# US 11,440,002 B2 · Microfluidic chips with one or more vias filled with sacrificial plugs

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 11,440,002 B2
- Document ID: US11440002B2
- Status: Granted
- Kind: B2
- Application number: 16/168,292
- Filed: 2018-10-23
- Published: 2020-04-23
- Granted: 2022-09-13
- Earliest claimed: 2018-10-23
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Joshua T. Smith; Robert Bruce; Jyotica V. Patel; Benjamin Wunsch
- Web page: https://patentgrep.com/patent/US11440002B2

## CPC

- B01L 3/502707: {characterised by the manufacture of the container or its components}
- B81C 1/00087: {Holes}
- B01L 2300/0809: rectangular shaped
- B01L 2300/0874: Three dimensional network
- B01L 2300/0893: having a very large number of wells, microfabricated wells
- B01L 2300/12: Specific details about materials
- B81B 2201/058: Microfluidics not provided for in B81B2201/051 - B81B2201/054
- B81B 2203/0338: Channels
- B81B 2203/0353: Holes
- B01L: CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)

## Abstract

Techniques regarding microfluidic chips with one or more vias filled with sacrificial plugs and/or manufacturing methods thereof are provided herein. For example, one or more embodiments described herein can comprise an apparatus, which can comprise a silicon device layer of a microfluidic chip comprising a plurality of vias extending through the silicon device layer. The plurality of vias comprise greater than or equal to about 100 vias per square centimeter of a surface of the silicon device layer and less than or equal to about 100,000 vias per square centimeter of the surface of the silicon device layer. Additionally, the apparatus can comprise a plurality of sacrificial plugs positioned in the plurality of vias.

## Claims

### Claim 1

An apparatus, comprising:
a silicon device layer of a microfluidic chip comprising a plurality of vias extending through the silicon device layer, wherein the plurality of vias comprise greater than or equal to about 100 vias per square centimeter of a surface of the silicon device layer and less than or equal to about 100,000 vias per square centimeter of the surface of the silicon device layer;
a plurality of sacrificial plugs that respectively fill the plurality of vias, wherein the plurality of sacrificial plugs comprise a sacrificial material and are not integrally connected to each other by the sacrificial material, and wherein the plurality of sacrificial plugs block fluid communication through the plurality of vias; and
a microfluidic element on the surface of the silicon device layer and adjacent to the plurality of vias, wherein the microfluidic element comprises a nanoscale condenser array.

### Claim 2 (depends on 1)

The apparatus of claim 1, wherein the plurality of sacrificial plugs are extractable by a dry debonding process.

### Claim 3 (depends on 1)

The apparatus of claim 1, wherein the sacrificial material comprises a polyimide adhesive.

### Claim 4 (depends on 1)

The apparatus of claim 1, wherein the respective removable sacrificial plugs are removable by an oxygen plasma debonding process.

### Claim 5 (depends on 1)

The apparatus of claim 1, wherein the plurality of vias have respective diameters greater than or equal to 5 μm and less than or equal to 0.5 mm.

### Claim 6 (depends on 1)

The apparatus of claim 1, wherein the sacrificial material comprises a temporary wafer bonding material.

### Claim 7 (depends on 1)

The apparatus of claim 1, wherein the sacrificial material comprises a B-staged bisbenzocyclobutene monomer derived resin.

### Claim 8

An apparatus, comprising:
a silicon device layer of a microfluidic chip comprising a plurality of vias extending through the silicon device layer, wherein the plurality of vias comprise respective removable sacrificial plugs that fill the plurality of vias, wherein the respective removable sacrificial plugs comprise a sacrificial material and are not integrally connected to each other by the sacrificial material, and wherein the respective removable sacrificial plugs block fluid communication through the plurality of vias, wherein the plurality of vias have respective diameters greater than or equal to 5 μm and less than or equal to 0.5 mm; and
a nanoscale condenser array on the surface of the silicon device layer and adjacent to the plurality of vias.

### Claim 9 (depends on 8)

The apparatus of claim 8, wherein the plurality of vias comprise greater than or equal to about 100 vias per square centimeter of a surface of the silicon device layer and less than or equal to about 100,000 vias per square centimeter of the surface of the silicon device layer.

### Claim 10 (depends on 8)

The apparatus of claim 8, wherein the respective removable sacrificial plugs are removable by a dry debonding process.

### Claim 11 (depends on 8)

The apparatus of claim 8, wherein the respective removable sacrificial plugs are removable by an oxygen plasma debonding process.

### Claim 12 (depends on 8)

The apparatus of claim 8, wherein the sacrificial material comprises a polyimide adhesive.

### Claim 13 (depends on 8)

The apparatus of claim 8, wherein the sacrificial material comprises a temporary wafer bonding material.

### Claim 14 (depends on 8)

The apparatus of claim 8, wherein the sacrificial material comprises a B-staged bisbenzocyclobutene monomer derived resin.

### Claim 15

An apparatus, comprising:
a silicon device layer of a microfluidic chip comprising a plurality of vias extending through the silicon device layer, wherein the plurality of vias comprise greater than or equal to about 100 vias per square centimeter of a surface of the silicon device layer and less than or equal to about 100,000 vias per square centimeter of the surface of the silicon device layer;
a plurality of sacrificial plugs that respectively fill the plurality of vias, wherein the plurality of sacrificial plugs comprise a sacrificial material and are not integrally connected to each other by the sacrificial material, and wherein the plurality of sacrificial plugs block fluid communication through the plurality of vias; and
a microfluidic element on the surface of the silicon device layer and adjacent to the plurality of vias, wherein the microfluidic element comprises a deterministic lateral displacement array.

### Claim 16 (depends on 15)

The apparatus of claim 15, wherein the plurality of sacrificial plugs are extractable by a dry debonding process.

### Claim 17 (depends on 15)

The apparatus of claim 15, wherein the sacrificial material comprises a polyimide adhesive.

### Claim 18 (depends on 15)

The apparatus of claim 15, wherein the sacrificial material comprises a temporary wafer bonding material.

### Claim 19 (depends on 15)

The apparatus of claim 15, wherein the sacrificial material comprises a B-staged bisbenzocyclobutene monomer derived resin.

### Claim 20 (depends on 15)

The apparatus of claim 15, wherein the respective removable sacrificial plugs are removable by an oxygen plasma debonding process.