the low voltage semiconductor device comprises at least one of a low voltage NMOS semiconductor device and a low voltage PMOS semiconductor device.

### Claim 7 (depends on 1)

The electronic device of claim 1, wherein each CMOS control element of the plurality of CMOS control elements comprises two semiconductor devices, the plurality of CMOS control elements comprising:
a first subset of CMOS control elements, each CMOS control element of the first subset of CMOS control elements comprising a high voltage NMOS semiconductor device and a low voltage semiconductor device; and
a second subset of CMOS control elements, each CMOS control element of the second subset of CMOS control elements comprising a high voltage PMOS semiconductor device and a low voltage semiconductor device.

### Claim 8 (depends on 7)

The electronic device of claim 7, wherein the low voltage semiconductor device comprises a low voltage NMOS semiconductor device and a low voltage PMOS semiconductor device.

### Claim 9 (depends on 1)

The electronic device of claim 1, wherein each CMOS control element of the plurality of CMOS control elements comprises one semiconductor device, the plurality of CMOS control elements comprising:
a first subset of CMOS control elements, each CMOS control element of the first subset of CMOS control elements comprising a high voltage NMOS semiconductor device;
a second subset of CMOS control elements, each CMOS control element of the second subset of CMOS control elements comprising a high voltage PMOS semiconductor device; and
a third subset of CMOS control elements, each CMOS control element of the third subset of CMOS control elements comprising a low voltage semiconductor device.

### Claim 10 (depends on 9)

The electronic device of claim 9, wherein the low voltage semiconductor device comprises a low voltage NMOS semiconductor device and a low voltage PMOS semiconductor device.

### Claim 11 (depends on 1)

The electronic device of claim 1, wherein each CMOS control element of the plurality of CMOS control elements comprises three semiconductor devices, the plurality of CMOS control elements comprising a low voltage semiconductor device, a high voltage PMOS semiconductor device, and a high voltage NMOS semiconductor device.

### Claim 12 (depends on 11)

The electronic device of claim 11, wherein the low voltage semiconductor device comprises a low voltage NMOS semiconductor device and a low voltage PMOS semiconductor device.

### Claim 13

An electronic device comprising:
a plurality of CMOS control elements arranged in a two-dimensional array, each CMOS control element of the plurality of CMOS control elements comprising at least one of a PMOS semiconductor device and an NMOS semiconductor device; and
a plurality of MEMS devices, each MEMS device of the plurality of MEMS devices associated with a CMOS control element of the plurality of CMOS control elements;
wherein the plurality of CMOS control elements are arranged in the two-dimensional array such that NMOS semiconductor devices are only adjacent to other NMOS semiconductor devices, and PMOS semiconductor devices are only adjacent to other PMOS semiconductor devices.

### Claim 14 (depends on 13)

The electronic device of claim 13, wherein the MEMS devices are ultrasonic transducers.

### Claim 15 (depends on 14)

The electronic device of claim 14, wherein the ultrasonic transducers are Piezoelectric Micromachined Ultrasonic Transducer (PMUT) devices.

### Claim 16 (depends on 13)

The electronic device of claim 13 further comprising:
an interconnect layer disposed between the plurality of CMOS control elements and the plurality of MEMS devices, the interconnect layer comprising electrical connections for electrically coupling each MEMS to at least PMOS semiconductor device and at least one NMOS semiconductor device.

### Claim 17 (depends on 13)

The electronic device of claim 13, wherein the PMOS semiconductor device comprises a low voltage PMOS semiconductor device and a high voltage PMOS semiconductor device and the NMOS semiconductor device comprises a low voltage NMOS semiconductor device and a high voltage NMOS semiconductor device.

### Claim 18 (depends on 17)

The electronic device of claim 17, wherein each MEMS device is electrically coupled to a low voltage NMOS semiconductor device through a first capacitor and electrically coupled to a low voltage PMOS semiconductor device through a second capacitor.

### Claim 19 (depends on 13)

The electronic device of claim 13, wherein each CMOS control element of the plurality of CMOS control elements comprises two semiconductor devices, the plurality of CMOS control elements comprising:
a first subset of CMOS control elements, each CMOS control element of the first subset of CMOS control elements comprising a high voltage NMOS semiconductor device and a low voltage NMOS semiconductor device; and
a second subset of CMOS control elements, each CMOS control element of the second subset of CMOS control elements comprising a high voltage PMOS semiconductor device and a low voltage PMOS semiconductor device.

### Claim 20 (depends on 13)

The electronic device of claim 13, wherein each CMOS control element of the plurality of CMOS control elements comprises semiconductor devices, the plurality of CMOS control elements each comprising:
a PMOS semiconductor device portion comprising a high voltage PMOS semiconductor device and a low voltage PMOS semiconductor device; and
an NMOS semiconductor device portion comprising a high voltage NMOS semiconductor device and a low voltage NMOS semiconductor device.